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STFH18N60M2

STMicroelectronics

STFH18N60M2 by STMicroelectronics

STFH18N60M2 by STMicroelectronics is a N-CHANNEL FET with 600V DS Breakdown Voltage, ideal for SWITCHING applications. It features 52A IDM and 135mJ EAS, operating in ENHANCEMENT MODE. With a max power dissipation of 25W and -55 to 150 °C temperature range, it offers efficient performance in various electronic systems.

Median Price

$3.010

Lifecycle Status

Suppliers In-Stock

13

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Arrow

USA . 361 parts In-Stock

1+ parts

$0.901

100+ parts

-

1k+ parts

-

10k+ parts

-

361

$0.901

-

-

-

Farnell

UK . 201 parts In-Stock

1+ parts

$1.610

100+ parts

$0.951

1k+ parts

$0.768

10k+ parts

-

201

$1.610

$0.951

$0.768

-

Chip1Stop

Japan . 888 parts In-Stock

1+ parts

$2.050

100+ parts

$1.190

1k+ parts

$1.000

10k+ parts

-

888

$2.050

$1.190

$1.000

-

Mouser Electronics

USA . 504 parts In-Stock

1+ parts

$3.010

100+ parts

$1.270

1k+ parts

$0.984

10k+ parts

$0.962

504

$3.010

$1.270

$0.984

$0.962

DigiKey

USA . 306 parts In-Stock

1+ parts

$3.110

100+ parts

$1.399

1k+ parts

$1.058

10k+ parts

$0.963

306

$3.110

$1.399

$1.058

$0.963

Element14

Singapore . 201 parts In-Stock

1+ parts

$3.260

100+ parts

$1.760

1k+ parts

$1.360

10k+ parts

$1.350

201

$3.260

$1.760

$1.360

$1.350

Newark

USA . 189 parts In-Stock

1+ parts

$3.280

100+ parts

-

1k+ parts

$1.440

10k+ parts

$1.290

189

$3.280

-

$1.440

$1.290

Avnet

USA . 920 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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920

-

-

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Verical

USA . 361 parts In-Stock

1+ parts

-

100+ parts

-

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361

-

-

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-

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 2,699 parts In-Stock

1+ parts

$0.684

100+ parts

-

1k+ parts

-

10k+ parts

-

2,699

$0.684

-

-

-

Vyrian

USA . 1,912 parts In-Stock

1+ parts

$0.720

100+ parts

-

1k+ parts

-

10k+ parts

-

1,912

$0.720

-

-

-

Cyclops Electronics Ltd

UK . 5,520 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

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5,520

-

-

-

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Anansix

USA . 865 parts In-Stock

1+ parts

-

100+ parts

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865

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Corphita

USA . 3,438 parts In-Stock

1+ parts

$0.648

100+ parts

-

1k+ parts

-

10k+ parts

-

3,438

$0.648

-

-

-

IDEA Electronic Components Group

UK . 1,432 parts In-Stock

1+ parts

$0.720

100+ parts

-

1k+ parts

$0.648

10k+ parts

-

1,432

$0.720

-

$0.648

-

Continental Prestige Electronics

USA . 470 parts In-Stock

1+ parts

$1.170

100+ parts

$0.742

1k+ parts

$0.719

10k+ parts

-

470

$1.170

$0.742

$0.719

-

MKK Technologies

India . 2,100 parts In-Stock

1+ parts

$1.355

100+ parts

-

1k+ parts

-

10k+ parts

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2,100

$1.355

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-

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DigiPath Technology Company

USA . 2,100 parts In-Stock

1+ parts

$1.355

100+ parts

-

1k+ parts

-

10k+ parts

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2,100

$1.355

-

-

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Microchip USA

USA . 6,308 parts In-Stock

1+ parts

$15.535

100+ parts

-

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-

10k+ parts

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6,308

$15.535

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-

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Lixinc

USA . 9,452 parts In-Stock

1+ parts

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9,452

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Epart123

USA . 5,520 parts In-Stock

1+ parts

-

100+ parts

$0.850

1k+ parts

-

10k+ parts

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5,520

-

$0.850

-

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GreenTree Electronics

Israel . 5,520 parts In-Stock

1+ parts

-

100+ parts

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5,520

-

-

-

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Alle Elektronik GmbH

Germany . 4,516 parts In-Stock

1+ parts

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100+ parts

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4,516

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-

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Authorized Procurement Solutions

