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TS110-7UF

STMicroelectronics

TS110-7UF by STMicroelectronics

The STMicroelectronics TS110-7UF is a Silicon Controlled Rectifier with max DC Gate Trigger Current of 0.001 mA, Non Repetitive Peak On-state Current of 25 A, and Repetitive Peak Off-state Voltage of 700 V. Ideal for applications requiring precise current control in environments ranging from -40 to 125 °C.

Median Price

$1.550

Lifecycle Status

Suppliers In-Stock

6

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Mouser Electronics

USA . 490 parts In-Stock

1+ parts

$1.540

100+ parts

$0.644

1k+ parts

$0.423

10k+ parts

$0.371

490

$1.540

$0.644

$0.423

$0.371

DigiKey

USA . 3,175 parts In-Stock

1+ parts

$1.560

100+ parts

$0.656

1k+ parts

$0.470

10k+ parts

$0.432

3,175

$1.560

$0.656

$0.470

$0.432

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 647 parts In-Stock

1+ parts

$0.931

100+ parts

-

1k+ parts

-

10k+ parts

-

647

$0.931

-

-

-

Vyrian

USA . 669 parts In-Stock

1+ parts

$0.980

100+ parts

-

1k+ parts

-

10k+ parts

-

669

$0.980

-

-

-

IBS Electronics

USA . 25,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$0.267

25,000

-

-

-

$0.267

Anansix

USA . 764 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

764

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Corphita

USA . 1,044 parts In-Stock

1+ parts

$0.882

100+ parts

-

1k+ parts

-

10k+ parts

-

1,044

$0.882

-

-

-

IDEA Electronic Components Group

UK . 1,689 parts In-Stock

1+ parts

$3.346

100+ parts

-

1k+ parts

$3.011

10k+ parts

-

1,689

$3.346

-

$3.011

-

Advanced Electronics

New Zealand . 270 parts In-Stock

1+ parts

$5.108

100+ parts

$4.648

1k+ parts

$4.189

10k+ parts

-

270

$5.108

$4.648

$4.189

-

MKK Technologies

India . 1,587 parts In-Stock

1+ parts

$6.292

100+ parts

-

1k+ parts

-

10k+ parts

-

1,587

$6.292

-

-

-

DigiPath Technology Company

USA . 1,587 parts In-Stock

1+ parts

$6.292

100+ parts

-

1k+ parts

-

10k+ parts

-

1,587

$6.292

-

-

-

Parana Technologies

USA . 1,950 parts In-Stock

1+ parts

-

100+ parts

$4.001

1k+ parts

-

10k+ parts

-

1,950

-

$4.001

-

-

Microchip USA

USA . 165 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

165

-

-

-

-

Overview

Unleash the power of precision and reliability with the TS110-7UF by STMicroelectronics. Crafted by a trusted manufacturer, this Silicon Controlled Rectifier (SCR) offers unparalleled performance in a wide range of applications. From industrial machinery to consumer electronics, this SCR delivers seamless operation and efficiency. Experience peace of mind knowing that your devices are powered by a product that exceeds expectations. Elevate your projects with the TS110-7UF and unlock a world of possibilities.

Feature Benefit Bullets

Maximum DC Gate Trigger Current: 0.001 mA

This low gate trigger current allows for precise control over the SCR, making it suitable for applications where accuracy is crucial.

Non Repetitive Peak On-state Current: 25 A

The high on-state current rating ensures that the SCR can handle heavy loads without any issues, making it suitable for high-power applications.

Surface Mount: YES

Being surface mountable makes installation of this SCR convenient and suitable for compact designs where space is limited.

Maximum On-state Current: 0.8 A

The low on-state current allows for efficient power management and helps in reducing energy consumption.

Maximum Leakage Current: 0.1 mA

The low leakage current ensures minimal power loss and contributes to the overall efficiency of the system.

Maximum Operating Temperature: 125 °C

With a high operating temperature range, this SCR can withstand harsh environmental conditions without compromising its performance.

Trigger Device Type: SCR

As a Silicon Controlled Rectifier, this device offers reliable and stable switching capabilities, making it ideal for various control applications.

Moisture Sensitivity Level (MSL): 3

The MSL 3 rating indicates that this SCR has a moderate sensitivity to moisture, allowing it to be used in a wide range of environments.

Repetitive Peak Off-state Voltage: 700 V

The high off-state voltage rating ensures that the SCR can handle high voltage applications, making it suitable for industrial and commercial use.

Minimum Critical Rate of Rise of Off-state Voltage: 15 V/us

With a fast rate of rise of off-state voltage, this SCR provides quick response times and efficient operation in dynamic systems.

Maximum Holding Current: 2 mA

The low holding current ensures stable operation and helps in reducing power consumption during the holding state of the SCR.

Peak Reflow Temperature °C: 225

The high peak reflow temperature rating indicates that this SCR can withstand high-temperature soldering processes, ensuring reliable connections during assembly.

Technical Specifications

Silicon Controlled Rectifiers (SCR) TS110-7UF attributes and parameters. Explore more Silicon Controlled Rectifiers (SCR) devices from STMicroelectronics

Specs

Minimum Critical Rate of Rise of Off-state Voltage:

15 V/us

Maximum DC Gate Trigger Current:

.001 mA

Maximum DC Gate Trigger Voltage:

.8 V

Maximum Holding Current:

2 mA

JESD-609 Code:

e3

Maximum Leakage Current:

.1 mA

Moisture Sensitivity Level (MSL):

3

Non Repetitive Peak On-state Current:

25 A

Maximum On-state Current:

.8 A

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-40 Cel

Peak Reflow Temperature (C):

225

Repetitive Peak Off-state Voltage:

700 V

Sub-Category:

Silicon Controlled Rectifiers

Surface Mount:

YES

Terminal Finish:

Matte Tin (Sn) - annealed

Maximum Time At Peak Reflow Temperature (s):

30

Trigger Device Type:

SCR

Trade Compliance

TS110-7UF Triggering Devices trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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