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L6386D013TR

STMicroelectronics

L6386D013TR by STMicroelectronics

L6386D013TR by STMicroelectronics is a high-side MOSFET gate driver with a max supply voltage of 17V and a nominal output peak current limit of 0.65A. It features fast turn-on and turn-off times of just 0.015µs, ideal for efficient power management in compact designs. Packaged in a small outline with gull-wing terminals, it suits various applications including motor control and DC-DC converters.

Median Price

-

Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 5,583 parts In-Stock

1+ parts

-

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5,583

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LIBRA Elektronik GmbH

Germany . 2,500 parts In-Stock

1+ parts

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2,500

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-

-

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Digiode

USA . 1,640 parts In-Stock

1+ parts

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1,640

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Anansix

USA . 573 parts In-Stock

1+ parts

-

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573

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Microchip USA

USA . 126 parts In-Stock

1+ parts

$4.117

100+ parts

-

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126

$4.117

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IDEA Electronic Components Group

UK . 558 parts In-Stock

1+ parts

$10.088

100+ parts

-

1k+ parts

$9.079

10k+ parts

-

558

$10.088

-

$9.079

-

AZTECH Wire

Italy . 689 parts In-Stock

1+ parts

$18.350

100+ parts

-

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689

$18.350

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MKK Technologies

India . 1,820 parts In-Stock

1+ parts

$18.969

100+ parts

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1,820

$18.969

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DigiPath Technology Company

USA . 1,820 parts In-Stock

1+ parts

$18.969

100+ parts

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1,820

$18.969

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Component Stockers USA

USA . 556 parts In-Stock

1+ parts

$99.990

100+ parts

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556

$99.990

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Corphita

USA . 3,292 parts In-Stock

1+ parts

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3,292

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A-Z Elektronik GmbH

Germany . 2,607 parts In-Stock

1+ parts

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2,607

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Parana Technologies

USA . 2,348 parts In-Stock

1+ parts

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100+ parts

$12.062

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2,348

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$12.062

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Vigor

Singapore . 1,989 parts In-Stock

1+ parts

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1,989

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Alle Elektronik GmbH

Germany . 1,738 parts In-Stock

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1,738

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Overview

Unlock the power of precision with the L6386D013TR from STMicroelectronics, a leader in innovative semiconductor solutions. This robust MOSFET gate driver ensures superior performance for high-side applications, delivering quick turn-on and turn-off times that enhance efficiency in your designs. With impeccable reliability and a compact footprint, it’s perfect for automotive, industrial, and consumer electronics, offering unmatched value and peace of mind for your projects. Elevate your applications with ST's commitment to quality!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy enhances durability and protects the internal components from environmental factors.

Surface Mount: YES

Surface mount technology allows for compact designs and simplifies the assembly process, making it ideal for modern applications.

Maximum Supply Voltage: 17 V

A maximum supply voltage of 17 V provides flexibility for various applications while ensuring safe operational limits.

Package Shape: RECTANGULAR

The rectangular shape optimizes space utilization on PCBs and can aid in efficient heat dissipation.

No. of Terminals: 14

With 14 terminals, this MOSFET driver allows for versatile configurations and connection options in circuit designs.

Package Style (Meter): SMALL OUTLINE

The small outline package style minimizes the footprint on the PCB, allowing for more compact circuit designs.

Terminal Finish: NICKEL PALLADIUM GOLD

The nickel-palladium-gold finish ensures excellent solderability and enhances corrosion resistance for reliable connections.

Terminal Position: DUAL

Dual terminal positions can facilitate easier routing and layout designs on the PCB, enhancing overall performance.

Maximum Seated Height: 1.75 mm

A low seated height allows for a slim design, making the device suitable for applications with height constraints.

Width: 3.9 mm

A narrow width supports high-density mounting in compact electronic devices, maximizing space efficiency.

High Side Driver: YES

Being a high side driver enables effective control of load management in various applications, enhancing operational efficiency.

Maximum Time At Peak Reflow Temperature (s): 40

This specification ensures that the driver can withstand the reflow process during assembly, ensuring manufacturing reliability.

Peak Reflow Temperature °C: 260

A peak reflow temperature of 260 °C allows for compatibility with advanced soldering processes, ensuring robustness.

Length: 8.65 mm

This length contributes to its compact design, making it suitable for space-constrained applications.

Terminal Form: GULL WING

Gull wing terminals provide excellent solder joint reliability and are easy to inspect during assembly.

Nominal Supply Voltage: 15 V

A nominal supply voltage of 15 V balances performance and efficiency, suitable for a wide range of applications.

Turn-on Time: 0.015 us

Fast turn-on times ensure rapid switching capabilities, critical for high-frequency applications.

Terminal Pitch: 1.27 mm

A terminal pitch of 1.27 mm allows for easier PCB layout while maintaining a compact form factor.

Nominal Output Peak Current Limit: 0.65 A

This output current limit supports driving larger loads while protecting the device from excessive current.

Interface IC Type: HALF BRIDGE BASED MOSFET DRIVER

Half bridge configuration allows for effective control of power MOSFETs, increasing system efficiency and performance.

Turn-off Time: 0.015 us

Quick turn-off times contribute to reduced switching losses, making this driver suitable for high-efficiency applications.

Technical Specifications

MOSFET Gate Drivers L6386D013TR attributes and parameters. Explore more MOSFET Gate Drivers devices from STMicroelectronics

Specs

High Side Driver:

YES

Interface IC Type:

JESD-30 Code:

R-PDSO-G14

JESD-609 Code:

e4

Length:

8.65 mm

Moisture Sensitivity Level (MSL):

1

No. of Functions:

1

No. of Terminals:

14

Nominal Output Peak Current Limit:

.65 A

Package Body Material:

PLASTIC/EPOXY

Package Code:

SOP

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Qualification:

Not Qualified

Maximum Seated Height:

1.75 mm

Maximum Supply Voltage:

17 V

Nominal Supply Voltage:

15 V

Surface Mount:

YES

Terminal Finish:

NICKEL PALLADIUM GOLD

Terminal Form:

Terminal Pitch:

1.27 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

40

Turn-off Time:

.015 us

Turn-on Time:

.015 us

Width:

3.9 mm

Trade Compliance

L6386D013TR Interface ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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