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DTV1500HFP

STMicroelectronics

DTV1500HFP by STMicroelectronics

DTV1500HFP by STMicroelectronics is a high-voltage rectifier diode designed for fast recovery applications. It features a max reverse recovery time of 0.125 µs, supports up to 1500 V peak reverse voltage, and operates at temperatures up to 150 °C. Ideal for efficient power management in electronic circuits.

Median Price

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Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 2,696 parts In-Stock

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2,696

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Vyrian

USA . 1,418 parts In-Stock

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1,418

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ComSIT Distribution GmbH

Germany . 743 parts In-Stock

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743

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Anansix

USA . 460 parts In-Stock

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460

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ECAB

Sweden . 110 parts In-Stock

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110

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Distributors (Availability)

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IDEA Electronic Components Group

UK . 2,130 parts In-Stock

1+ parts

$0.171

100+ parts

-

1k+ parts

$0.154

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2,130

$0.171

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$0.154

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MKK Technologies

India . 615 parts In-Stock

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$0.322

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615

$0.322

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DigiPath Technology Company

USA . 615 parts In-Stock

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$0.322

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615

$0.322

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Native Components

USA . 865 parts In-Stock

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$2.060

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865

$2.060

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Northwest PG Solutions

USA . 1,998 parts In-Stock

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$2.266

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1,998

$2.266

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Kepictronics

USA . 10,000 parts In-Stock

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A-Z Elektronik GmbH

Germany . 7,014 parts In-Stock

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7,014

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Alle Elektronik GmbH

Germany . 4,676 parts In-Stock

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Authorized Procurement Solutions

USA . 4,500 parts In-Stock

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4,500

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Parana Technologies

USA . 1,760 parts In-Stock

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$0.205

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1,760

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$0.205

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Corphita

USA . 1,168 parts In-Stock

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Overview

Unlock unparalleled performance with the DTV1500HFP from STMicroelectronics, a leading name in innovative diode technology. This high-voltage, fast-recovery rectifier delivers exceptional reliability and efficiency, making it perfect for demanding applications. With its robust design and superior thermal management, you can trust it to enhance your system's durability and longevity. Choose the DTV1500HFP for solutions that empower your projects with unmatched quality and value!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The durable plastic/epoxy body material ensures long-lasting reliability and protection against environmental factors, making it suitable for various applications.

Config: SINGLE

Single configuration simplifies the design and integration process in circuits, making it easier for engineers to implement.

Maximum Reverse Recovery Time: 0.125 us

A low reverse recovery time of 0.125 µs allows for fast switching applications, reducing losses and enhancing efficiency in high-speed circuits.

Package Shape: RECTANGULAR

The rectangular package shape allows for efficient use of space on PCB layouts, facilitating compact designs.

No. of Terminals: 2

With only two terminals, this diode simplifies connections in circuits, reducing the complexity of assembly and design.

Package Style (Meter): FLANGE MOUNT

Flange mount style provides secure mounting options, enhancing mechanical stability in various applications.

Application: HIGH VOLTAGE VERY FAST RECOVERY

Designed for high voltage and very fast recovery, this diode is ideal for demanding applications where rapid switching and high efficiency are critical.

Maximum Operating Temperature: 150 °C

A high maximum operating temperature of 150 °C ensures reliable performance even in challenging thermal environments.

Terminal Finish: MATTE TIN

The matte tin terminal finish offers excellent solderability and corrosion resistance, promoting long-term reliability.

Terminal Position: SINGLE

Single terminal position allows easy installation and simplifies integration into electronic designs.

Case Connection: ISOLATED

Isolated case connection improves safety by minimizing the risk of short circuits, making the diode suitable for sensitive applications.

Diode Type: RECTIFIER DIODE

As a rectifier diode, it is specifically designed to convert alternating current (AC) to direct current (DC), essential for a variety of power supply applications.

Maximum Forward Voltage (VF): 1.7 V

The maximum forward voltage limit of 1.7 V allows for efficient operation with minimal voltage drop, favoring low power loss.

Maximum Output Current: 6 A

Sustaining a maximum output current of 6 A makes this diode capable of handling substantial loads, ideal for high-current applications.

Terminal Form: THROUGH-HOLE

Through-hole terminal form allows for strong mechanical connections and is ideal for high-power applications requiring enhanced durability.

Maximum Repetitive Peak Reverse Voltage: 1500 V

With a high reverse voltage rating of 1500 V, this diode is suitable for high-voltage applications, ensuring durability and reliability under demanding conditions.

Maximum Non-Repetitive Peak Forward Current: 80 A

An impressive non-repetitive forward current rating of 80 A allows for handling of transient events and overload conditions without damage.

Diode Element Material: SILICON

Silicon material is widely used for its excellent electrical properties, ensuring reliable performance and longevity in a wide range of applications.

Technical Specifications

Diodes & Rectifiers DTV1500HFP attributes and parameters. Explore more Diodes & Rectifiers devices from STMicroelectronics

Specs

Application:

HIGH VOLTAGE VERY FAST RECOVERY

Case Connection:

ISOLATED

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

1.7 V

JEDEC-95 Code:

TO-220AC

JESD-30 Code:

R-PSFM-T2

JESD-609 Code:

e3

Maximum Non Repetitive Peak Forward Current:

80 A

No. of Elements:

1

No. of Phases:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Maximum Output Current:

6 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

FLANGE MOUNT

Qualification:

Not Qualified

Maximum Repetitive Peak Reverse Voltage:

1500 V

Maximum Reverse Recovery Time:

.125 us

Sub-Category:

Rectifier Diodes

Surface Mount:

NO

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Position:

Trade Compliance

DTV1500HFP Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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