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TS110-8A2-AP

STMicroelectronics

TS110-8A2-AP by STMicroelectronics

TS110-8A2-AP by STMicroelectronics is a single SCR in a cylindrical plastic package, ideal for high-voltage applications. It features a max repetitive peak reverse voltage of 800 V and can handle up to 21 A non-repetitive peak on-state current. Operating b/w -40 °C to 125 °C, it's perfect for robust electronic designs.

Median Price

$0.347

Lifecycle Status

Suppliers In-Stock

7

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 56,000 parts In-Stock

1+ parts

-

100+ parts

$0.347

1k+ parts

$0.288

10k+ parts

$0.257

56,000

-

$0.347

$0.288

$0.257

Verical

USA . 48,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$0.391

10k+ parts

$0.321

48,000

-

-

$0.391

$0.321

Arrow

USA . 4,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$0.200

4,000

-

-

-

$0.200

Chip1Stop

Japan . 3 parts In-Stock

1+ parts

-

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-

1k+ parts

-

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3

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-

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Distributors (In-Stock)

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Digiode

USA . 762 parts In-Stock

1+ parts

$0.248

100+ parts

-

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762

$0.248

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Vyrian

USA . 8,401 parts In-Stock

1+ parts

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8,401

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Anansix

USA . 285 parts In-Stock

1+ parts

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285

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Corphita

USA . 1,609 parts In-Stock

1+ parts

$0.235

100+ parts

-

1k+ parts

-

10k+ parts

-

1,609

$0.235

-

-

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IDEA Electronic Components Group

UK . 1,187 parts In-Stock

1+ parts

$3.414

100+ parts

-

1k+ parts

$3.073

10k+ parts

-

1,187

$3.414

-

$3.073

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MKK Technologies

India . 1,965 parts In-Stock

1+ parts

$6.420

100+ parts

-

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10k+ parts

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1,965

$6.420

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DigiPath Technology Company

USA . 1,965 parts In-Stock

1+ parts

$6.420

100+ parts

-

1k+ parts

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10k+ parts

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1,965

$6.420

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-

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AZTECH Wire

Italy . 156 parts In-Stock

1+ parts

$17.130

100+ parts

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156

$17.130

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Parana Technologies

USA . 260 parts In-Stock

1+ parts

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100+ parts

$4.082

1k+ parts

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10k+ parts

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260

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$4.082

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Overview

Elevate your designs with the TS110-8A2-AP from STMicroelectronics, a leader in innovation and quality. This Silicon Controlled Rectifier (SCR) offers superior reliability and performance for a variety of applications, from power control to lighting systems. With its robust design and exceptional durability, you gain peace of mind knowing that it can withstand extreme conditions. Trust STMicroelectronics to deliver value and efficiency, empowering your projects for success.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This lightweight and durable package body material enhances the SCR's reliability and makes it suitable for various environments.

Maximum DC Gate Trigger Current: 0.1 mA

A low gate trigger current allows for efficient operation and helps minimize power consumption during triggering.

Configuration: SINGLE

The single configuration simplifies circuit design and integration, making it easier to use in various applications.

Non Repetitive Peak On-state Current: 21 A

This high non-repetitive peak on-state current rating ensures the SCR can handle substantial current spikes, increasing durability in demanding applications.

Package Shape: ROUND

The round package shape is ideal for effective thermal dissipation, which contributes to improved performance and reliability.

Terminal Form: THROUGH-HOLE

Through-hole terminals provide strong mechanical connections and ease of mounting in various circuit board layouts.

Maximum On-state Current: 0.8 A

A maximum on-state current of 0.8 A allows this SCR to be used effectively in low to moderate power applications.

Repetitive Peak Reverse Voltage: 800 V

A high repetitive peak reverse voltage signifies robustness against voltage spikes, making it suitable for high-voltage applications.

Maximum Repetitive Peak Off-state Leakage Current: 100 µA

A low leakage current ensures energy efficiency and reduced power loss in the circuit, enhancing overall system performance.

No. of Terminals: 3

The 3-terminal design allows for flexible circuit configurations and compatibility with various control methods.

Package Style (Meter): CYLINDRICAL

The cylindrical package style is well-suited for applications where space is constrained and provides an aesthetically pleasing design element.

Maximum Operating Temperature: 125 °C

A high maximum operating temperature allows for reliable performance in demanding thermal conditions, extending the SCR's lifespan.

Trigger Device Type: SCR

SCR technology is renowned for its ability to efficiently control high-power applications, making this product a strong choice for industrial use.

Minimum Operating Temperature: -40 °C

Operating down to -40 °C provides versatility for use in harsh environmental conditions, ensuring reliable performance.

Terminal Position: BOTTOM

Bottom terminal positioning makes it ideal for compact circuit designs and ensures easy integration into existing systems.

Maximum RMS On-state Current: 1.25 A

With a maximum RMS on-state current of 1.25 A, this SCR is effective for a wide range of load conditions, providing flexibility for various applications.

Maximum DC Gate Trigger Voltage: 0.8 V

A low gate trigger voltage enhances the compatibility with low-voltage control systems, optimizing the efficiency of circuit designs.

Repetitive Peak Off-state Voltage: 800 V

This high off-state voltage rating reflects the SCR's capacity to handle high voltage loads, ensuring safety and reliability in operation.

Maximum Holding Current: 12 mA

A low maximum holding current allows for reduced power waste while maintaining effective operation in the application.

Reference Standard: IEC-61000-4-5

Meets the IEC-61000-4-5 standard, ensuring compliance with international safety and quality regulations, making it suitable for global applications.

Technical Specifications

Silicon Controlled Rectifiers (SCR) TS110-8A2-AP attributes and parameters. Explore more Silicon Controlled Rectifiers (SCR) devices from STMicroelectronics

Specs

Configuration:

Maximum DC Gate Trigger Current:

.1 mA

Maximum DC Gate Trigger Voltage:

.8 V

Maximum Holding Current:

12 mA

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T3

Non Repetitive Peak On-state Current:

21 A

No. of Elements:

1

No. of Terminals:

3

Maximum On-state Current:

.8 A

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

Peak Reflow Temperature (C):

NOT SPECIFIED

Maximum RMS On-state Current:

1.25 A

Reference Standard:

IEC-61000-4-5

Maximum Repetitive Peak Off-state Leakage Current:

100 uA

Repetitive Peak Off-state Voltage:

800 V

Repetitive Peak Reverse Voltage:

800 V

Surface Mount:

NO

Terminal Form:

THROUGH-HOLE

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Trigger Device Type:

SCR

Trade Compliance

TS110-8A2-AP Triggering Devices trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.30.00.80

SB

8541.30.00.80

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

Category top products 20

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