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TS3V556IDT

STMicroelectronics

TS3V556IDT by STMicroelectronics

TS3V556IDT by STMicroelectronics is a CMOS analog waveform generator with dual functions, operating b/w -40 °C to 125 °C. It supports a nominal voltage of 3V and achieves output frequencies up to 2 GHz. Ideal for automotive applications, it features a compact SOIC-14 package.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Anansix

USA . 2,516 parts In-Stock

1+ parts

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2,516

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Vyrian

USA . 2,428 parts In-Stock

1+ parts

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2,428

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Digiode

USA . 2,327 parts In-Stock

1+ parts

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2,327

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

IDEA Electronic Components Group

UK . 415 parts In-Stock

1+ parts

$20.412

100+ parts

-

1k+ parts

$18.371

10k+ parts

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415

$20.412

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$18.371

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MKK Technologies

India . 1,589 parts In-Stock

1+ parts

$38.384

100+ parts

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1,589

$38.384

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DigiPath Technology Company

USA . 1,589 parts In-Stock

1+ parts

$38.384

100+ parts

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1,589

$38.384

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Parana Technologies

USA . 1,342 parts In-Stock

1+ parts

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100+ parts

$24.406

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1,342

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$24.406

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Corphita

USA . 167 parts In-Stock

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167

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Overview

Elevate your projects with the TS3V556IDT from STMicroelectronics, a leader in innovation and quality. This versatile analog waveform generator delivers unmatched performance in compact designs, perfect for automotive applications where reliability matters. With its dual functions and robust temperature range, it ensures top-notch efficiency and longevity. Trust STMicroelectronics to empower your designs and bring your ideas to life with cutting-edge technology!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy enhances durability and protection against environmental factors, making it suitable for various applications.

Surface Mount: YES

Surface mount technology allows for compact design and efficient manufacturing processes, making it ideal for space-constrained devices.

No. of Functions: 2

Having multiple functions in a single IC reduces component count, thereby simplifying circuit design and saving board space.

Package Shape: RECTANGULAR

The rectangular package shape offers ease of placement on PCBs and optimized space utilization.

Nominal Supply Voltage (Vsup): 3 V

This nominal voltage provides compatibility with a wide range of low-power applications, promoting energy efficiency.

Maximum Output Frequency: 2 GHz

A high output frequency makes this product suitable for high-performance applications that require fast signal generation.

Power Supplies (V): 2.7/16

This flexible supply voltage range accommodates various system designs, making integration easier.

No. of Terminals: 14

The adequate number of terminals allows for versatile connectivity options in different circuit configurations.

Package Style (Meter): SMALL OUTLINE

The small outline package style is ideal for compact systems needing minimal space while maintaining performance.

Maximum Operating Temperature: 125 °C

A high operating temperature rating provides reliability in demanding environments, particularly important for automotive applications.

Minimum Operating Temperature: -40 °C

This low temperature capability ensures functionality in extreme conditions, enhancing product reliability.

Terminal Finish: NICKEL PALLADIUM GOLD

The premium terminal finish improves solderability and ensures a reliable electrical connection, enhancing overall product performance.

Terminal Position: DUAL

Dual terminal positioning facilitates easier PCB layout and design, contributing to efficient manufacturing.

Maximum Seated Height: 1.75 mm

The low seated height allows for a reduced profile in circuit designs, making it suitable for compact devices.

Width: 3.9 mm

A narrow width helps to save space on the circuit board and supports designs that require densely packed components.

Other IC type: PULSE; RECTANGULAR

Being capable of generating both pulse and rectangular waveforms makes this IC versatile for various applications.

Minimum Supply Voltage (Vsup): 2.7 V

This minimum supply voltage provides adaptability with lower voltage systems, enhancing energy savings.

Length: 8.65 mm

A compact length supports space-sensitive applications and allows for high-density integration on PCBs.

Temperature Grade: AUTOMOTIVE

Designed to meet automotive standards, this product ensures reliability and performance under challenging environmental conditions.

Technology: CMOS

CMOS technology allows for low power consumption while maintaining high performance, making it suitable for battery-operated devices.

Terminal Form: GULL WING

Gull wing terminals facilitate easy soldering and assembly, enhancing manufacturing efficiency.

Terminal Pitch: 1.27 mm

The 1.27 mm pitch provides a balance between compactness and ease of handling during assembly.

Maximum Supply Voltage (Vsup): 16 V

A high maximum supply voltage enables its use in a broad range of applications, including high-voltage systems.

Technical Specifications

Analog Waveform Generation TS3V556IDT attributes and parameters. Explore more Analog Waveform Generation devices from STMicroelectronics

Specs

Additional Features:

IT CAN ALSO OPERATE FROM A 5V NOMINAL SUPPLY

Other IC type:

JESD-30 Code:

R-PDSO-G14

JESD-609 Code:

e4

Length:

8.65 mm

Moisture Sensitivity Level (MSL):

1

No. of Functions:

2

No. of Terminals:

14

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-40 Cel

Maximum Output Frequency:

2 GHz

Package Body Material:

PLASTIC/EPOXY

Package Code:

SOP

Package Equivalence Code:

SOP14,.25

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Power Supplies (V):

2.7/16

Qualification:

Not Qualified

Maximum Seated Height:

1.75 mm

Sub-Category:

Analog Waveform Generation Functions

Maximum Supply Voltage (Vsup):

16 V

Minimum Supply Voltage (Vsup):

2.7 V

Nominal Supply Voltage (Vsup):

3 V

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

NICKEL PALLADIUM GOLD

Terminal Form:

GULL WING

Terminal Pitch:

1.27 mm

Terminal Position:

DUAL

Width (mm):

3.9 mm

Trade Compliance

TS3V556IDT Other Function Semiconductors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

Category top products 20

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