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TN1625-1000G

STMicroelectronics

TN1625-1000G by STMicroelectronics

TN1625-1000G by STMicroelectronics is a single SCR in a small outline package, ideal for high-voltage applications. It supports up to 1000 V repetitive peak reverse voltage and 190 A non-repetitive peak on-state current. With a max operating temp of 125 °C, it's perfect for robust electronic designs.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 4,991 parts In-Stock

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4,991

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Vyrian

USA . 1,498 parts In-Stock

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1,498

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Anansix

USA . 203 parts In-Stock

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203

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Distributors (Availability)

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IDEA Electronic Components Group

UK . 1,699 parts In-Stock

1+ parts

$2.655

100+ parts

-

1k+ parts

$2.390

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1,699

$2.655

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$2.390

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MKK Technologies

India . 1,234 parts In-Stock

1+ parts

$4.993

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1,234

$4.993

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DigiPath Technology Company

USA . 1,234 parts In-Stock

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$4.993

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1,234

$4.993

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Kepictronics

USA . 15,000 parts In-Stock

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15,000

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Corphita

USA . 4,941 parts In-Stock

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4,941

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Authorized Procurement Solutions

USA . 2,700 parts In-Stock

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2,700

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Parana Technologies

USA . 639 parts In-Stock

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$3.175

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639

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$3.175

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Overview

Unlock the power of reliability with the TN1625-1000G from STMicroelectronics, a leader in advanced semiconductor solutions. Designed for robust performance in demanding applications, this Silicon Controlled Rectifier excels in efficiency and durability, offering unparalleled value. With its compact surface mount design and impressive voltage capabilities, it's perfect for automotive, industrial, and consumer electronics. Trust STMicroelectronics to deliver quality you can depend on.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy body material offers durability and resistance to environmental factors, making it suitable for various applications.

Maximum DC Gate Trigger Current: 25 mA

A maximum gate trigger current of 25 mA allows for efficient operation while ensuring low power consumption.

Configuration: SINGLE

The single configuration simplifies circuit design and integration, making it ideal for compact layouts.

Non Repetitive Peak On-state Current: 190 A

The high non-repetitive peak on-state current capability enables the device to handle surges, enhancing its robustness in tough conditions.

Surface Mount: YES

Surface mount compatibility facilitates automated assembly processes, reducing manufacturing costs and improving reliability.

Package Shape: RECTANGULAR

The rectangular shape is space-efficient, allowing for better usage of PCB real estate in various applications.

Terminal Form: GULL WING

Gull wing terminals provide better mechanical strength and soldering reliability, ensuring a stable connection in operation.

Maximum On-state Current: 10 A

With a maximum on-state current of 10 A, this SCR can effectively handle moderate current loads in diverse applications.

Maximum Leakage Current: 2 mA

The low leakage current of 2 mA minimizes energy loss, contributing to overall energy efficiency in the circuit.

Repetitive Peak Reverse Voltage: 1000 V

A high peak reverse voltage rating of 1000 V allows the SCR to operate safely in high-voltage environments.

No. of Terminals: 2

The two-terminal design simplifies connections and reduces the complexity of circuit boards.

Package Style (Meter): SMALL OUTLINE

The small outline package style maximizes space efficiency on PCBs, catering to compact electronic designs.

Maximum Operating Temperature: 125 °C

A maximum operating temperature of 125 °C enhances reliability under high-temperature conditions, suitable for a variety of environments.

Trigger Device Type: SCR

The SCR trigger type enables controlled switching, making it ideal for applications involving phase control and power regulation.

Minimum Operating Temperature: -40 °C

Operating down to -40 °C ensures functionality in extreme cold conditions, broadening the range of application possibilities.

Terminal Finish: MATTE TIN

Matte tin terminal finish improves solderability and corrosion resistance, enhancing the longevity of the connections.

Terminal Position: SINGLE

The single terminal position simplifies placement and integration into various circuit designs.

Maximum RMS On-state Current: 12 A

With a maximum RMS on-state current of 12 A, it can sustain higher levels of continuous current demand.

Maximum DC Gate Trigger Voltage: 1.3 V

A low gate trigger voltage of 1.3 V minimizes the energy needed to activate the SCR, enhancing efficiency.

Case Connection: ANODE

An anode case connection is standard in SCR devices, promoting compatibility with a wide range of circuits.

Repetitive Peak Off-state Voltage: 1000 V

This rating allows usage in high-voltage applications, ensuring safe off-state performance.

Minimum Critical Rate of Rise of Off-state Voltage: 500 V/us

The ability to handle a rapid rise in off-state voltage provides great versatility in switching applications.

Maximum Holding Current: 40 mA

A maximum holding current of 40 mA ensures reliable operation during the 'off' state, preventing accidental triggering.

Technical Specifications

Silicon Controlled Rectifiers (SCR) TN1625-1000G attributes and parameters. Explore more Silicon Controlled Rectifiers (SCR) devices from STMicroelectronics

Specs

Case Connection:

Configuration:

Minimum Critical Rate of Rise of Off-state Voltage:

500 V/us

Maximum DC Gate Trigger Current:

25 mA

Maximum DC Gate Trigger Voltage:

1.3 V

Maximum Holding Current:

40 mA

JESD-30 Code:

R-PSSO-G2

JESD-609 Code:

e3

Maximum Leakage Current:

2 mA

Non Repetitive Peak On-state Current:

190 A

No. of Elements:

1

No. of Terminals:

2

Maximum On-state Current:

10 A

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

Qualification:

Not Qualified

Maximum RMS On-state Current:

12 A

Repetitive Peak Off-state Voltage:

1000 V

Repetitive Peak Reverse Voltage:

1000 V

Sub-Category:

Silicon Controlled Rectifiers

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Position:

Trigger Device Type:

SCR

Trade Compliance

TN1625-1000G Triggering Devices trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.30.00.80

SB

8541.30.00.80

PCN

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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