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SPC58EC80C3NEC1X

STMicroelectronics

SPC58EC80C3NEC1X by STMicroelectronics

SPC58EC80C3NEC1X by STMicroelectronics is a 32-bit microcontroller with a max supply voltage of 1.26V and operates in extreme temperatures from -40 °C to 125 °C. It features integrated cache, DMA channels, and supports Ethernet connectivity. Ideal for automotive applications, it ensures reliable performance with AEC-Q100 screening.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

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Vyrian

USA . 4,983 parts In-Stock

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Digiode

USA . 3,741 parts In-Stock

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Anansix

USA . 2,219 parts In-Stock

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2,219

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Distributors (Availability)

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AZTECH Wire

Italy . 961 parts In-Stock

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$10.320

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961

$10.320

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IDEA Electronic Components Group

UK . 547 parts In-Stock

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$64.110

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$57.699

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547

$64.110

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$57.699

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MKK Technologies

India . 1,945 parts In-Stock

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$120.555

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1,945

$120.555

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DigiPath Technology Company

USA . 1,945 parts In-Stock

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$120.555

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$120.555

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Corphita

USA . 2,644 parts In-Stock

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Parana Technologies

USA . 1,697 parts In-Stock

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$76.654

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$76.654

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Overview

Unlock unparalleled performance with the SPC58EC80C3NEC1X microcontroller from STMicroelectronics, a leader in innovation and quality. Designed for automotive and industrial applications, this powerful 32-bit MCU combines advanced processing capabilities with low power consumption, ensuring reliability even in extreme conditions. Experience exceptional efficiency, robust connectivity options, and integrated features that elevate your designs, driving success in every project.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy enhances durability and helps in reducing manufacturing costs.

Integrated Cache: YES

An integrated cache increases operational efficiency and speed by allowing quicker access to frequently used data.

Surface Mount: YES

Surface mount technology allows for compact designs, enabling the microcontroller to fit into smaller devices.

Maximum Supply Voltage: 1.26 V

This low maximum supply voltage supports low-power applications, making it suitable for energy-efficient devices.

On Chip Data RAM Width: 8

A RAM width of 8 bits is optimized for compact data processing tasks, efficient for simple computational tasks.

Screening Level: AEC-Q100

The AEC-Q100 screening level indicates reliability for automotive applications, thus ensuring performance in critical environments.

Package Shape: SQUARE

The square package facilitates optimal layout arrangements on PCBs, enhancing design flexibility.

Bit Size: 32

A 32-bit architecture provides extensive computational ability for complex applications.

No. of Terminals: 292

A higher number of terminals allows for greater connectivity options and peripheral integration.

Package Style (Meter): GRID ARRAY, FINE PITCH

Fine pitch grid array packages support high-density designs, suitable for modern compact electronics.

Minimum Supply Voltage: 1.14 V

This low minimum supply voltage expands operational range and enhances energy efficiency in battery-powered applications.

Maximum Operating Temperature: 125 °C

The wide operating temperature range ensures reliability across a variety of harsh environments.

CPU Family: E200Z4

The E200Z4 CPU family offers optimized performance for real-time applications, making it versatile for various tasks.

Minimum Operating Temperature: -40 °C

Operating in extreme low temperatures is ideal for automotive and industrial applications.

ADC Channels: YES

The presence of ADC channels allows for analog signal processing, enhancing functionality in varied applications.

DMA Channels: YES

DMA channels enable efficient data transfers, freeing up the CPU for other tasks and improving performance.

Terminal Position: BOTTOM

Bottom terminal positioning is advantageous for pin access and enhances surface mounting capabilities.

ROM Words: 4194304

A large ROM capacity allows for extensive program storage, accommodating complex applications.

Maximum Seated Height: 1.8 mm

The low seated height aids in creating low-profile electronic devices.

Width: 17 mm

Compact width supports space-efficient designs in modern electronics.

Data EEPROM Size: 128K

The substantial EEPROM size facilitates ample non-volatile data storage, crucial for settings and configurations.

Boundary Scan: YES

Boundary scan capabilities enhance testing and debugging, significantly reducing development time.

Peripherals: DMA(64), RTC, TIMER(12), WDT(3)

A robust selection of peripherals permits diverse functional expansions, making this microcontroller versatile for many tasks.

Maximum Clock Frequency: 40 MHz

The 40 MHz clock frequency ensures quick processing, suitable for real-time applications.

