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TS861AIYLT

STMicroelectronics

TS861AIYLT by STMicroelectronics

TS861AIYLT from STMicroelectronics is a high-performance comparator designed for industrial applications. It features a max input offset voltage of 10 mV, operates within -40 °C to 85 °C, and supports supply voltages from 2.7V to 12V. Its compact design ensures efficient space utilization in electronic circuits.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 3,516 parts In-Stock

1+ parts

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3,516

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Anansix

USA . 2,395 parts In-Stock

1+ parts

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2,395

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Digiode

USA . 2,112 parts In-Stock

1+ parts

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2,112

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

IDEA Electronic Components Group

UK . 515 parts In-Stock

1+ parts

$6.757

100+ parts

-

1k+ parts

$6.082

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515

$6.757

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$6.082

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MKK Technologies

India . 553 parts In-Stock

1+ parts

$12.707

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553

$12.707

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DigiPath Technology Company

USA . 553 parts In-Stock

1+ parts

$12.707

100+ parts

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553

$12.707

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Parana Technologies

USA . 759 parts In-Stock

1+ parts

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$8.080

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759

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$8.080

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Corphita

USA . 287 parts In-Stock

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287

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Overview

Elevate your designs with the TS861AIYLT from STMicroelectronics, the trusted leader in semiconductor solutions. This high-performance comparator delivers exceptional accuracy and reliability, perfect for automotive and industrial applications where precision matters. With low power consumption and a compact footprint, it seamlessly integrates into your projects, ensuring outstanding efficiency and durability. Count on STMicroelectronics for quality you can trust!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy provides excellent durability and resistance to environmental stress, making this comparator suitable for various applications.

Maximum Input Offset Voltage: 10000 uV

A low input offset voltage ensures better precision and accuracy in signal processing, making it ideal for sensitive applications.

Maximum Average Bias Current (IIB): 0.0006 uA

Very low bias current minimizes power consumption and enhances battery life in portable applications.

Surface Mount: YES

The surface mount capability allows for compact designs and automated manufacturing processes, leading to reduced assembly costs.

Screening Level: AEC-Q100

Compliance with AEC-Q100 indicates that this product is reliable and suitable for automotive applications.

Package Shape: RECTANGULAR

The rectangular shape allows for efficient space utilization on PCB layouts.

Nominal Supply Voltage / Vsup (V): 5

A nominal voltage of 5V is standard and widely used, ensuring compatibility with numerous electronic devices.

Power Supplies (V): 2.7/10

Versatile power supply range allows for use in a variety of systems, enhancing the product's applicability.

No. of Terminals: 5

The 5-terminal design facilitates easy integration into various circuit configurations.

Package Style (Meter): SMALL OUTLINE, LOW PROFILE, SHRINK PITCH

The small outline and low profile design make it suitable for space-constrained applications.

Maximum Supply Voltage Limit: 12 V

A higher supply voltage limit provides design flexibility for high-voltage applications.

Maximum Operating Temperature: 85 °C

Can operate in high temperatures, ideal for industrial applications where thermal resistance is required.

Maximum Bias Current (IIB) @ 25C: 0.0003 uA

Ultra-low bias current at room temperature enhances performance in low-power applications.

Output Type: PUSH-PULL

Push-pull output stage allows for better signal driving capabilities without external components.

Nominal Response Time: 2000 ns

Fast response time is essential for applications requiring rapid signal processing and feedback.

Minimum Operating Temperature: -40 °C

Wide temperature range ensures reliable operation in extreme conditions.

Terminal Position: DUAL

Dual terminal positioning simplifies routing on circuit boards, allowing for easier design implementation.

Maximum Seated Height: 1.45 mm

Low seated height supports compact PCB designs without compromising performance.

Width: 1.6 mm

Compact width allows for increased PCB density, contributing to the miniaturization of devices.

Length: 2.9 mm

Small length fits easily into tight spaces on circuit boards, enhancing design flexibility.

Temperature Grade: INDUSTRIAL

Industrial temperature grade signifies suitability for demanding environments, ensuring robustness over prolonged use.

Technology: BICMOS

BICMOS technology combines the benefits of both bipolar and CMOS technologies, leading to high performance and low power consumption.

Terminal Form: GULL WING

Gull wing terminal form enhances soldering reliability and makes surface mounting easier.

Amplifier Type: COMPARATOR

As a comparator, it is specifically designed for comparing voltage levels, providing essential functionality in signal processing applications.

Maximum Supply Current: 0.016 mA

Extremely low supply current enhances the power efficiency of portable devices.

Terminal Pitch: 0.95 mm

A 0.95mm terminal pitch allows for efficient use of space and compatibility with modern PCB technologies.

Technical Specifications

Comparators TS861AIYLT attributes and parameters. Explore more Comparators devices from STMicroelectronics

Amplifier Characteristics

Amplifier Type:

Technology:

BICMOS

Power Supply:

2.7/10 V

Total Functions:

1

Sub-Category:

Comparators

Output Type:

Push-Pull

Performance Specifications

Maximum Input Offset Voltage:

10 mV

Peak Bias Current:

600 pA

Maximum Bias Current (IIB) @25 °C:

300 pA

Operational Characteristics

Maximum Supply Current:

16 μA

Nominal Supply Voltage:

5 V

Maximum Supply Voltage:

12 V

Lowest Operating Temperature:

-40 °C (-40 °F)

Maximum Operating Temperature:

85 °C (185 °F)

Nominal Response Time:

2 µs

Physical Characteristics

Length:

0.114 in (2.9 mm)

Width:

0.063 in (1.6 mm)

Maximum Seated Height:

0.057 in (1.45 mm)

Total Terminals:

5

Terminal Pitch:

0.037 in (0.95 mm)

Terminal Position:

Dual

Terminal Form:

Package Body Material:

Plastic/Epoxy

Surface Mount:

Yes

Manufacturing and Reliability

Temperature Grade:

Qualified:

No

Screening Level:

AEC-Q100

Standards

JESD-30 Code:

R-PDSO-G5

Packaging and Shipping

Package Code:

Package Shape:

Package Type:

Small Outline, Low Profile, Shrink Pitch

Package Equivalence Code:

TSOP5/6,.11,37

Trade Compliance

TS861AIYLT Amplifiers trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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