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L6385D013TR

STMicroelectronics

L6385D013TR by STMicroelectronics

L6385D013TR by STMicroelectronics is a high-side MOSFET driver with a max supply voltage of 17V and operates in extreme temps from -40 °C to 125°C. It features fast turn-on (0.11µs) and turn-off (0.105µs) times, ideal for automotive applications. Its compact SO8 package ensures efficient surface mounting.

Median Price

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Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 8,182 parts In-Stock

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8,182

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A2Z Electronics, Inc.

USA . 2,490 parts In-Stock

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2,490

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Anansix

USA . 1,348 parts In-Stock

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1,348

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Digiode

USA . 309 parts In-Stock

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309

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IDEA Electronic Components Group

UK . 944 parts In-Stock

1+ parts

$4.526

100+ parts

-

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$4.074

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944

$4.526

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$4.074

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Microchip USA

USA . 181 parts In-Stock

1+ parts

$5.239

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-

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181

$5.239

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MKK Technologies

India . 259 parts In-Stock

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$8.512

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259

$8.512

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DigiPath Technology Company

USA . 259 parts In-Stock

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$8.512

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259

$8.512

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AZTECH Wire

Italy . 1,034 parts In-Stock

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$14.110

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1,034

$14.110

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Ampacity Inc.

Singapore . 768 parts In-Stock

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$36.500

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768

$36.500

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Kepictronics

USA . 10,500 parts In-Stock

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10,500

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A-Z Elektronik GmbH

Germany . 8,600 parts In-Stock

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Alle Elektronik GmbH

Germany . 5,733 parts In-Stock

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Assy Fe

Spain . 2,634 parts In-Stock

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Vigor

Singapore . 2,500 parts In-Stock

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2,500

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Parana Technologies

USA . 1,526 parts In-Stock

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$5.412

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1,526

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$5.412

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Corphita

USA . 1,393 parts In-Stock

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1,393

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Perfect Parts

USA . 532 parts In-Stock

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532

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GreenTree Electronics

Israel . 475 parts In-Stock

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475

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Overview

Elevate your designs with the L6385D013TR from STMicroelectronics, a leader in innovative semiconductor solutions. This cutting-edge MOSFET gate driver ensures reliability and performance across automotive and industrial applications. With its compact design and robust temperature range, you gain efficiency without compromising quality. Trust in STMicroelectronics’ legacy of excellence to enhance your projects with speed and precision, delivering unmatched value every time.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material ensures durability and protection against environmental factors, making it suitable for various applications.

Surface Mount: YES

Surface mount technology allows for compact design and efficient use of space on PCBs, which is crucial for modern electronic devices.

Maximum Supply Voltage: 17 V

A maximum supply voltage of 17 V provides flexibility in diverse application scenarios, accommodating different power supply requirements.

Package Shape: RECTANGULAR

The rectangular package shape is optimized for layout and space efficiency on circuit boards, facilitating easier integration.

No. of Terminals: 8

Having 8 terminals enables versatile connectivity options for driving configuration and control, enhancing design flexibility.

Package Style (Meter): SMALL OUTLINE

Small outline packaging ensures that the component can fit into space-constrained applications, ideal for compact electronic designs.

Maximum Operating Temperature: 125 °C

With a maximum operating temperature of 125 °C, this driver is suitable for high-temperature environments, enhancing reliability under stress.

Minimum Operating Temperature: -40 °C

The ability to operate as low as -40 °C makes it suitable for extreme temperature applications, enhancing its versatility.

Terminal Finish: NICKEL PALLADIUM GOLD

Nickel palladium gold plating offers excellent corrosion resistance and improves solderability, ensuring long-term reliability in connections.

Terminal Position: DUAL

Dual terminal positioning allows for enhanced routing options on PCBs, offering flexibility in layout design.

Maximum Seated Height: 1.75 mm

A low maximum seated height contributes to a compact design, making it ideal for low-profile applications.

Width: 3.9 mm

A width of 3.9 mm allows for efficient use of space, making this driver suitable for miniaturized electronic devices.

High Side Driver: YES

As a high side driver, this product can effectively control power loads, making it suitable for various high-side switching applications.

Maximum Time At Peak Reflow Temperature (s): 40

A maximum exposure time of 40 seconds at peak reflow temperature enables robust solder joint formation, ensuring reliable assembly.

Peak Reflow Temperature °C: 260

A peak reflow temperature of 260 °C is compatible with most soldering processes, ensuring compatibility with standard assembly technologies.

Length: 4.9 mm

The compact length of 4.9 mm allows for the development of small, efficient electronic circuits.

Temperature Grade: AUTOMOTIVE

Designed for automotive applications, this driver meets stringent temperature and reliability requirements for critical automotive systems.

Technology: BCD

BCD technology enables efficient power management and improved performance, making it suitable for modern energy-sensitive applications.

Terminal Form: GULL WING

Gull wing terminals provide excellent mechanical strength and reliable soldering, ensuring robust connection on the PCB.

Nominal Supply Voltage: 15 V

A nominal supply voltage of 15 V ensures effective operation across a range of common electronic applications.

Turn-on Time: 0.11 us

A fast turn-on time of 0.11 µs ensures rapid switching, which is critical for high-frequency applications.

Terminal Pitch: 1.27 mm

A terminal pitch of 1.27 mm allows for ease of hand-soldering and supports automated assembly processes.

Nominal Output Peak Current Limit: 0.65 A

A nominal output peak current limit of 0.65 A offers reliable performance in driving loads, ensuring adequate power delivery.

Interface IC Type: HALF BRIDGE BASED MOSFET DRIVER

The half bridge configuration allows for efficient control of power MOSFETs, making it ideal for inverter and motor control applications.

Turn-off Time: 0.105 us

A fast turn-off time of 0.105 µs facilitates high-speed operation, which is essential for switching applications requiring rapid transitions.

Technical Specifications

MOSFET Gate Drivers L6385D013TR attributes and parameters. Explore more MOSFET Gate Drivers devices from STMicroelectronics

Specs

High Side Driver:

YES

Interface IC Type:

JESD-30 Code:

R-PDSO-G8

JESD-609 Code:

e4

Length:

4.9 mm

Moisture Sensitivity Level (MSL):

1

No. of Functions:

1

No. of Terminals:

8

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-40 Cel

Nominal Output Peak Current Limit:

.65 A

Package Body Material:

PLASTIC/EPOXY

Package Code:

SOP

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Qualification:

Not Qualified

Maximum Seated Height:

1.75 mm

Maximum Supply Voltage:

17 V

Nominal Supply Voltage:

15 V

Surface Mount:

YES

Technology:

BCD

Temperature Grade:

Terminal Finish:

NICKEL PALLADIUM GOLD

Terminal Form:

Terminal Pitch:

1.27 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

40

Turn-off Time:

.105 us

Turn-on Time:

.11 us

Width:

3.9 mm

Trade Compliance

L6385D013TR Interface ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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