USA . 598 parts In-Stock

1+ parts

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100+ parts

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598

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Parana Technologies

USA . 541 parts In-Stock

1+ parts

-

100+ parts

$0.861

1k+ parts

-

10k+ parts

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541

-

$0.861

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Overview

Enhance your power management solutions with the STFH18N60M2 by STMicroelectronics. Crafted with precision by a leading manufacturer, this N-channel Power FET offers reliable performance in switching applications. With a high DS breakdown voltage of 600V and a pulsing drain current of 52A, this transistor is designed for efficiency and durability. Whether you're looking to optimize your system's power distribution or enhance its performance, the STFH18N60M2 delivers exceptional value and benefits that cater to your specific needs. Upgrade to superior power management with STMicroelectronics today.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the components inside, making it suitable for various applications and environments.

Polarity or Channel Type: N-CHANNEL

Allows for efficient switching and control of power flow in electronic circuits.

Configuration: SINGLE WITH BUILT-IN DIODE

The built-in diode simplifies circuit design and enhances overall efficiency.

Transistor Application: SWITCHING

Optimized for fast switching operations, ideal for applications requiring rapid on/off cycles.

Minimum DS Breakdown Voltage: 600 V

Provides a high level of voltage protection, ensuring reliable performance in high-power applications.

Package Shape: RECTANGULAR

Efficient use of space and easy integration into circuit designs.

Terminal Form: THROUGH-HOLE

Simplifies soldering and connection processes, enhancing ease of installation.

Operating Mode: ENHANCEMENT MODE

Allows for precise control of the transistor's conductance, improving overall circuit efficiency.

Maximum Pulsed Drain Current (IDM): 52 A

Capable of handling high current pulses, suitable for power-intensive applications.

Avalanche Energy Rating (EAS): 135 mJ

Offers protection against power surges and transients, increasing the reliability of the circuit.

Maximum Drain Current (Abs) (ID): 13 A

Sufficient current handling capacity for medium to high-power applications.

No. of Terminals: 3

Simplifies circuit connection and layout design.

Maximum Power Dissipation (Abs): 25 W

Able to dissipate heat effectively, ensuring stable operation under high load conditions.

Package Style (Meter): FLANGE MOUNT

Enables secure mounting and heat dissipation in various applications.

Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR

Provides high switching speeds and low power consumption, enhancing overall performance.

Maximum Operating Temperature: 150 °C

Capable of operating in high-temperature environments, suitable for industrial applications.

Transistor Element Material: SILICON

Offers high reliability and performance consistency over a wide range of operating conditions.

Minimum Operating Temperature: -55 °C

Capable of operating in low-temperature environments, suitable for a variety of applications.

Maximum Drain-Source On Resistance: 0.28 ohm

Low on-resistance ensures efficient power flow and minimal heat generation.

Terminal Position: SINGLE

Simplifies circuit connection and layout design.

Case Connection: ISOLATED

Provides electrical isolation for enhanced safety and protection in circuit designs.

Technical Specifications

Power Field Effect Transistors (FET) STFH18N60M2 attributes and parameters. Explore more Power Field Effect Transistors (FET) devices from STMicroelectronics

Specs

Avalanche Energy Rating (EAS):

135 mJ

Case Connection:

ISOLATED

Minimum DS Breakdown Voltage:

600 V

Maximum Drain Current (Abs) (ID):

13 A

Maximum Drain Current (ID):

13 A

Maximum Drain-Source On Resistance:

.28 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JEDEC-95 Code:

TO-220AB

JESD-30 Code:

R-PSFM-T3

No. of Elements:

1

No. of Terminals:

3

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Peak Reflow Temperature (C):

NOT SPECIFIED

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Maximum Pulsed Drain Current (IDM):

52 A

Surface Mount:

NO

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

STFH18N60M2 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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