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SPC584B70E1EDC0X

STMicroelectronics

SPC584B70E1EDC0X by STMicroelectronics

SPC584B70E1EDC0X microcontroller by STMicroelectronics features a 32-bit E200Z4 CPU with a max clock frequency of 40 MHz, integrated cache, and AEC-Q100 screening. It operates b/w -40 °C to 105 °C, making it ideal for automotive applications. With 64 DMA channels and multiple connectivity options like CAN and Ethernet, it's perfect for advanced control systems.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 7,835 parts In-Stock

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Digiode

USA . 427 parts In-Stock

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427

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Anansix

USA . 217 parts In-Stock

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217

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Distributors (Availability)

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AZTECH Wire

Italy . 375 parts In-Stock

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$12.890

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375

$12.890

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IDEA Electronic Components Group

UK . 1,383 parts In-Stock

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$36.240

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$32.616

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1,383

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Microchip USA

USA . 2,379 parts In-Stock

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$40.517

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2,379

$40.517

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MKK Technologies

India . 1,966 parts In-Stock

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$68.146

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$68.146

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DigiPath Technology Company

USA . 1,966 parts In-Stock

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$68.146

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$68.146

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Component Stockers USA

USA . 513 parts In-Stock

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$194.280

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513

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Corphita

USA . 3,611 parts In-Stock

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Parana Technologies

USA . 782 parts In-Stock

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$43.330

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$43.330

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Overview

Unlock unparalleled performance with the SPC584B70E1EDC0X microcontroller from STMicroelectronics. Renowned for their commitment to quality and innovation, STMicroelectronics delivers a powerhouse designed for extreme environments, boasting a wide operational temperature range and advanced connectivity options. Perfect for automotive applications, this microcontroller ensures reliability while enhancing efficiency. Experience a seamless integration that elevates your projects, making them smarter and more responsive!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Durable body material ensures reliability in various environmental conditions.

Integrated Cache: YES

The presence of integrated cache improves processing speed and efficiency.

Surface Mount: YES

Surface mount technology allows for compact designs and easier integration into PCBs.

Maximum Supply Voltage: 1.26 V

Low maximum supply voltage minimizes power consumption, ideal for battery-powered applications.

On Chip Data RAM Width: 8

8-bit RAM width facilitates efficient data handling for various applications.

Screening Level: AEC-Q100

AEC-Q100 screening indicates suitability for automotive applications, ensuring high reliability.

Package Shape: SQUARE

Square package shape allows for better space utilization on circuit boards.

Bit Size: 32

32-bit architecture enables high-performance computing tasks and enhances processing power.

No. of Terminals: 64

A higher number of terminals allows for improved connectivity and interfacing with peripherals.

Package Style (Meter): FLATPACK, HEAT SINK/SLUG, THIN PROFILE, FINE PITCH

Thin profile and fine pitch design facilitates high-density mounting.

Minimum Supply Voltage: 1.14 V

Low minimum supply voltage supports low power applications, reducing overall energy usage.

Maximum Operating Temperature: 105 °C

High maximum operating temperature ensures reliable performance in demanding environments.

CPU Family: E200Z4

The E200Z4 CPU family offers advanced processing capabilities for a variety of applications.

Minimum Operating Temperature: -40 °C

Extensive temperature range makes this product suitable for harsh environments.

ADC Channels: YES

Integrated ADC channels enhance analog signal processing capabilities.

DMA Channels: YES

DMA support improves data handling efficiency, reducing CPU load during data transfers.

Terminal Position: QUAD

Quad terminal positioning provides excellent routing flexibility on PCBs.

ROM Words: 2,097,152

Large ROM capacity allows for storage of complex programs and applications.

Maximum Seated Height: 1.2 mm

Compact design enables space-saving in system design and integration.

Width: 10 mm

Small width allows for integration into space-constrained applications.

Data EEPROM Size: 64K

Adequate EEPROM size facilitates storage of essential configuration and calibration data.

Boundary Scan: YES

Boundary scan support eases testing and debugging of complex circuit layouts.

Peripherals: DMA(64), RTC, TIMER(8), WDT(2)

Rich peripheral set enhances functionality for various applications.

