Loading...

L6386E

STMicroelectronics

L6386E by STMicroelectronics

L6386E by STMicroelectronics is a high-side MOSFET gate driver with a max supply voltage of 17V and a nominal output peak current limit of 0.65A. It features fast turn-on and turn-off times of 0.15µs, making it ideal for efficient power management in half-bridge applications. Its compact design includes a dual terminal configuration in an in-line package, ensuring versatility in various electronic circuits.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 9,087 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

9,087

-

-

-

-

Digiode

USA . 1,414 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

1,414

-

-

-

-

Anansix

USA . 515 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

515

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Microchip USA

USA . 279 parts In-Stock

1+ parts

$7.738

100+ parts

-

1k+ parts

-

10k+ parts

-

279

$7.738

-

-

-

IDEA Electronic Components Group

UK . 2,325 parts In-Stock

1+ parts

$10.255

100+ parts

-

1k+ parts

$9.230

10k+ parts

-

2,325

$10.255

-

$9.230

-

AZTECH Wire

Italy . 564 parts In-Stock

1+ parts

$11.050

100+ parts

-

1k+ parts

-

10k+ parts

-

564

$11.050

-

-

-

MKK Technologies

India . 144 parts In-Stock

1+ parts

$19.284

100+ parts

-

1k+ parts

-

10k+ parts

-

144

$19.284

-

-

-

DigiPath Technology Company

USA . 144 parts In-Stock

1+ parts

$19.284

100+ parts

-

1k+ parts

-

10k+ parts

-

144

$19.284

-

-

-

Vigor

Singapore . 10,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

10,000

-

-

-

-

Parana Technologies

USA . 2,272 parts In-Stock

1+ parts

-

100+ parts

$12.262

1k+ parts

-

10k+ parts

-

2,272

-

$12.262

-

-

Kepictronics

USA . 2,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

2,000

-

-

-

-

Corphita

USA . 1,166 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

1,166

-

-

-

-

Perfect Parts

USA . 1,084 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

1,084

-

-

-

-

Overview

Unlock unparalleled performance with the L6386E MOSFET Gate Driver from STMicroelectronics. Renowned for their innovation and reliability, STMicroelectronics delivers a powerhouse that ensures rapid switching times and robust thermal management, perfect for demanding applications in automotive, industrial, and consumer electronics. Elevate your designs with unmatched efficiency and precision, enhancing both product longevity and customer satisfaction. Choose the L6386E for quality you can trust!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of durable plastic/epoxy material enhances the reliability and longevity of the product in various environmental conditions.

Maximum Supply Voltage: 17 V

This specification allows the driver to handle a wide range of applications without the risk of damage due to overvoltage.

Package Shape: RECTANGULAR

The rectangular shape is space-efficient and facilitates easy placement on PCBs, allowing for flexible design options.

Power Supplies (V): 15

A nominal supply voltage of 15V ensures optimal performance in standard applications, making it easy to integrate into existing systems.

No. of Terminals: 14

The 14-terminal configuration provides multiple connection options and functionality, ensuring versatility in circuit design.

Package Style (Meter): IN-LINE

The in-line package style simplifies assembly and enhances reliability in automated manufacturing processes.

Terminal Position: DUAL

Dual terminal positioning supports a variety of configurations and enhances layout flexibility on PCBs.

Maximum Seated Height: 5.1 mm

A low seated height ensures compatibility with compact designs, making it suitable for space-constrained applications.

Width: 7.62 mm

The compact width allows for more efficient use of space on PCBs, which is crucial in high-density designs.

High Side Driver: YES

Being a high side driver enables direct control of high-side MOSFETs, improving overall performance in power management applications.

Technology: BCD

BCD technology provides a combination of high-performance and low power consumption, making it ideal for modern applications.

Terminal Form: THROUGH-HOLE

Through-hole terminals provide robust mechanical support and are easier to handle during assembly, ensuring durability.

Nominal Supply Voltage: 15 V

The nominal supply voltage of 15V facilitates easy interfacing with typical logic levels, simplifying system design.

Turn-on Time: 0.15 us

A fast turn-on time enables rapid switching speeds, making this product ideal for high-frequency applications.

Terminal Pitch: 2.54 mm

A terminal pitch of 2.54 mm ensures compatibility with standard PCB layouts, facilitating easier integration into existing designs.

Nominal Output Peak Current Limit: 0.65 A

This output current limit allows for control of substantial loads, making it suitable for various high-power applications.

Interface IC Type: HALF BRIDGE BASED MOSFET DRIVER

Being a half bridge driver optimizes the control of power devices, making it more efficient for driving motors and other heavy loads.

Turn-off Time: 0.15 us

A quick turn-off time reduces switching losses, enhancing overall system efficiency in demanding applications.

Technical Specifications

MOSFET Gate Drivers L6386E attributes and parameters. Explore more MOSFET Gate Drivers devices from STMicroelectronics

Specs

High Side Driver:

YES

Interface IC Type:

JESD-30 Code:

R-PDIP-T14

No. of Functions:

1

No. of Terminals:

14

Nominal Output Peak Current Limit:

.65 A

Package Body Material:

PLASTIC/EPOXY

Package Code:

DIP

Package Equivalence Code:

DIP14,.3

Package Shape:

Package Style (Meter):

IN-LINE

Peak Reflow Temperature (C):

NOT SPECIFIED

Power Supplies (V):

15

Qualification:

Not Qualified

Maximum Seated Height:

5.1 mm

Sub-Category:

MOSFET Drivers

Maximum Supply Voltage:

17 V

Nominal Supply Voltage:

15 V

Surface Mount:

NO

Technology:

BCD

Terminal Form:

Terminal Pitch:

2.54 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Turn-off Time:

.15 us

Turn-on Time:

.15 us

Width:

7.62 mm

Trade Compliance

L6386E Interface ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

Category top products 20

Authentic purchasing experiences

Partstack™ will investigate all reported instances of potential suspect/counterfeit part listings.

Similar products 20