Length: 17 mm

The compact length facilitates integration in space-constrained applications.

Peripheral IC Type: MICROCONTROLLER, RISC

The RISC architecture supports efficient instruction execution, enhancing performance in embedded systems.

No. of Timers: 12

Multiple timers enable precise control and timing functions, essential for real-time applications.

RAM Bytes: 393216

Ample RAM allows for complex computations and supports effective multitasking.

Technology: CMOS

CMOS technology provides low power consumption while ensuring high performance, ideal for battery-operated devices.

Terminal Form: BALL

Ball terminal form enhances soldering reliability, leading to sturdier device construction.

Analog To Digital Converters: 4-Ch 12-Bit, 1-Ch 10-Bit

Multiple ADC channels with high resolution allow for accurate analog signal processing needed for sensors and communication.

Maximum Supply Current: 50 mA

A maximum supply current of 50 mA allows for efficient power management, supporting long battery life in portable devices.

Nominal Supply Voltage: 1.2 V

The nominal supply voltage allows seamless operation in low voltage environments, aligning with modern power efficiency standards.

No. of DMA Channels: 64

A high number of DMA channels promotes efficient data handling and processing, making it suitable for applications requiring high data throughput.

No. of Serial I/Os: 18

Multiple serial I/Os support various interfaces for external connectivity, enhancing the controller's utility.

PWM Channels: YES

PWM capability is essential for controlling motors and other devices, making this microcontroller suitable for automation and robotics.

Connectivity: ETHERNET, I2C, SPI(8), UART(18)

Diverse connectivity options ensure compatibility with various networks and peripherals, enhancing integration capabilities.

ROM Programmability: FLASH

Flash ROM programmability allows for quick updates and field reprogramming, increasing flexibility in application development.

Terminal Pitch: 0.8 mm

0.8 mm pitch supports high-density PCB layouts, crucial for compact device designs.

Format: FLOATING POINT

Floating point support allows for complex mathematical computations, crucial in applications that require precise calculations.

Speed: 120 rpm

With a speed rating of 120 rpm, this microcontroller can handle different application requirements effectively.

Low Power Mode: YES

A low power mode extends battery life in applications where power consumption is critical.

On Chip Program ROM Width: 8

An 8-bit program ROM width is suitable for handling various simple computational tasks effectively within the microcontroller.

Technical Specifications

Microcontrollers SPC58EC80C3NEC1X attributes and parameters. Explore more Microcontrollers devices from STMicroelectronics

Specs

ADC Channels:

YES

Bit Size:

32

Boundary Scan:

YES

CPU Family:

E200Z4

Maximum Clock Frequency:

40 MHz

DAC Channels:

NO

DMA Channels:

YES

Format:

FLOATING POINT

Integrated Cache:

YES

JESD-30 Code:

S-PBGA-B292

Length:

17 mm

Low Power Mode:

YES

No. of DMA Channels:

64

No. of External Interrupts:

1

No. of Serial I/Os:

18

No. of Terminals:

292

No. of Timers:

12

On Chip Data RAM Width:

8

On Chip Program ROM Width:

8

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-40 Cel

PWM Channels:

YES

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

BGA292,20X20,32

Package Shape:

Package Style (Meter):

GRID ARRAY, FINE PITCH

RAM Bytes:

393216

ROM Words:

4194304

ROM Programmability:

FLASH

Screening Level:

AEC-Q100

Maximum Seated Height:

1.8 mm

Speed:

120 rpm

Maximum Supply Current:

50 mA

Maximum Supply Voltage:

1.26 V

Minimum Supply Voltage:

1.14 V

Nominal Supply Voltage:

1.2 V

Surface Mount:

YES

Technology:

CMOS

Terminal Form:

Terminal Pitch:

.8 mm

Terminal Position:

BOTTOM

Width:

17 mm

Peripheral IC Type:

Data EEPROM Size:

128K

Connectivity:

ETHERNET, I2C, SPI(8), UART(18)

Peripherals:

DMA(64), RTC, TIMER(12), WDT(3)

Analog To Digital Convertors:

4-Ch 12-Bit, 1-Ch 10-Bit

Trade Compliance

SPC58EC80C3NEC1X Peripheral ICs trade compliance attributes, and parameters.

ECCN

3A991.A.2

ECCN Governance

EAR

HTS

8542.31.00.01

SB

8542.31.00.00

PCN

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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