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STS7DNF30L

STMicroelectronics

STS7DNF30L by STMicroelectronics

STS7DNF30L by STMicroelectronics is an N-channel MOSFET designed for efficient switching applications. It features a max drain current of 7 A, a breakdown voltage of 30 V, and operates at up to 150 °C. Ideal for compact power management in electronic devices.

Median Price

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Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 4,235 parts In-Stock

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Digiode

USA . 1,907 parts In-Stock

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Anansix

USA . 179 parts In-Stock

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179

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IDEA Electronic Components Group

UK . 1,594 parts In-Stock

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$1.378

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$1.240

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$1.378

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MKK Technologies

India . 889 parts In-Stock

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$2.592

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$2.592

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DigiPath Technology Company

USA . 889 parts In-Stock

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$2.592

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889

$2.592

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Kepictronics

USA . 10,065 parts In-Stock

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Corphita

USA . 1,564 parts In-Stock

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Parana Technologies

USA . 1,303 parts In-Stock

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$1.648

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Overview

Experience unparalleled reliability and efficiency with the STS7DNF30L from STMicroelectronics, a leader in semiconductor innovation. This N-channel power FET is designed for seamless switching applications, providing exceptional performance while ensuring minimal energy loss. Its compact surface-mount design makes integration effortless, empowering your projects with high durability and thermal stability. Choose STMicroelectronics for unmatched quality that drives success in diverse applications—from automotive to consumer electronics—delivering value that truly elevates your engineering potential.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy material provides durability and resistance to environmental factors, making the FET suitable for various applications.

Polarity or Channel Type: N-CHANNEL

N-channel FETs typically offer better efficiency and performance for switching applications, making this product ideal for power management.

Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

The built-in diode enhances the functionality and reliability of the device in applications requiring reverse polarity protection.

Transistor Application: SWITCHING

Designed for switching applications, this FET can efficiently control power in circuits, contributing to effective energy management.

Surface Mount: YES

The surface mount feature facilitates easy integration into modern compact circuit designs, optimizing space usage.

Minimum DS Breakdown Voltage: 30 V

A minimum breakdown voltage of 30V allows this FET to handle a range of applications safely, ensuring reliable performance.

Package Shape: RECTANGULAR

The rectangular shape offers uniformity in design and compatibility with a wide variety of layouts.

Terminal Form: GULL WING

Gull wing terminals simplify soldering and improve mechanical stability, making the assembly process more efficient.

Operating Mode: ENHANCEMENT MODE

Operating in enhancement mode enables this FET to turn on fully with minimum gate voltage, enhancing efficiency.

No. of Elements: 2

Having 2 elements allows for versatile application options and improved performance in multi-channel designs.

Maximum Pulsed Drain Current (IDM): 28 A

The high pulsed drain current capacity allows this FET to handle transient loads effectively, suitable for dynamic applications.

Maximum Drain Current (Abs) (ID): 7 A

A maximum continuous drain current of 7A enables solid performance in applications with moderate load requirements.

No. of Terminals: 8

With 8 terminals, this FET provides multiple connection points for better circuit integration and flexibility.

Maximum Power Dissipation (Abs): 2 W

A power dissipation of 2W ensures efficient thermal management, reducing the risk of overheating in high-performance environments.

Package Style (Meter): SMALL OUTLINE

The small outline package offers a compact footprint for space-constrained applications without compromising performance.

Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR

MOS technology provides enhanced switching speeds and lower on-resistance, resulting in superior efficiency.

Maximum Operating Temperature: 150 °C

A high operating temperature limit of 150 °C makes this FET suitable for demanding environments and applications.

Transistor Element Material: SILICON

Silicon as the element material ensures a reliable and robust performance in a wide array of electronic applications.

Terminal Finish: TIN LEAD

Tin-lead terminal finish provides good solderability and corrosion resistance, enhancing the reliability of connections.

Maximum Drain Current (ID): 7 A

Allows for reliable operation under moderate load conditions, suitable for a variety of applications.

Maximum Drain-Source On Resistance: 0.026 ohm

Low on-resistance minimizes power loss during operation, making this FET an efficient choice for low-power applications.

Terminal Position: DUAL

Dual terminal positions enable flexible circuit layouts and connectivity options.

Technical Specifications

Power Field Effect Transistors (FET) STS7DNF30L attributes and parameters. Explore more Power Field Effect Transistors (FET) devices from STMicroelectronics

Specs

Minimum DS Breakdown Voltage:

30 V

Maximum Drain Current (Abs) (ID):

7 A

Maximum Drain Current (ID):

7 A

Maximum Drain-Source On Resistance:

.026 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JESD-30 Code:

R-PDSO-G8

JESD-609 Code:

e0

No. of Elements:

2

No. of Terminals:

8

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

2 W

Maximum Pulsed Drain Current (IDM):

28 A

Qualification:

Not Qualified

Sub-Category:

FET General Purpose Power

Surface Mount:

YES

Terminal Finish:

TIN LEAD

Terminal Form:

GULL WING

Terminal Position:

DUAL

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

STS7DNF30L Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

Category top products 20

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