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JANS2ST3360KG

STMicroelectronics

JANS2ST3360KG by STMicroelectronics

JANS2ST3360KG by STMicroelectronics is a versatile NPN/PNP BJT designed for amplifier applications. It features a max VCEsat of 0.38V, power dissipation of 7W, and operates b/w -65 °C to 200 °C. Ideal for high-performance circuits in harsh environments.

Median Price

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Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 2,705 parts In-Stock

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2,705

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Digiode

USA . 1,176 parts In-Stock

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1,176

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Anansix

USA . 707 parts In-Stock

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707

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Distributors (Availability)

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IDEA Electronic Components Group

UK . 1,081 parts In-Stock

1+ parts

$0.747

100+ parts

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1k+ parts

$0.672

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1,081

$0.747

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$0.672

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MKK Technologies

India . 953 parts In-Stock

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$1.405

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953

$1.405

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DigiPath Technology Company

USA . 953 parts In-Stock

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$1.405

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953

$1.405

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Corphita

USA . 1,512 parts In-Stock

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Parana Technologies

USA . 1,067 parts In-Stock

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$0.893

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1,067

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$0.893

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Overview

Elevate your designs with the JANS2ST3360KG from STMicroelectronics, a beacon of quality and reliability in the realm of power bipolar junction transistors. With robust performance across temperatures, this versatile NPN/PNP configuration ensures exceptional efficiency for amplifiers in demanding applications. Trust in STMicroelectronics' legacy of innovation to deliver superior durability and value, empowering engineers to create cutting-edge solutions. Unlock unparalleled performance today!

Feature Benefit Bullets

Package Body Material: CERAMIC, METAL-SEALED COFIRED

The durable and hermetic package offers excellent reliability and thermal stability, making it ideal for demanding applications.

Polarity or Channel Type: NPN AND PNP

Offering both NPN and PNP configurations allows for flexible circuit design and various amplification functions.

Configuration: SEPARATE, 2 ELEMENTS

Separate elements enhance versatility, enabling independent operation or combined functionalities for improved circuit design.

Transistor Application: AMPLIFIER

Designed specifically for amplification, ensuring high performance in audio and signal processing applications.

Surface Mount: YES

Surface mount technology facilitates compact designs and automated assembly, reducing manufacturing costs and time.

Maximum VCEsat: 0.38 V

Low saturation voltage contributes to higher efficiency and less power loss, improving overall performance in power-sensitive applications.

Package Shape: RECTANGULAR

The rectangular shape is optimized for efficient PCB layout, enabling better space utilization and organization of components.

Terminal Form: FLAT

Flat terminals improve contact area and contribute to better thermal management, ensuring stability during operation.

No. of Elements: 2

Having two elements allows for integrated functionality, reducing the need for additional components in circuit design.

No. of Terminals: 8

Eight terminals provide multiple connection options, enhancing flexibility and simplifying complex designs.

Maximum Power Dissipation (Abs): 7 W

A high power dissipation capability enables effective management of heat, ensuring reliable operation in high-power applications.

Package Style (Meter): FLATPACK

Flatpack configuration supports compact designs while maintaining performance, making it suitable for space-constrained applications.

Maximum Power Dissipation Ambient: 1.4 W

This specification ensures safe operation in ambient conditions, making it adaptable to various environments.

Minimum DC Current Gain (hFE): 160

A minimum current gain of 160 enhances the transistor's efficiency, improving signal amplification in low-power applications.

Maximum Operating Temperature: 200 °C

High operating temperature limits provide design flexibility and ensure the transistor remains functional in extreme conditions.

Maximum Collector-Base Capacitance: 45 pF

Low capacitance reduces signal distortion and enhances high-frequency response, making it suitable for RF and high-speed applications.

Maximum Collector-Emitter Voltage: 60 V

This voltage rating allows for a broad range of applications, from low to medium power circuits, enhancing its versatility.

Transistor Element Material: SILICON

Silicon materials ensure good performance characteristics such as thermal stability and moderate cost, making it widely used.

Maximum Turn On Time (ton): 175 ns

Fast turn-on time enables efficient switching and improved performance in high-speed applications.

Minimum Operating Temperature: -65 °C

Low operating temperature threshold allows for usage in extreme conditions, ensuring reliability in harsh environments.

Maximum Collector Current (IC): 0.8 A

Moderate collector current capability supports various applications, balancing performance and thermal management.

Maximum Turn Off Time (toff): 2500 ns

A reasonable turn-off time helps enhance switching applications, contributing to efficient power management.

Terminal Position: DUAL

Dual terminal positioning simplifies layout for dual-element applications, making circuit design easier.

Reference Standard: MIL-19500

Meeting military standards ensures high reliability and performance, making it suitable for stringent applications.

Technical Specifications

Power Bipolar Junction Transistors (BJT) JANS2ST3360KG attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from STMicroelectronics

Specs

Additional Features:

HIGH RELIABILITY

Maximum Collector Current (IC):

Maximum Collector-Base Capacitance:

45 pF

Maximum Collector-Emitter Voltage:

60 V

Configuration:

Minimum DC Current Gain (hFE):

160

JESD-30 Code:

R-CDFP-F8

No. of Elements:

2

No. of Terminals:

8

Maximum Operating Temperature:

200 Cel

Minimum Operating Temperature:

-65 Cel

Package Body Material:

CERAMIC, METAL-SEALED COFIRED

Package Shape:

RECTANGULAR

Package Style (Meter):

FLATPACK

Polarity or Channel Type:

Maximum Power Dissipation Ambient:

1.4 W

Maximum Power Dissipation (Abs):

7 W

Qualification:

Not Qualified

Reference Standard:

MIL-19500

Surface Mount:

YES

Terminal Form:

FLAT

Terminal Position:

DUAL

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Maximum Turn Off Time (toff):

2500 ns

Maximum Turn On Time (ton):

175 ns

Maximum VCEsat:

.38 V

Trade Compliance

JANS2ST3360KG Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

Category top products 20

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