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DTV16D

STMicroelectronics

DTV16D by STMicroelectronics

DTV16D by STMicroelectronics is a single rectifier diode with a max reverse recovery time of 0.3 us and a max forward voltage of 1.6 V. It is designed for high voltage very fast recovery applications, operating at temperatures up to 150 °C. This through-hole diode has a max repetitive peak reverse voltage of 1500 V and can handle a max output current of 5 A.

Median Price

-

Lifecycle Status

Suppliers In-Stock

6

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 4,114 parts In-Stock

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4,114

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Vyrian

USA . 3,770 parts In-Stock

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3,770

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ECAB

Sweden . 500 parts In-Stock

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500

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Anansix

USA . 489 parts In-Stock

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489

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PC Components Company LLC

USA . 25 parts In-Stock

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25

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Bristol Electronics

USA . 25 parts In-Stock

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25

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

IDEA Electronic Components Group

UK . 1,420 parts In-Stock

1+ parts

$0.020

100+ parts

-

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$0.018

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1,420

$0.020

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$0.018

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MKK Technologies

India . 1,553 parts In-Stock

1+ parts

$0.038

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1,553

$0.038

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DigiPath Technology Company

USA . 1,553 parts In-Stock

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$0.038

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1,553

$0.038

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Native Components

USA . 897 parts In-Stock

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$0.315

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$0.303

897

$0.315

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$0.303

Northwest PG Solutions

USA . 1,615 parts In-Stock

1+ parts

$0.347

100+ parts

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$0.306

1,615

$0.347

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$0.306

Authorized Procurement Solutions

USA . 3,000 parts In-Stock

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3,000

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Corphita

USA . 2,580 parts In-Stock

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2,580

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Parana Technologies

USA . 2,359 parts In-Stock

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$0.024

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2,359

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$0.024

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Overview

Unleash the power of high voltage with the DTV16D by STMicroelectronics. This RECTIFIER DIODE offers lightning-fast recovery, ensuring optimal performance in a variety of applications. Manufactured by industry leader STMicroelectronics, this diode guarantees quality and reliability. Whether you need to boost efficiency or enhance productivity, the DTV16D delivers outstanding value and benefits. Upgrade your electronics with the DTV16D and experience the difference today.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the diode, making it suitable for various operating conditions.

Maximum Reverse Recovery Time: 0.3 us

Ensures fast reverse recovery time, making the diode efficient for high speed switching applications.

Package Shape: RECTANGULAR

Allows for easy installation and mounting in electronic circuits.

Application: HIGH VOLTAGE VERY FAST RECOVERY

Designed specifically for high voltage applications requiring very fast recovery times.

Maximum Operating Temperature: 150 °C

Can operate at high temperatures without losing performance, suitable for demanding environments.

Maximum Output Current: 5 A

Capable of handling high output currents, making it suitable for power electronics applications.

Maximum Repetitive Peak Reverse Voltage: 1500 V

Suitable for high voltage applications, providing reliable performance under varying reverse voltage conditions.

Technical Specifications

Diodes & Rectifiers DTV16D attributes and parameters. Explore more Diodes & Rectifiers devices from STMicroelectronics

Specs

Application:

HIGH VOLTAGE VERY FAST RECOVERY

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

1.6 V

JEDEC-95 Code:

TO-220AC

JESD-30 Code:

R-PSFM-T2

JESD-609 Code:

e0

Maximum Non Repetitive Peak Forward Current:

50 A

No. of Elements:

1

No. of Phases:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Maximum Output Current:

5 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

FLANGE MOUNT

Qualification:

Not Qualified

Maximum Repetitive Peak Reverse Voltage:

1500 V

Maximum Reverse Recovery Time:

.3 us

Sub-Category:

Rectifier Diodes

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

Terminal Position:

Trade Compliance

DTV16D Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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