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TN1625-800G

STMicroelectronics

TN1625-800G by STMicroelectronics

TN1625-800G by STMicroelectronics is a single SCR in a rectangular plastic package, ideal for high-voltage applications. It supports up to 800 V repetitive peak reverse voltage and 199 A non-repetitive peak on-state current. With a max operating temp of 125 °C, it's perfect for demanding environments.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 2,897 parts In-Stock

1+ parts

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2,897

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Anansix

USA . 2,494 parts In-Stock

1+ parts

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2,494

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Vyrian

USA . 145 parts In-Stock

1+ parts

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145

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

IDEA Electronic Components Group

UK . 1,289 parts In-Stock

1+ parts

$2.072

100+ parts

-

1k+ parts

$1.865

10k+ parts

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1,289

$2.072

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$1.865

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MKK Technologies

India . 1,687 parts In-Stock

1+ parts

$3.896

100+ parts

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1,687

$3.896

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DigiPath Technology Company

USA . 1,687 parts In-Stock

1+ parts

$3.896

100+ parts

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10k+ parts

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1,687

$3.896

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Corphita

USA . 3,895 parts In-Stock

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3,895

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Parana Technologies

USA . 1,700 parts In-Stock

1+ parts

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100+ parts

$2.477

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1,700

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$2.477

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Overview

Elevate your power management solutions with the TN1625-800G from STMicroelectronics, a trusted name in semiconductor innovation. This high-performance Silicon Controlled Rectifier (SCR) offers exceptional reliability and efficiency, making it ideal for diverse applications like motor control, power supplies, and lighting systems. With its robust design and superior heat handling, you can count on reduced system failures and enhanced longevity, driving significant value for your projects. Choose STMicroelectronics and experience quality that powers progress!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy casing provides excellent durability and protection against environmental factors, making it suitable for various applications.

Maximum DC Gate Trigger Current: 25 mA

With a maximum gate trigger current of just 25 mA, this SCR is energy-efficient and reduces power consumption in gate driving circuits.

Configuration: SINGLE

The single configuration simplifies design and integration into circuits, making it an ideal choice for compact applications.

Non Repetitive Peak On-state Current: 199 A

The ability to handle a non-repetitive peak on-state current of 199 A allows this SCR to manage brief high-current situations effectively, enhancing reliability.

Surface Mount: YES

Being surface mount compatible allows for reduced PCB space and improved assembly efficiency, making it suitable for modern electronic devices.

Package Shape: RECTANGULAR

The rectangular package shape optimizes space usage on PCBs and facilitates more efficient thermal management.

Terminal Form: GULL WING

Gull wing terminals provide a solid mechanical connection and ease of soldering, which is essential for reliable performance.

Maximum On-state Current: 16 A

With a maximum on-state current of 16 A, this SCR is capable of handling substantial loads, making it suitable for power control applications.

Maximum Leakage Current: 0.005 mA

Extremely low maximum leakage current minimizes power loss and improves efficiency in circuit designs.

Repetitive Peak Reverse Voltage: 800 V

A high repetitive peak reverse voltage rating of 800 V ensures robustness against voltage spikes in high voltage applications.

Maximum Repetitive Peak Off-state Leakage Current: 5 uA

With a very low off-state leakage current of 5 uA, this SCR enhances overall circuit efficiency and reduces heat generation.

No. of Terminals: 2

The two-terminal design simplifies connection and integration into various electronic circuits, boosting flexibility in implementation.

Package Style (Meter): SMALL OUTLINE

A small outline package style is ideal for space-constrained applications while providing adequate performance levels.

Maximum Operating Temperature: 125 °C

Able to operate at temperatures up to 125 °C, this SCR is suitable for harsh environments, ensuring reliability under extreme conditions.

Trigger Device Type: SCR

As a silicon controlled rectifier, it offers precise control over current flow, making it optimal for switching and phase control applications.

Minimum Operating Temperature: -40 °C

With a minimum operating temperature of -40 °C, this SCR is suitable for use in cold environments, broadening its application range.

Terminal Finish: MATTE TIN

Matte tin finish provides excellent solderability and corrosion resistance, enhancing long-term reliability in electronic circuits.

Terminal Position: SINGLE

A single terminal position helps reduce the complexity of the PCB layout, making it easier to integrate into tight spaces.

Maximum RMS On-state Current: 12 A

The ability to handle a maximum RMS on-state current of 12 A makes this SCR effective for medium power applications.

Maximum DC Gate Trigger Voltage: 1.3 V

A low maximum gate trigger voltage of 1.3 V helps in minimizing the drive requirements and heating effects in the circuit.

Case Connection: ANODE

Anode case connection optimizes design and ensures effective integration into various electronic configurations.

Repetitive Peak Off-state Voltage: 800 V

Repetitive peak off-state voltage of 800 V provides high voltage capability, making it suitable for demanding industrial applications.

Minimum Critical Rate of Rise of Off-state Voltage: 500 V/us

This high critical rate of rise of off-state voltage enables effective protection against voltage transients, enhancing circuit safety.

Maximum Holding Current: 40 mA

A maximum holding current of 40 mA allows for the reliable turning off of the SCR, contributing to efficient control in circuits.

Technical Specifications

Silicon Controlled Rectifiers (SCR) TN1625-800G attributes and parameters. Explore more Silicon Controlled Rectifiers (SCR) devices from STMicroelectronics

Specs

Additional Features:

HIGH RELIABILITY

Case Connection:

Configuration:

Minimum Critical Rate of Rise of Off-state Voltage:

500 V/us

Maximum DC Gate Trigger Current:

25 mA

Maximum DC Gate Trigger Voltage:

1.3 V

Maximum Holding Current:

40 mA

JESD-30 Code:

R-PSSO-G2

JESD-609 Code:

e3

Maximum Leakage Current:

.005 mA

Non Repetitive Peak On-state Current:

199 A

No. of Elements:

1

No. of Terminals:

2

Maximum On-state Current:

16 A

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

Qualification:

Not Qualified

Maximum RMS On-state Current:

12 A

Maximum Repetitive Peak Off-state Leakage Current:

5 uA

Repetitive Peak Off-state Voltage:

800 V

Repetitive Peak Reverse Voltage:

800 V

Sub-Category:

Silicon Controlled Rectifiers

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Position:

Trigger Device Type:

SCR

Trade Compliance

TN1625-800G Triggering Devices trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.30.00.80

SB

8541.30.00.80

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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