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DTV1500MFP

STMicroelectronics

DTV1500MFP by STMicroelectronics

DTV1500MFP by STMicroelectronics is a high-voltage rectifier diode with a max reverse recovery time of 0.135 µs and can handle up to 6 A output current. It operates at temperatures up to 150 °C, making it ideal for fast recovery applications. Its robust design features a flange mount in a rectangular plastic/epoxy package.

Median Price

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Lifecycle Status

Suppliers In-Stock

9

In-Stock Inventory

1k+

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J2 Sourcing AB

Sweden . 45,000 parts In-Stock

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45,000

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ComSIT Distribution GmbH

Germany . 23,149 parts In-Stock

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ComSIT USA

USA . 23,149 parts In-Stock

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23,149

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Q Components

USA . 19,800 parts In-Stock

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19,800

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Anansix

USA . 2,364 parts In-Stock

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2,364

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Digiode

USA . 1,128 parts In-Stock

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1,128

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Vyrian

USA . 856 parts In-Stock

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856

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Infinite Electronics LLP

India . 367 parts In-Stock

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367

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ECAB

Sweden . 80 parts In-Stock

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80

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IDEA Electronic Components Group

UK . 1,057 parts In-Stock

1+ parts

$0.178

100+ parts

-

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$0.161

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1,057

$0.178

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$0.161

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MKK Technologies

India . 2,290 parts In-Stock

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$0.336

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2,290

$0.336

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DigiPath Technology Company

USA . 2,290 parts In-Stock

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$0.336

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$0.336

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Native Components

USA . 283 parts In-Stock

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$201.990

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$193.911

283

$201.990

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$193.911

Northwest PG Solutions

USA . 548 parts In-Stock

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$222.189

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548

$222.189

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Infinite Electronics LLP (Excess)

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Kepictronics

USA . 10,000 parts In-Stock

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A-Z Elektronik GmbH

Germany . 7,002 parts In-Stock

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Alle Elektronik GmbH

Germany . 4,668 parts In-Stock

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Corphita

USA . 3,749 parts In-Stock

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Parana Technologies

USA . 1,038 parts In-Stock

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$0.213

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$0.213

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Assy Fe

Spain . 1,000 parts In-Stock

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Overview

Elevate your projects with the DTV1500MFP by STMicroelectronics, a leading name in semiconductor innovation. This high-voltage, very fast recovery rectifier diode guarantees reliability and exceptional performance, making it ideal for demanding applications. Its robust design ensures minimal downtime, while its impressive heat resistance empowers you to push boundaries. Trust in STMicroelectronics' legacy of quality and enjoy unmatched efficiency and longevity for your electronic solutions.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy body material provides good durability and resistance to environmental factors, making it suitable for a variety of applications.

Config: SINGLE

The single configuration simplifies circuit design and reduces footprint in space-constrained applications.

Maximum Reverse Recovery Time: 0.135 µs

The fast reverse recovery time allows for efficient switching in high-frequency applications, minimizing energy loss and improving overall performance.

Package Shape: RECTANGULAR

The rectangular shape optimizes mounting options and enhances thermal management by facilitating effective heat dissipation.

No. of Terminals: 2

With only two terminals, this diode is easy to integrate into circuits, ensuring straightforward connections and reducing complexity.

Package Style (Meter): FLANGE MOUNT

The flange mount design provides robust mechanical stability, enhancing reliability in high-stress environments.

Application: HIGH VOLTAGE VERY FAST RECOVERY

Designed for high voltage and very fast recovery, this diode is ideal for applications that require quick switching and high reliability.

Maximum Operating Temperature: 150 °C

The ability to operate at high temperatures increases the diode's versatility and reliability in demanding applications.

Terminal Finish: MATTE TIN

The matte tin finish enhances solderability and corrosion resistance, ensuring durable connections over time.

Terminal Position: SINGLE

Having a single terminal position simplifies layout design and enhances placement accuracy during assembly.

Case Connection: ISOLATED

Isolated case connections improve safety and performance by reducing the risk of unintended short circuits.

Diode Type: RECTIFIER DIODE

As a rectifier diode, it effectively converts AC to DC, making it suitable for power conversion applications.

Maximum Forward Voltage (VF): 1.65 V

A low forward voltage drop ensures efficient operation, reducing power losses during forward conduction.

Maximum Output Current: 6 A

With a maximum output current of 6 A, this diode can handle substantial loads, making it ideal for power applications.

Terminal Form: THROUGH-HOLE

Through-hole form allows for sturdy mounting on printed circuit boards, ensuring reliability under mechanical stress.

Maximum Repetitive Peak Reverse Voltage: 1500 V

A high peak reverse voltage rating makes this diode suitable for high voltage applications, enhancing system robustness.

Maximum Non-Repetitive Peak Forward Current: 75 A

The capability to handle peak forward currents of up to 75 A provides significant overload protection in transient conditions.

Diode Element Material: SILICON

Silicon as the diode element material offers excellent electrical properties and reliability, ensuring long service life.

Technical Specifications

Diodes & Rectifiers DTV1500MFP attributes and parameters. Explore more Diodes & Rectifiers devices from STMicroelectronics

Specs

Application:

HIGH VOLTAGE VERY FAST RECOVERY

Case Connection:

ISOLATED

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

1.65 V

JESD-30 Code:

R-PSFM-T2

JESD-609 Code:

e3

Maximum Non Repetitive Peak Forward Current:

75 A

No. of Elements:

1

No. of Phases:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Maximum Output Current:

6 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

FLANGE MOUNT

Qualification:

Not Qualified

Maximum Repetitive Peak Reverse Voltage:

1500 V

Maximum Reverse Recovery Time:

.135 us

Sub-Category:

Rectifier Diodes

Surface Mount:

NO

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Position:

Trade Compliance

DTV1500MFP Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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