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TN1625-800G-TR

STMicroelectronics

TN1625-800G-TR by STMicroelectronics

STMicroelectronics TN1625-800G-TR is a SCR with 10A max on-state current, 25mA DC gate trigger current, and 190A non-repetitive peak on-state current. Ideal for applications requiring high power switching in industrial electronics.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 2,858 parts In-Stock

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2,858

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Anansix

USA . 437 parts In-Stock

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437

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Vyrian

USA . 76 parts In-Stock

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76

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Distributors (Availability)

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IDEA Electronic Components Group

UK . 1,267 parts In-Stock

1+ parts

$3.673

100+ parts

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1k+ parts

$3.305

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1,267

$3.673

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$3.305

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MKK Technologies

India . 1,395 parts In-Stock

1+ parts

$6.906

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1,395

$6.906

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DigiPath Technology Company

USA . 1,395 parts In-Stock

1+ parts

$6.906

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1,395

$6.906

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Parana Technologies

USA . 187 parts In-Stock

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$4.391

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187

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$4.391

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Corphita

USA . 181 parts In-Stock

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Overview

Looking for a reliable Silicon Controlled Rectifier (SCR) for your electronic projects? Look no further than the TN1625-800G-TR by STMicroelectronics. With a maximum on-state current of 10A and a repetitive peak reverse voltage of 800V, this SCR is perfect for a wide range of applications. The high-quality construction and advanced features provided by STMicroelectronics ensure top-notch performance and durability. Trust in the value and benefits that this SCR offers to take your projects to the next level.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

PLASTIC/EPOXY construction provides durability and protection for the internal components of the SCR, ensuring reliable performance over time.

Maximum DC Gate Trigger Current: 25 mA

Low gate trigger current requirement allows for efficient control of the SCR, enabling precise operation in various applications.

Configuration: SINGLE

Single configuration simplifies installation and integration of the SCR into electronic circuits, making it user-friendly.

Non Repetitive Peak On-state Current: 190 A

High peak on-state current capability allows the SCR to handle large loads and surges, making it suitable for high-power applications.

Surface Mount: YES

Surface mount capability enables easy PCB assembly and space-saving design, making the SCR ideal for compact electronic devices.

Package Shape: RECTANGULAR

Rectangular package shape provides efficient use of space and facilitates heat dissipation, contributing to the overall performance of the SCR.

Terminal Form: GULL WING

Gull wing terminal form allows for secure connections and easy soldering, ensuring reliable electrical contact and stability.

Maximum On-state Current: 10 A

High on-state current rating enables the SCR to handle moderate loads with ease, making it versatile for a wide range of applications.

Maximum Leakage Current: 2 mA

Low leakage current helps to conserve power and reduce energy loss, enhancing the efficiency of the SCR in operation.

Repetitive Peak Reverse Voltage: 800 V

High reverse voltage rating provides robust protection against voltage spikes and reverse polarity, ensuring the SCR's longevity and reliability.

Maximum Repetitive Peak Off-state Leakage Current: 5 uA

Low off-state leakage current minimizes power dissipation and improves the overall efficiency of the SCR during standby or off-state operation.

No. of Terminals: 2

Two terminals simplify the connection process and ensure proper polarity, making the SCR easy to integrate into electronic circuits.

Package Style (Meter): SMALL OUTLINE

Small outline package style offers space-saving benefits and facilitates PCB layout, making the SCR suitable for compact electronic designs.

Maximum Operating Temperature: 125 °C

High maximum operating temperature tolerance ensures the SCR can withstand elevated temperatures, making it suitable for industrial and harsh environment applications.

Trigger Device Type: SCR

SCR trigger device type ensures reliable and precise switching operation, making the SCR a dependable choice for control applications.

Minimum Operating Temperature: -40 °C

Low minimum operating temperature capability allows the SCR to function effectively in cold environments, enhancing its versatility in various conditions.

Terminal Finish: MATTE TIN

Matte tin terminal finish provides corrosion resistance and solderability, ensuring long-term electrical connectivity and durability of the SCR.

Terminal Position: SINGLE

Single terminal position simplifies installation and maintenance of the SCR, enhancing user convenience and ease of use.

Maximum RMS On-state Current: 12 A

High RMS on-state current rating allows the SCR to handle continuous currents effectively, making it reliable for sustained operation in various applications.

Maximum DC Gate Trigger Voltage: 1.3 V

Low gate trigger voltage requirement ensures efficient control and operation of the SCR, enabling precise switching in electronic circuits.

Case Connection: ANODE

Anode case connection simplifies circuit design and ensures proper polarity orientation of the SCR, enhancing its ease of use and integration.

Repetitive Peak Off-state Voltage: 800 V

High repetitive peak off-state voltage rating provides reliable insulation and protection against voltage spikes, ensuring the SCR's safety in operation.

Minimum Critical Rate of Rise of Off-state Voltage: 500 V/us

High minimum critical rate of rise of off-state voltage tolerance allows the SCR to handle rapid voltage changes, making it suitable for dynamic load conditions.

Maximum Holding Current: 40 mA

High holding current capability ensures the SCR remains in the on-state during brief interruptions, enhancing its stability and reliability in operation.

Technical Specifications

Silicon Controlled Rectifiers (SCR) TN1625-800G-TR attributes and parameters. Explore more Silicon Controlled Rectifiers (SCR) devices from STMicroelectronics

Specs

Additional Features:

HIGH RELIABILITY

Case Connection:

Configuration:

Minimum Critical Rate of Rise of Off-state Voltage:

500 V/us

Maximum DC Gate Trigger Current:

25 mA

Maximum DC Gate Trigger Voltage:

1.3 V

Maximum Holding Current:

40 mA

JESD-30 Code:

R-PSSO-G2

JESD-609 Code:

e3

Maximum Leakage Current:

2 mA

Non Repetitive Peak On-state Current:

190 A

No. of Elements:

1

No. of Terminals:

2

Maximum On-state Current:

10 A

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

Qualification:

Not Qualified

Maximum RMS On-state Current:

12 A

Maximum Repetitive Peak Off-state Leakage Current:

5 uA

Repetitive Peak Off-state Voltage:

800 V

Repetitive Peak Reverse Voltage:

800 V

Sub-Category:

Silicon Controlled Rectifiers

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Position:

Trigger Device Type:

SCR

Trade Compliance

TN1625-800G-TR Triggering Devices trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.30.00.80

SB

8541.30.00.80

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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