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L6387D

STMicroelectronics

L6387D by STMicroelectronics

L6387D by STMicroelectronics is a high-side MOSFET driver with a max supply voltage of 17V and nominal output peak current limit of 0.65A. It features an 8-terminal gull-wing package, ideal for compact applications. This BCDMOS technology driver excels in half-bridge configurations.

Median Price

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Lifecycle Status

Suppliers In-Stock

9

In-Stock Inventory

1k+

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Chip Stock

USA . 10,855 parts In-Stock

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Vyrian

USA . 7,783 parts In-Stock

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Digiode

USA . 3,335 parts In-Stock

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3,335

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Anansix

USA . 2,740 parts In-Stock

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2,740

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ComSIT Distribution GmbH

Germany . 59 parts In-Stock

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59

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Bristol Electronics

USA . 50 parts In-Stock

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50

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R&J Components

USA . 48 parts In-Stock

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48

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Component Electronics Inc.

Canada . 25 parts In-Stock

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25

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Prism Electronics

USA . 6 parts In-Stock

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Distributors (Availability)

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IDEA Electronic Components Group

UK . 659 parts In-Stock

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$3.249

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$2.924

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659

$3.249

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$2.924

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MKK Technologies

India . 1,665 parts In-Stock

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$6.109

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$6.109

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DigiPath Technology Company

USA . 1,665 parts In-Stock

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$6.109

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AZTECH Wire

Italy . 211 parts In-Stock

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$8.060

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Authorized Procurement Solutions

USA . 25,000 parts In-Stock

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A-Z Elektronik GmbH

Germany . 6,387 parts In-Stock

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Kepictronics

USA . 4,355 parts In-Stock

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Alle Elektronik GmbH

Germany . 4,258 parts In-Stock

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Microchip USA

USA . 4,170 parts In-Stock

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Corphita

USA . 2,710 parts In-Stock

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Vigor

Singapore . 2,500 parts In-Stock

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Parana Technologies

USA . 1,760 parts In-Stock

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$3.884

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Perfect Parts

USA . 66 parts In-Stock

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Overview

Unlock the full potential of your designs with the L6387D from STMicroelectronics—a leader in innovative semiconductor solutions. This high-performance MOSFET gate driver ensures reliability and efficiency in various applications, from power management to motor control. With its robust construction and advanced BCDMOS technology, you can trust in superior performance, reduced energy consumption, and seamless integration into your projects, delivering unmatched value and quality every time.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy body material ensures durability and protection against environmental factors, making it reliable for various applications.

Surface Mount: YES

Surface mount technology allows for a compact design, enabling easy integration into modern electronic devices with limited space.

Maximum Supply Voltage: 17 V

A maximum supply voltage of 17 V provides flexibility in a variety of applications while maintaining safe operation within specified limits.

Package Shape: RECTANGULAR

The rectangular package shape optimizes space utilization on the PCB, facilitating efficient layout and organization.

Power Supplies (V): 15

Designed for a nominal power supply of 15 V, it delivers reliable performance across numerous applications requiring stable voltage.

No. of Terminals: 8

With 8 terminals, this driver supports multiple connections, enhancing its versatility in circuit designs.

Package Style (Meter): SMALL OUTLINE

The small outline package style promotes space-saving designs in densely populated circuit boards, improving overall efficiency.

Terminal Finish: NICKEL PALLADIUM GOLD

The high-quality terminal finish of nickel palladium gold ensures excellent conductivity and resistance to corrosion, enhancing reliability.

Terminal Position: DUAL

The dual terminal position can simplify PCB layout and optimize routing in complex electronic systems.

Maximum Seated Height: 1.75 mm

A maximum seated height of 1.75 mm ensures compatibility with low-profile designs, accommodating compact device requirements.

Width: 3.9 mm

At just 3.9 mm in width, this driver contributes to reducing the overall footprint of the circuit design, making it ideal for space-constrained applications.

High Side Driver: YES

Being a high side driver allows for efficient control of high-power devices, enhancing performance in applications such as motor control.

Length: 4.9 mm

The compact length of 4.9 mm facilitates the integration of the driver in space-limited circuits while maintaining performance.

Technology: BCDMOS

Utilizing BCDMOS technology optimizes performance and enhances efficiency, making it suitable for high-speed switching applications.

Terminal Form: GULL WING

Gull wing terminals are ideal for automated soldering processes, ensuring strong connections and reducing assembly time and cost.

Nominal Supply Voltage: 15 V

A nominal supply voltage of 15 V offers ideal performance levels for driving MOSFETs in a variety of circuits.

Terminal Pitch: 1.27 mm

The 1.27 mm terminal pitch makes it suitable for high-density applications while ensuring compatibility with standard PCB layouts.

Nominal Output Peak Current Limit: 0.65 A

The 0.65 A output peak current limit provides adequate power handling for many driving applications, ensuring reliable operation.

Interface IC Type: HALF BRIDGE BASED MOSFET DRIVER

As a half bridge based MOSFET driver, it enables efficient control of both high-side and low-side switches, optimizing power conversion in circuits.

Technical Specifications

MOSFET Gate Drivers L6387D attributes and parameters. Explore more MOSFET Gate Drivers devices from STMicroelectronics

Specs

High Side Driver:

YES

Interface IC Type:

JESD-30 Code:

R-PDSO-G8

JESD-609 Code:

e4

Length:

4.9 mm

Moisture Sensitivity Level (MSL):

1

No. of Functions:

1

No. of Terminals:

8

Nominal Output Peak Current Limit:

.65 A

Package Body Material:

PLASTIC/EPOXY

Package Code:

SOP

Package Equivalence Code:

SOP8,.25

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Power Supplies (V):

15

Qualification:

Not Qualified

Maximum Seated Height:

1.75 mm

Sub-Category:

MOSFET Drivers

Maximum Supply Voltage:

17 V

Nominal Supply Voltage:

15 V

Surface Mount:

YES

Technology:

BCDMOS

Terminal Finish:

NICKEL PALLADIUM GOLD

Terminal Form:

Terminal Pitch:

1.27 mm

Terminal Position:

DUAL

Width:

3.9 mm

Trade Compliance

L6387D Interface ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

NSN

5962-01-626-0815, 5962016260815

NIIN

016260815

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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