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TS4972EIJT

STMicroelectronics

TS4972EIJT by STMicroelectronics

TS4972EIJT by STMicroelectronics is a compact audio amplifier with a nominal output power of 1.2 W and low harmonic distortion at 1%. It operates within a supply voltage range of 2.5-5.5 V, making it ideal for industrial audio applications. Its thin profile and surface mount design enhance versatility in various electronic devices.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 8,527 parts In-Stock

1+ parts

-

100+ parts

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10k+ parts

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8,527

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Anansix

USA . 2,004 parts In-Stock

1+ parts

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2,004

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Digiode

USA . 191 parts In-Stock

1+ parts

-

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191

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

IDEA Electronic Components Group

UK . 1,892 parts In-Stock

1+ parts

$1.051

100+ parts

-

1k+ parts

$0.946

10k+ parts

-

1,892

$1.051

-

$0.946

-

MKK Technologies

India . 1,813 parts In-Stock

1+ parts

$1.976

100+ parts

-

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-

10k+ parts

-

1,813

$1.976

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DigiPath Technology Company

USA . 1,813 parts In-Stock

1+ parts

$1.976

100+ parts

-

1k+ parts

-

10k+ parts

-

1,813

$1.976

-

-

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Microchip USA

USA . 205 parts In-Stock

1+ parts

$8.236

100+ parts

-

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205

$8.236

-

-

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AZTECH Wire

Italy . 605 parts In-Stock

1+ parts

$8.900

100+ parts

-

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605

$8.900

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Component Stockers USA

USA . 725 parts In-Stock

1+ parts

$99.990

100+ parts

-

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725

$99.990

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QUARKTWIN TECHNOLOGY LTD

USA . 18,622 parts In-Stock

1+ parts

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18,622

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Kepictronics

USA . 8,000 parts In-Stock

1+ parts

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8,000

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A-Z Elektronik GmbH

Germany . 3,000 parts In-Stock

1+ parts

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3,000

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Vigor

Singapore . 2,500 parts In-Stock

1+ parts

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2,500

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Corphita

USA . 715 parts In-Stock

1+ parts

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715

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Metaverse IC Inc.

Canada . 618 parts In-Stock

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618

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Parana Technologies

USA . 551 parts In-Stock

1+ parts

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$1.256

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551

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$1.256

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Overview

Elevate your audio experience with the TS4972EIJT from STMicroelectronics, a leader in semiconductor technology. This high-quality audio amplifier delivers crystal-clear sound while ensuring minimal distortion, making it ideal for portable devices and industrial applications. Its compact design and robust performance under varying temperatures guarantee reliability in any environment, providing unmatched value and versatility for engineers and designers alike.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of PLASTIC/EPOXY in the package body offers durability and resistance to environmental stress, ensuring long-lasting performance.

Surface Mount: YES

Surface mount capability makes the amplifier suitable for compact designs, enabling easy integration into modern electronic devices.

Package Shape: RECTANGULAR

The rectangular package shape allows for efficient space utilization on circuit boards, facilitating a more compact layout.

General IC Type: AUDIO AMPLIFIER

As an audio amplifier, this IC is specifically designed for sound applications, ensuring high-quality audio output.

Harmonic Distortion: 1 %

With only 1% harmonic distortion, this amplifier provides clean sound reproduction, making it ideal for high-fidelity audio applications.

Power Supplies (V): 2.6/5

Operating on a range of 2.6V to 5V makes this amplifier versatile and compatible with various power supply systems.

No. of Terminals: 8

Having 8 terminals facilitates easy connections and integration within different circuit configurations.

Package Style (Meter): GRID ARRAY, VERY THIN PROFILE, FINE PITCH

The thin profile and fine pitch of the grid array package style allow for high-density mounting options on PCBs, suitable for miniaturized designs.

Maximum Operating Temperature: 85 °C

With a maximum operating temperature of 85 °C, this amplifier can perform reliably in demanding environments.

Minimum Operating Temperature: -40 °C

The capability to operate at very low temperatures (-40 °C) makes this amplifier suitable for extreme conditions and various industrial applications.

Terminal Position: BOTTOM

Bottom terminal positioning allows for efficient surface mounting, optimizing board layout and assembly efficiency.

Nominal Output Power: 1.2 W

Offering a nominal output power of 1.2W makes this amplifier capable of driving small speakers effectively for various audio applications.

Maximum Seated Height: 0.7 mm

A maximum seated height of just 0.7 mm helps in maintaining a low profile in devices, essential for compact designs.

Width: 1.6 mm

A narrow width of 1.6 mm allows for efficient space utilization on compact circuit boards.

Minimum Supply Voltage (Vsup): 2.5 V

The minimum supply voltage of 2.5V allows this amplifier to work in low-power applications, enhancing battery life.

Length: 2.26 mm

A compact length of 2.26 mm contributes to the overall miniaturization of electronic devices, meeting modern design requirements.

Temperature Grade: INDUSTRIAL

Designed for industrial temperature ranges, this amplifier can withstand harsh conditions, ideal for critical applications.

Nominal Bandwidth: 0.02 kHz

A nominal bandwidth of 0.02 kHz indicates this amplifier’s capability to handle low-frequency signals, suitable for various audio applications.

Terminal Form: BALL

Ball terminal form ensures reliable solder joints in surface mount applications, contributing to the durability of the design.

Maximum Supply Current: 8 mA

With a maximum supply current of 8 mA, this amplifier is power-efficient, ideal for portable and battery-powered devices.

Terminal Pitch: 0.5 mm

A terminal pitch of 0.5 mm allows for densely packed components on PCBs, optimizing space for additional features.

Maximum Supply Voltage (Vsup): 5.5 V

The maximum supply voltage of 5.5V expands the range of compatible power supplies, enhancing design flexibility.

Technical Specifications

Audio & Video Amplifiers TS4972EIJT attributes and parameters. Explore more Audio & Video Amplifiers devices from STMicroelectronics

Specs

Nominal Bandwidth:

.02 kHz

General IC Type:

Harmonic Distortion:

1 %

JESD-30 Code:

R-PBGA-B8

Length:

2.26 mm

No. of Channels:

1

No. of Functions:

1

No. of Terminals:

8

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Nominal Output Power:

1.2 W

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

FLIP CHIP

Package Shape:

Package Style (Meter):

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

Peak Reflow Temperature (C):

NOT SPECIFIED

Power Supplies (V):

2.6/5

Qualification:

Not Qualified

Maximum Seated Height:

.7 mm

Sub-Category:

Audio/Video Amplifiers

Maximum Supply Current:

8 mA

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

2.5 V

Surface Mount:

YES

Temperature Grade:

Terminal Form:

Terminal Pitch:

.5 mm

Terminal Position:

BOTTOM

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Width:

1.6 mm

Trade Compliance

TS4972EIJT General Purpose ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.33.00.01

SB

8542.33.00.00

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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