Maximum Clock Frequency: 40 MHz

High clock frequency enhances processing speed for computational tasks.

Length: 10 mm

Compact length enhances design flexibility and integration capability.

Peripheral IC Type: MICROCONTROLLER, RISC

RISC architecture optimizes performance and energy efficiency.

RAM Bytes: 131072

Sufficient RAM size supports complex computations and data processing.

Technology: CMOS

CMOS technology provides low power consumption and high noise immunity.

Terminal Form: GULL WING

Gull wing terminals facilitate reliable soldering and robust connections.

Analog To Digital Converters: 3-Ch 12-Bit, 1-Ch 10-Bit

Multiple high-resolution ADCs enable accurate signal conversion for analog data.

Maximum Supply Current: 55 mA

Reasonable supply current keeps power consumption manageable in system designs.

Nominal Supply Voltage: 1.2 V

Nominal supply voltage aligns with low-power applications to maximize efficiency.

No. of DMA Channels: 64

High number of DMA channels ensures flexible and efficient data transfer capabilities.

No. of Serial I/Os: 23

Ample serial I/O ports enable diverse connectivity options for various peripherals.

PWM Channels: YES

PWM capability supports motor control and other actuating functions.

Connectivity: CAN(8), DSPI(7), ETHERNET, I2C, LIN(14)

Versatile connectivity options facilitate integration into a wide range of systems.

ROM Programmability: FLASH

Flash programmability allows for easy updating of firmware and applications.

Terminal Pitch: 0.5 mm

Small terminal pitch supports high-density layouts while maintaining solderability.

Format: FLOATING POINT

Support for floating point arithmetic enhances performance in mathematical computations.

Speed: 120 rpm

Speed capabilities make this microcontroller appropriate for real-time control applications.

Low Power Mode: YES

Having a low power mode extends battery life significantly for portable applications.

On Chip Program ROM Width: 8

8-bit program ROM width allows efficient execution of instructions and optimizes memory usage.

Technical Specifications

Microcontrollers SPC584B70E1EDC0X attributes and parameters. Explore more Microcontrollers devices from STMicroelectronics

Specs

ADC Channels:

YES

Address Bus Width:

0

Bit Size:

32

Boundary Scan:

YES

CPU Family:

E200Z4

Maximum Clock Frequency:

40 MHz

DAC Channels:

NO

DMA Channels:

YES

External Data Bus Width:

0

Format:

FLOATING POINT

Integrated Cache:

YES

JESD-30 Code:

S-PQFP-G64

Length:

10 mm

Low Power Mode:

YES

No. of DMA Channels:

64

No. of Serial I/Os:

23

No. of Terminals:

64

No. of Timers:

1

On Chip Data RAM Width:

8

On Chip Program ROM Width:

8

Maximum Operating Temperature:

105 Cel

Minimum Operating Temperature:

-40 Cel

PWM Channels:

YES

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

HQFP64,.47SQ,20

Package Shape:

Package Style (Meter):

FLATPACK, HEAT SINK/SLUG, THIN PROFILE, FINE PITCH

Peak Reflow Temperature (C):

NOT SPECIFIED

RAM Bytes:

131072

ROM Words:

2097152

ROM Programmability:

FLASH

Screening Level:

AEC-Q100

Maximum Seated Height:

1.2 mm

Speed:

120 rpm

Maximum Supply Current:

55 mA

Maximum Supply Voltage:

1.26 V

Minimum Supply Voltage:

1.14 V

Nominal Supply Voltage:

1.2 V

Surface Mount:

YES

Technology:

CMOS

Terminal Form:

Terminal Pitch:

.5 mm

Terminal Position:

QUAD

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Width:

10 mm

Peripheral IC Type:

Data EEPROM Size:

64K

Connectivity:

CAN(8), DSPI(7), ETHERNET, I2C, LIN(14)

Peripherals:

DMA(64), RTC, TIMER(8), WDT(2)

Analog To Digital Convertors:

3-Ch 12-Bit, 1-Ch 10-Bit

Trade Compliance

SPC584B70E1EDC0X Peripheral ICs trade compliance attributes, and parameters.

ECCN

5A991.B.4.A

ECCN Governance

EAR

HTS

8542.31.00.01

SB

8542.31.00.00

PCN

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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