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JANSR2ST3360KG

STMicroelectronics

JANSR2ST3360KG by STMicroelectronics

JANSR2ST3360KG by STMicroelectronics is a versatile NPN/PNP BJT designed for amplifier applications. It features a max VCEsat of 0.38V, power dissipation of 7W, and operates b/w -65 °C to 200 °C. Ideal for high-reliability environments with MIL-19500 standards.

Median Price

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Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 4,979 parts In-Stock

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4,979

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Vyrian

USA . 4,778 parts In-Stock

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4,778

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Anansix

USA . 2,827 parts In-Stock

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2,827

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Distributors (Availability)

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IDEA Electronic Components Group

UK . 680 parts In-Stock

1+ parts

$1.190

100+ parts

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$1.071

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680

$1.190

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$1.071

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MKK Technologies

India . 1,935 parts In-Stock

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$2.239

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$2.239

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DigiPath Technology Company

USA . 1,935 parts In-Stock

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$2.239

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1,935

$2.239

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Corphita

USA . 2,988 parts In-Stock

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2,988

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Parana Technologies

USA . 1,163 parts In-Stock

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$1.423

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$1.423

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Overview

Unlock the power of precision with the JANSR2ST3360KG from STMicroelectronics, a leader in cutting-edge technology. This high-quality Power BJT excels in amplifier applications, delivering exceptional performance and reliability even in extreme conditions. With a robust ceramic, metal-sealed package, it ensures durability while providing superior thermal management. Choose JANSR2ST3360KG for unmatched efficiency and performance—empowering your designs to reach new heights!

Feature Benefit Bullets

Package Body Material: CERAMIC, METAL-SEALED COFIRED

This robust material ensures high durability and reliability, making the product suitable for harsh environments.

Polarity or Channel Type: NPN AND PNP

The availability of both NPN and PNP configurations provides versatility in design applications, accommodating a wide range of electronic circuits.

Configuration: SEPARATE, 2 ELEMENTS

The separate configuration allows for increased design flexibility, enabling optimized performance for specific applications.

Transistor Application: AMPLIFIER

Designed specifically for amplification, this transistor delivers superior signal processing performance ideal for audio and radio frequency applications.

Surface Mount: YES

Surface mount capability allows for automatic assembly, reducing production costs and improving manufacturing efficiency.

Maximum VCEsat: 0.38 V

A low VCEsat leads to improved efficiency in power applications, maximizing output power and reducing thermal stress.

Package Shape: RECTANGULAR

The rectangular package shape aids in standardized PCB layouts, facilitating easier integration into various designs.

Terminal Form: FLAT

Flat terminals provide ease of soldering and efficient heat dissipation, enhancing reliability in electronic applications.

No. of Elements: 2

With two elements, this product offers enhanced performance while reducing the space required on the PCB.

No. of Terminals: 8

The eight terminals provide multiple connection options, allowing for versatile configurations in circuit designs.

Maximum Power Dissipation (Abs): 7 W

High power dissipation capability allows for effective thermal management, ensuring reliable operation under high-load conditions.

Package Style (Meter): FLATPACK

The flatpack style enhances space efficiency on PCBs, making it easier to fit into compact designs.

Maximum Power Dissipation Ambient: 1.4 W

A specified ambient power dissipation ensures reliable operation in various environmental conditions.

Minimum DC Current Gain (hFE): 160

This high current gain indicates efficient amplification capabilities, providing enhanced performance in amplifier circuits.

Maximum Operating Temperature: 200 °C

This high maximum temperature tolerance enables operation in extreme conditions, increasing the reliability of the device.

Maximum Collector-Base Capacitance: 45 pF

Low capacitance levels ensure faster switching and minimized signal distortion, enhancing overall performance in high-frequency applications.

Maximum Collector-Emitter Voltage: 60 V

A high maximum voltage rating allows for flexibility in design, accommodating a variety of high-voltage applications.

Transistor Element Material: SILICON

Silicon material provides excellent performance characteristics including high reliability, efficient heat dissipation, and robust thermal stability.

Maximum Turn On Time (ton): 175 ns

A fast turn-on time contributes to improved response in switching applications, allowing for quicker circuit operation.

Minimum Operating Temperature: -65 °C

This low-temperature performance allows for operation in extreme cold environments, ensuring versatility across various applications.

Maximum Collector Current (IC): 0.8 A

A high collector current capability facilitates the driving of larger loads, making it suitable for a range of power applications.

Maximum Turn Off Time (toff): 2500 ns

The extended turn-off time supports high-frequency applications, enhancing the overall switching performance in circuit designs.

Terminal Position: DUAL

Dual terminal position simplifies layout designs and connectivity, aligning with various electronic design requirements.

Reference Standard: MIL-19500; RH - 100K Rad(Si)

Compliance with military standards ensures superior reliability and performance in critical applications, particularly in high-radiation environments.

Technical Specifications

Power Bipolar Junction Transistors (BJT) JANSR2ST3360KG attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from STMicroelectronics

Specs

Additional Features:

HIGH RELIABILITY

Maximum Collector Current (IC):

Maximum Collector-Base Capacitance:

45 pF

Maximum Collector-Emitter Voltage:

60 V

Configuration:

Minimum DC Current Gain (hFE):

160

JESD-30 Code:

R-CDFP-F8

No. of Elements:

2

No. of Terminals:

8

Maximum Operating Temperature:

200 Cel

Minimum Operating Temperature:

-65 Cel

Package Body Material:

CERAMIC, METAL-SEALED COFIRED

Package Shape:

RECTANGULAR

Package Style (Meter):

FLATPACK

Polarity or Channel Type:

Maximum Power Dissipation Ambient:

1.4 W

Maximum Power Dissipation (Abs):

7 W

Qualification:

Not Qualified

Reference Standard:

MIL-19500; RH - 100K Rad(Si)

Surface Mount:

YES

Terminal Form:

FLAT

Terminal Position:

DUAL

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Maximum Turn Off Time (toff):

2500 ns

Maximum Turn On Time (ton):

175 ns

Maximum VCEsat:

.38 V

Trade Compliance

JANSR2ST3360KG Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

Category top products 20

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