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STP12IE95F4

STMicroelectronics

STP12IE95F4 by STMicroelectronics

STP12IE95F4 from STMicroelectronics is a powerful NPN BJT designed for switching applications. It features a max power dissipation of 21W, supports up to 12A collector current, and operates at temperatures up to 150 °C. Its compact flange mount design ensures efficient thermal management.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 3,633 parts In-Stock

1+ parts

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3,633

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Vyrian

USA . 1,394 parts In-Stock

1+ parts

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1,394

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Anansix

USA . 356 parts In-Stock

1+ parts

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356

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

IDEA Electronic Components Group

UK . 731 parts In-Stock

1+ parts

$0.512

100+ parts

-

1k+ parts

$0.461

10k+ parts

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731

$0.512

-

$0.461

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MKK Technologies

India . 405 parts In-Stock

1+ parts

$0.964

100+ parts

-

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405

$0.964

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DigiPath Technology Company

USA . 405 parts In-Stock

1+ parts

$0.964

100+ parts

-

1k+ parts

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10k+ parts

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405

$0.964

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-

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Corphita

USA . 2,658 parts In-Stock

1+ parts

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2,658

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Parana Technologies

USA . 1,847 parts In-Stock

1+ parts

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100+ parts

$0.613

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1,847

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$0.613

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Overview

Elevate your projects with the STP12IE95F4 from STMicroelectronics—an exemplary power BJT designed for efficiency and reliability. Renowned for its exceptional quality, STMicroelectronics ensures this NPN transistor excels in switching applications, offering superior performance under demanding conditions. Experience seamless integration with a robust 21W power dissipation and a maximum collector current of 12A, making it ideal for various industrial and consumer electronics. Unlock innovation and drive success with a trusted partner in technology!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy construction provides durability and protects the transistor from environmental factors, ensuring reliable performance in various applications.

Polarity or Channel Type: NPN

NPN transistors are widely used for switching and amplification applications, making this product versatile for circuit design.

Configuration: SINGLE WITH BUILT-IN FET AND DIODE

The integration of a built-in FET and diode simplifies the circuit design and reduces component count, enhancing overall efficiency.

Transistor Application: SWITCHING

Designed specifically for switching applications, this transistor can efficiently control high power loads, making it ideal for power management solutions.

Package Shape: RECTANGULAR

The rectangular package shape allows for easy integration into various PCB layouts, facilitating efficient space utilization.

Terminal Form: THROUGH-HOLE

Through-hole terminals provide strong mechanical support and reliability in high-stress applications compared to surface mount alternatives.

No. of Terminals: 4

With 4 terminals, this transistor offers a balanced configuration for power and control, making it suitable for a range of applications.

Maximum Power Dissipation (Abs): 21 W

The high power dissipation capability allows this transistor to handle significant loads, making it ideal for demanding applications.

Package Style (Meter): FLANGE MOUNT

Flange mount packaging provides enhanced stability and heat dissipation, making the transistor suitable for high-performance environments.

Minimum DC Current Gain (hFE): 5

A minimum current gain of 5 ensures reliable amplification, which is critical for efficient operation in switching applications.

Maximum Operating Temperature: 150 °C

The ability to operate at high temperatures ensures reliable performance in environments where thermal management is a concern.

Transistor Element Material: SILICON

Silicon is the standard material for transistors, providing excellent electrical characteristics and stability over a wide range of applications.

Maximum Collector Current (IC): 12 A

A high collector current rating makes this transistor suitable for heavy loads, increasing its applicability in various power circuits.

Terminal Position: SINGLE

Having a single terminal position streamlines the design process, making it easier to connect and solder components on the circuit board.

Case Connection: ISOLATED

Isolated case connections help prevent unwanted electrical interference, providing more reliable operation in sensitive applications.

Maximum Time At Peak Reflow Temperature (s): 40

A maximum reflow time of 40 seconds ensures compatibility with standard soldering processes, facilitating ease of manufacturing.

Peak Reflow Temperature °C: 245

With a high peak reflow temperature, this transistor can withstand the heat during assembly without compromising performance or reliability.

Technical Specifications

Power Bipolar Junction Transistors (BJT) STP12IE95F4 attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from STMicroelectronics

Specs

Case Connection:

ISOLATED

Maximum Collector Current (IC):

Minimum DC Current Gain (hFE):

5

JEDEC-95 Code:

TO-220

JESD-30 Code:

R-PSFM-T4

No. of Elements:

1

No. of Terminals:

4

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Peak Reflow Temperature (C):

245

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Maximum Time At Peak Reflow Temperature (s):

40

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

STP12IE95F4 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

Category top products 20

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