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L6388D013TR

STMicroelectronics

L6388D013TR by STMicroelectronics

L6388D013TR by STMicroelectronics is a high-side MOSFET gate driver with a max supply voltage of 17V and a nominal output peak current limit of 0.65A. It features fast turn-on (0.3µs) and turn-off (0.22µs) times, ideal for efficient power management in compact designs. Its small outline package ensures easy surface mounting in various applications.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 8,748 parts In-Stock

1+ parts

-

100+ parts

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8,748

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Digiode

USA . 3,490 parts In-Stock

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3,490

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Anansix

USA . 756 parts In-Stock

1+ parts

-

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756

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Microchip USA

USA . 165 parts In-Stock

1+ parts

$6.340

100+ parts

-

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-

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165

$6.340

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IDEA Electronic Components Group

UK . 446 parts In-Stock

1+ parts

$7.152

100+ parts

-

1k+ parts

$6.437

10k+ parts

-

446

$7.152

-

$6.437

-

AZTECH Wire

Italy . 733 parts In-Stock

1+ parts

$8.790

100+ parts

-

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-

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733

$8.790

-

-

-

MKK Technologies

India . 958 parts In-Stock

1+ parts

$13.449

100+ parts

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958

$13.449

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DigiPath Technology Company

USA . 958 parts In-Stock

1+ parts

$13.449

100+ parts

-

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958

$13.449

-

-

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Advanced Electronics

New Zealand . 2,000 parts In-Stock

1+ parts

$16.966

100+ parts

$15.439

1k+ parts

$13.912

10k+ parts

-

2,000

$16.966

$15.439

$13.912

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Component Stockers USA

USA . 551 parts In-Stock

1+ parts

$99.990

100+ parts

-

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551

$99.990

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A-Z Elektronik GmbH

Germany . 2,969 parts In-Stock

1+ parts

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2,969

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Corphita

USA . 2,469 parts In-Stock

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2,469

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Alle Elektronik GmbH

Germany . 1,979 parts In-Stock

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1,979

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Vigor

Singapore . 1,700 parts In-Stock

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1,700

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Parana Technologies

USA . 631 parts In-Stock

1+ parts

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$8.551

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631

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$8.551

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Kepictronics

USA . 455 parts In-Stock

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455

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Overview

Elevate your designs with the L6388D013TR from STMicroelectronics, a leading innovator in power management solutions. This robust MOSFET gate driver excels in efficiency and reliability, making it ideal for various applications, from motor control to renewable energy systems. With its superior performance and compact design, it significantly enhances your circuit's responsiveness and efficiency, delivering exceptional value that empowers your projects to thrive. Choose quality; choose STMicroelectronics.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy body material provides durability and resistance to environmental factors, making the product suitable for various applications.

Surface Mount: YES

The surface mount capability allows for easy integration into compact designs, optimizing space on the PCB.

Maximum Supply Voltage: 17 V

With a maximum supply voltage of 17 V, this driver can handle a wide range of applications, ensuring reliable operation in demanding environments.

Package Shape: RECTANGULAR

The rectangular package shape facilitates efficient layout and design in circuit boards, improving manufacturability and assembly.

Power Supplies (V): 15

A nominal supply voltage of 15 V enables compatibility with standard power supply circuits, making it easy to integrate into existing designs.

No. of Terminals: 8

The 8-terminal configuration provides ample connectivity options, allowing for flexible circuit design and compact integration.

Package Style (Meter): SMALL OUTLINE

The small outline package style contributes to reduced PCB footprint, making it ideal for space-constrained applications.

Terminal Finish: MATTE TIN/NICKEL PALLADIUM GOLD

The high-quality terminal finish enhances solderability and reliability of connections, ensuring better performance over time.

Terminal Position: DUAL

Dual terminal position allows for versatile circuit layout options, making it adaptable to various designs.

Maximum Seated Height: 1.75 mm

A low seated height is critical for applications requiring slim profiles, enabling designers to meet height restrictions.

Width: 3.9 mm

The 3.9 mm width supports compact PCB designs, contributing to optimized space usage in electronic devices.

High Side Driver: YES

Being a high-side driver enhances the control of high-side MOSFETs, making it suitable for applications requiring high-side switching.

Length: 4.9 mm

The compact length aids in high-density packing on PCBs, allowing for more components in limited space.

Technology: BCD

BCD technology combines high voltage and low power, maximizing efficiency and reliability in power management applications.

Terminal Form: GULL WING

The gull wing terminal form ensures easy inspections and soldering, enhancing manufacturing efficiency.

Nominal Supply Voltage: 15 V

Operating at a nominal supply voltage of 15 V ensures stable performance across a variety of load conditions.

Turn-on Time: 0.3 us

A fast turn-on time of 0.3 us contributes to swift switching operations, enhancing overall circuit performance.

Terminal Pitch: 1.27 mm

The 1.27 mm terminal pitch is standard in many designs, making it easier to integrate with widespread PCB layouts.

Nominal Output Peak Current Limit: 0.65 A

The nominal output peak current limit of 0.65 A supports driving larger MOSFETs effectively, enhancing versatility in applications.

Interface IC Type: HALF BRIDGE BASED MOSFET DRIVER

The half bridge configuration allows for driving both high and low side MOSFETs, offering flexibility in power management designs.

Turn-off Time: 0.22 us

A rapid turn-off time of 0.22 us improves response times in switching applications, enhancing efficiency and performance.

Technical Specifications

MOSFET Gate Drivers L6388D013TR attributes and parameters. Explore more MOSFET Gate Drivers devices from STMicroelectronics

Specs

High Side Driver:

YES

Interface IC Type:

JESD-30 Code:

R-PDSO-G8

JESD-609 Code:

e3/e4

Length:

4.9 mm

No. of Functions:

1

No. of Terminals:

8

Nominal Output Peak Current Limit:

.65 A

Package Body Material:

PLASTIC/EPOXY

Package Code:

SOP

Package Equivalence Code:

SOP8,.25

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Power Supplies (V):

15

Qualification:

Not Qualified

Maximum Seated Height:

1.75 mm

Sub-Category:

MOSFET Drivers

Maximum Supply Voltage:

17 V

Nominal Supply Voltage:

15 V

Surface Mount:

YES

Technology:

BCD

Terminal Finish:

MATTE TIN/NICKEL PALLADIUM GOLD

Terminal Form:

Terminal Pitch:

1.27 mm

Terminal Position:

DUAL

Turn-off Time:

.22 us

Turn-on Time:

.3 us

Width:

3.9 mm

Trade Compliance

L6388D013TR Interface ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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