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TS110-7A1-AP

STMicroelectronics

TS110-7A1-AP by STMicroelectronics

STMicroelectronics' TS110-7A1-AP is a Silicon Controlled Rectifier with 25A Non Repetitive Peak On-state Current, 0.8A Max On-state Current, and 700V Repetitive Peak Off-state Voltage. Ideal for applications requiring precise current control in high temperature environments up to 125 °C.

Median Price

$1.080

Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

DigiKey

USA . 3,635 parts In-Stock

1+ parts

$1.080

100+ parts

$0.442

1k+ parts

$0.309

10k+ parts

$0.282

3,635

$1.080

$0.442

$0.309

$0.282

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 194 parts In-Stock

1+ parts

$1.007

100+ parts

-

1k+ parts

-

10k+ parts

-

194

$1.007

-

-

-

Vyrian

USA . 4,960 parts In-Stock

1+ parts

$1.060

100+ parts

-

1k+ parts

-

10k+ parts

-

4,960

$1.060

-

-

-

Anansix

USA . 2,685 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

2,685

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Corphita

USA . 3,305 parts In-Stock

1+ parts

$0.954

100+ parts

-

1k+ parts

-

10k+ parts

-

3,305

$0.954

-

-

-

IDEA Electronic Components Group

UK . 2,089 parts In-Stock

1+ parts

$2.376

100+ parts

-

1k+ parts

$2.139

10k+ parts

-

2,089

$2.376

-

$2.139

-

MKK Technologies

India . 1,407 parts In-Stock

1+ parts

$4.469

100+ parts

-

1k+ parts

-

10k+ parts

-

1,407

$4.469

-

-

-

DigiPath Technology Company

USA . 1,407 parts In-Stock

1+ parts

$4.469

100+ parts

-

1k+ parts

-

10k+ parts

-

1,407

$4.469

-

-

-

Parana Technologies

USA . 2,277 parts In-Stock

1+ parts

-

100+ parts

$2.841

1k+ parts

-

10k+ parts

-

2,277

-

$2.841

-

-

Overview

Unleash the power of the TS110-7A1-AP Silicon Controlled Rectifier by STMicroelectronics, a top-tier manufacturer known for its superior quality and reliability. Ideal for a variety of applications, this SCR offers unmatched performance and efficiency. With a maximum DC gate trigger current of 0.001 mA and a non-repetitive peak on-state current of 25 A, this product ensures seamless operation even in extreme conditions. Experience the benefits of precise control and optimal power management with the TS110-7A1-AP, making it the perfect choice for all your electronic needs.

Feature Benefit Bullets

Maximum DC Gate Trigger Current: 0.001 mA

This low current requirement for gate triggering allows for efficient and precise control of the silicon controlled rectifier, ensuring reliable operation.

Non Repetitive Peak On-state Current: 25 A

The high peak on-state current capability makes this product suitable for handling high current loads and surge conditions, enhancing its versatility for various applications.

Maximum On-state Current: 0.8 A

With a maximum on-state current of 0.8 A, this SCR can effectively handle moderate current levels, making it suitable for a wide range of applications.

Maximum Leakage Current: 0.1 mA

The low leakage current of 0.1 mA ensures minimal power loss and efficient operation of the silicon controlled rectifier, contributing to overall energy efficiency.

Maximum Operating Temperature: 125 °C

The high maximum operating temperature of 125 °C ensures reliable performance even under demanding operating conditions, making this SCR ideal for industrial applications.

Trigger Device Type: SCR

Being an SCR (Silicon Controlled Rectifier) ensures reliable and precise control of current flow, making it suitable for applications requiring accurate power management.

Terminal Finish: MATTE TIN

The matte tin terminal finish provides good conductivity and resistance to corrosion, ensuring long-term reliability and stable performance of the SCR.

Maximum DC Gate Trigger Voltage: 0.8 V

The low gate trigger voltage of 0.8 V ensures efficient and precise triggering of the SCR, allowing for accurate control of the switching operation.

Repetitive Peak Off-state Voltage: 700 V

The high off-state voltage rating of 700 V ensures robust isolation and protection against voltage spikes, making this SCR suitable for high voltage applications.

Minimum Critical Rate of Rise of Off-state Voltage: 15 V/us

With a minimum critical rate of rise of off-state voltage of 15 V/us, this SCR can effectively handle fast-changing voltage conditions, ensuring reliable performance in dynamic environments.

Maximum Holding Current: 2 mA

The maximum holding current of 2 mA ensures stable operation of the SCR in the on-state, preventing unintentional turn-off and enhancing overall reliability.

Technical Specifications

Silicon Controlled Rectifiers (SCR) TS110-7A1-AP attributes and parameters. Explore more Silicon Controlled Rectifiers (SCR) devices from STMicroelectronics

Specs

Minimum Critical Rate of Rise of Off-state Voltage:

15 V/us

Maximum DC Gate Trigger Current:

.001 mA

Maximum DC Gate Trigger Voltage:

.8 V

Maximum Holding Current:

2 mA

JESD-609 Code:

e3

Maximum Leakage Current:

.1 mA

Non Repetitive Peak On-state Current:

25 A

Maximum On-state Current:

.8 A

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-40 Cel

Repetitive Peak Off-state Voltage:

700 V

Sub-Category:

Silicon Controlled Rectifiers

Surface Mount:

NO

Terminal Finish:

MATTE TIN

Trigger Device Type:

SCR

Trade Compliance

TS110-7A1-AP Triggering Devices trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

Category top products 20

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