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JANSR2ST3360KT

STMicroelectronics

JANSR2ST3360KT by STMicroelectronics

JANSR2ST3360KT by STMicroelectronics is a versatile NPN/PNP BJT designed for amplifier applications. It features a max VCEsat of 0.38V, power dissipation of 7W, and operates b/w -65 °C to 200 °C. Ideal for high-performance circuits in harsh environments.

Median Price

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Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

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Vyrian

USA . 4,096 parts In-Stock

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4,096

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Digiode

USA . 3,190 parts In-Stock

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Anansix

USA . 1,481 parts In-Stock

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1,481

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Distributors (Availability)

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IDEA Electronic Components Group

UK . 936 parts In-Stock

1+ parts

$1.206

100+ parts

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$1.086

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936

$1.206

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$1.086

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MKK Technologies

India . 1,989 parts In-Stock

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$2.268

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1,989

$2.268

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DigiPath Technology Company

USA . 1,989 parts In-Stock

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$2.268

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1,989

$2.268

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Component Stockers USA

USA . 556 parts In-Stock

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$99.990

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556

$99.990

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Corphita

USA . 4,559 parts In-Stock

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Parana Technologies

USA . 1,412 parts In-Stock

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$1.442

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Overview

Elevate your design with the JANSR2ST3360KT from STMicroelectronics, a powerhouse in the semiconductor industry known for exceptional reliability and innovation. This versatile NPN/PNP bipolar junction transistor excels in amplifier applications, offering high efficiency and robust performance even in extreme conditions. Crafted with precision, its ceramic metal-sealed package ensures durability while delivering optimized power management, making it the ideal choice for aerospace, military, and industrial applications. Experience the advantage of superior quality and design flexibility that only STMicroelectronics can provide!

Feature Benefit Bullets

Package Body Material: CERAMIC, METAL-SEALED COFIRED

The ceramic and metal-sealed construction provides enhanced durability and heat resistance, making it suitable for high-reliability applications.

Polarity or Channel Type: NPN AND PNP

Support for both NPN and PNP configurations allows versatile applications in amplifier designs, ensuring flexibility in circuit design.

Configuration: SEPARATE, 2 ELEMENTS

Having separate elements allows for improved performance and reliability in amplification, as each transistor can be optimized independently.

Transistor Application: AMPLIFIER

Designed specifically for amplification tasks ensures effective signal boosting, making it suitable for audio and radio frequency applications.

Surface Mount: YES

The surface mount capability enables compact designs and efficient automated assembly, reducing overall system size.

Maximum VCEsat: 0.38 V

A low VCEsat improves power efficiency and reduces heat generation during operation, enhancing overall reliability.

Package Shape: RECTANGULAR

The rectangular shape facilitates space-efficient PCB layouts and improves thermal dissipation in electronic designs.

Terminal Form: FLAT

Flat terminals allow for easier soldering and better connectivity in surface-mount Assemblies, enhancing manufacturing efficiency.

No. of Elements: 2

The presence of two elements in one package enables dual-channel operations, which is beneficial for various applications requiring simultaneous amplification.

No. of Terminals: 8

Having 8 terminals provides necessary connections for power, input, and output, allowing for versatile circuit configurations.

Maximum Power Dissipation (Abs): 7 W

The high power dissipation capability allows for robust operation in demanding applications without overheating.

Package Style (Meter): FLATPACK

The flatpack style is ideal for space-constrained designs, allowing for better packaging density in electronic devices.

Maximum Power Dissipation Ambient: 1.4 W

Even at ambient conditions, the ability to dissipate 1.4 W makes it suitable for a range of applications.

Minimum DC Current Gain (hFE): 160

A high DC current gain enhances amplification efficiency, making it suitable for low-signal applications.

Maximum Operating Temperature: 200 °C

Withstands high temperatures, ensuring reliability in extreme environments and reducing risk of thermal failure.

Maximum Collector-Base Capacitance: 45 pF

Low capacitance values ensure faster switching speeds and better frequency response in high-frequency applications.

Maximum Collector-Emitter Voltage: 60 V

A maximum voltage rating of 60 V provides a margin of safety in high-voltage applications, increasing operational reliability.

Transistor Element Material: SILICON

Silicon materials provide a balance of cost and performance, making it widely used and reliable across various applications.

Maximum Turn On Time (ton): 175 ns

Fast turn-on time enables high-speed switching applications, improving overall system response.

Minimum Operating Temperature: -65 °C

The ability to operate in extreme low temperatures makes this transistor suitable for aerospace and defense applications.

Maximum Collector Current (IC): 0.8 A

The ability to handle up to 0.8 A of collector current makes it useful for a variety of applications requiring moderate power handling.

Maximum Turn Off Time (toff): 2500 ns

A relatively fast turn-off time optimizes system performance by reducing delays, which is critical in high-speed applications.

Terminal Position: DUAL

Dual terminal positioning allows for easier circuit integration and layout design, enhancing the overall efficiency of PCB design.

Reference Standard: MIL-19500; RH - 100K Rad(Si)

Compliant with military standard ensures reliability and performance in harsh environments, making it suitable for critical applications.

Technical Specifications

Power Bipolar Junction Transistors (BJT) JANSR2ST3360KT attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from STMicroelectronics

Specs

Additional Features:

HIGH RELIABILITY

Maximum Collector Current (IC):

Maximum Collector-Base Capacitance:

45 pF

Maximum Collector-Emitter Voltage:

60 V

Configuration:

Minimum DC Current Gain (hFE):

160

JESD-30 Code:

R-CDFP-F8

No. of Elements:

2

No. of Terminals:

8

Maximum Operating Temperature:

200 Cel

Minimum Operating Temperature:

-65 Cel

Package Body Material:

CERAMIC, METAL-SEALED COFIRED

Package Shape:

RECTANGULAR

Package Style (Meter):

FLATPACK

Polarity or Channel Type:

Maximum Power Dissipation Ambient:

1.4 W

Maximum Power Dissipation (Abs):

7 W

Qualification:

Not Qualified

Reference Standard:

MIL-19500; RH - 100K Rad(Si)

Surface Mount:

YES

Terminal Form:

FLAT

Terminal Position:

DUAL

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Maximum Turn Off Time (toff):

2500 ns

Maximum Turn On Time (ton):

175 ns

Maximum VCEsat:

.38 V

Trade Compliance

JANSR2ST3360KT Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

Category top products 20

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