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STH85N15F4-2

STMicroelectronics

STH85N15F4-2 by STMicroelectronics

STH85N15F4-2 from STMicroelectronics is an N-channel MOSFET ideal for switching applications. It features a max drain current of 85 A, a breakdown voltage of 150 V, and operates at up to 175 °C. Its compact design ensures efficient performance in power management systems.

Median Price

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Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

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Anansix

USA . 1,955 parts In-Stock

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Vyrian

USA . 1,381 parts In-Stock

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Digiode

USA . 451 parts In-Stock

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451

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Distributors (Availability)

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IDEA Electronic Components Group

UK . 513 parts In-Stock

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$0.988

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$0.889

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513

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MKK Technologies

India . 2,307 parts In-Stock

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$1.858

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$1.858

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DigiPath Technology Company

USA . 2,307 parts In-Stock

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$1.858

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$1.858

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Corphita

USA . 2,836 parts In-Stock

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Parana Technologies

USA . 1,859 parts In-Stock

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$1.181

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Overview

Unlock unparalleled performance with the STH85N15F4-2 from STMicroelectronics, a leader in innovation and reliability. Designed for seamless power management in demanding applications, this N-channel FET excels in switching efficiency, enabling high voltage operations with minimal resistance. Built with quality materials and exceptional thermal stability, it ensures longevity and durability, giving you the confidence to elevate your designs while optimizing energy consumption. Experience the STMicroelectronics advantage today!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy for the package body ensures reliability and durability in various environmental conditions.

Polarity or Channel Type: N-CHANNEL

N-channel FETs typically offer lower on-resistance and higher efficiency, making them suitable for high-performance applications.

Configuration: SINGLE WITH BUILT-IN DIODE

The built-in diode provides protection against reverse polarity, enhancing the safety and longevity of your circuit.

Transistor Application: SWITCHING

Designed specifically for switching applications, this FET provides low power losses and faster switching speeds, ideal for power management.

Surface Mount: YES

Surface mount technology allows for compact design and easier automation in assembly processes, making it efficient for high-volume production.

Minimum DS Breakdown Voltage: 150 V

A minimum breakdown voltage of 150 V indicates the ability to operate safely in high-voltage applications, ensuring stability and reliability.

Package Shape: RECTANGULAR

The rectangular shape is conducive for compact layouts in circuit designs, optimizing space usage.

Terminal Form: GULL WING

Gull wing terminals are beneficial for surface mounting and provide good mechanical stability during soldering.

Operating Mode: ENHANCEMENT MODE

Enhancement mode operation allows the transistor to be turned off when no voltage is applied, enhancing power efficiency in circuits.

Maximum Pulsed Drain Current (IDM): 340 A

A high pulsed drain current capability enables the FET to handle intense current spikes, making it suitable for demanding applications.

Maximum Drain Current (Abs) (ID): 85 A

The capability to handle a maximum continuous drain current of 85 A makes this FET suitable for robust power applications.

No. of Terminals: 2

With only two terminals, this FET simplifies circuit design and integration, allowing for straightforward implementation.

Maximum Power Dissipation (Abs): 300 W

A high power dissipation rating of 300 W ensures the FET can manage substantial heat loads, promoting effective operation in high-power applications.

Package Style (Meter): SMALL OUTLINE

A small outline package style allows for efficient space utilization and easier handling in assembly processes.

Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR

MOS technology provides superior gate control, leading to high input impedance and reduced power consumption.

Maximum Operating Temperature: 175 °C

High operating temperature tolerance means reliability in extreme environments, making this FET suitable for high-performance automotive and industrial use.

Transistor Element Material: SILICON

Silicon materials offer good thermal stability and electrical characteristics, ensuring consistent performance.

Maximum Drain Current (ID): 85 A

The consistent maximum drain current of 85 A reinforces the FET's reliability in demanding, high-current applications.

Maximum Drain-Source On Resistance: 0.019 ohm

A low on-resistance of 0.019 ohm minimizes energy losses during operation, leading to improved efficiency and lower heat generation.

Terminal Position: SINGLE

Single terminal positioning facilitates easier integration into circuit designs and helps maintain a cleaner layout.

Case Connection: DRAIN

Direct connection to the drain allows for effective heat dissipation and easier connection in circuit configurations.

Technical Specifications

Power Field Effect Transistors (FET) STH85N15F4-2 attributes and parameters. Explore more Power Field Effect Transistors (FET) devices from STMicroelectronics

Specs

Case Connection:

DRAIN

Minimum DS Breakdown Voltage:

150 V

Maximum Drain Current (Abs) (ID):

85 A

Maximum Drain Current (ID):

85 A

Maximum Drain-Source On Resistance:

.019 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JESD-30 Code:

R-PSSO-G2

No. of Elements:

1

No. of Terminals:

2

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

175 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

NOT SPECIFIED

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Maximum Pulsed Drain Current (IDM):

340 A

Qualification:

Not Qualified

Sub-Category:

FET General Purpose Power

Surface Mount:

YES

Terminal Form:

GULL WING

Terminal Position:

SINGLE

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

STH85N15F4-2 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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