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DTV1500LFP

STMicroelectronics

DTV1500LFP by STMicroelectronics

DTV1500LFP by STMicroelectronics is a high-voltage rectifier diode designed for fast recovery applications. It features a max reverse recovery time of 0.17 µs, supports up to 1500 V, and operates at temperatures up to 150 °C. Ideal for efficient power management in electronic circuits.

Median Price

-

Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

ECAB

Sweden . 6,350 parts In-Stock

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6,350

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Digiode

USA . 4,343 parts In-Stock

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4,343

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Vyrian

USA . 4,282 parts In-Stock

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4,282

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Anansix

USA . 2,548 parts In-Stock

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2,548

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

IDEA Electronic Components Group

UK . 947 parts In-Stock

1+ parts

$0.044

100+ parts

-

1k+ parts

$0.040

10k+ parts

-

947

$0.044

-

$0.040

-

MKK Technologies

India . 35 parts In-Stock

1+ parts

$0.083

100+ parts

-

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35

$0.083

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DigiPath Technology Company

USA . 35 parts In-Stock

1+ parts

$0.083

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35

$0.083

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Native Components

USA . 541 parts In-Stock

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$1.500

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541

$1.500

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Northwest PG Solutions

USA . 2,142 parts In-Stock

1+ parts

$1.650

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2,142

$1.650

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A-Z Elektronik GmbH

Germany . 5,490 parts In-Stock

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5,490

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Authorized Procurement Solutions

USA . 4,000 parts In-Stock

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4,000

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Assy Fe

Spain . 3,808 parts In-Stock

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3,808

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Alle Elektronik GmbH

Germany . 3,660 parts In-Stock

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3,660

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Corphita

USA . 1,837 parts In-Stock

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1,837

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Parana Technologies

USA . 645 parts In-Stock

1+ parts

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$0.053

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645

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$0.053

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Kepictronics

USA . 332 parts In-Stock

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332

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Overview

Elevate your electronic designs with the DTV1500LFP diode from STMicroelectronics, a leader in semiconductor innovation. This high-voltage, very fast recovery rectifier diode is engineered for efficiency and reliability, making it essential for demanding applications. With its robust performance at temperatures up to 150 °C, it ensures long-lasting durability. Trust STMicroelectronics to deliver quality components that enhance your products’ performance while minimizing energy loss, providing exceptional value to your projects.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This durable material provides effective protection against environmental factors, ensuring reliability in various applications.

Config: SINGLE

The single configuration is ideal for designs requiring discreet diode placement, simplifying circuit layout.

Maximum Reverse Recovery Time: 0.17 µs

A low reverse recovery time means the diode can switch quickly, enhancing efficiency in high-speed applications.

Package Shape: RECTANGULAR

The rectangular shape is space-efficient, allowing for easier integration into compact designs.

No. of Terminals: 2

A simple two-terminal design makes it easy to integrate the diode into circuits and simplifies assembly.

Package Style (Meter): FLANGE MOUNT

Flange mount style provides robust mounting options, ensuring secure installation in various applications.

Application: HIGH VOLTAGE VERY FAST RECOVERY

This diode is specifically designed for high voltage applications, making it a reliable choice for critical power management tasks.

Maximum Operating Temperature: 150 °C

A high operating temperature rating allows the diode to function reliably in demanding environments without performance degradation.

Terminal Finish: MATTE TIN

The matte tin finish ensures excellent solderability and corrosion resistance, enhancing overall reliability.

Terminal Position: SINGLE

Having a single terminal position streamlines connections, facilitating easier circuit design.

Case Connection: ISOLATED

Isolated case connections minimize the risk of unintended current paths, enhancing safety and performance.

Diode Type: RECTIFIER DIODE

As a rectifier diode, it is optimized for converting alternating current (AC) to direct current (DC), making it suitable for power supply applications.

Maximum Forward Voltage (VF): 1.5 V

A low forward voltage drop leads to reduced power loss and improved efficiency in circuits.

Maximum Output Current: 4 A

With a maximum output current of 4 A, this diode can handle substantial loads, making it versatile for various applications.

Terminal Form: THROUGH-HOLE

Through-hole terminals provide strong mechanical support and are well-suited for high-power applications.

Maximum Repetitive Peak Reverse Voltage: 1500 V

A high peak reverse voltage rating ensures this diode is capable of handling extreme conditions without failure.

Maximum Non-Repetitive Peak Forward Current: 50 A

The capability to withstand high non-repetitive peak forward currents enhances reliability in transient conditions.

Diode Element Material: SILICON

Silicon is the most commonly used semiconductor material, providing excellent performance in rectification and reliability.

Technical Specifications

Diodes & Rectifiers DTV1500LFP attributes and parameters. Explore more Diodes & Rectifiers devices from STMicroelectronics

Specs

Application:

HIGH VOLTAGE VERY FAST RECOVERY

Case Connection:

ISOLATED

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

1.5 V

JEDEC-95 Code:

TO-220AC

JESD-30 Code:

R-PSFM-T2

JESD-609 Code:

e3

Maximum Non Repetitive Peak Forward Current:

50 A

No. of Elements:

1

No. of Phases:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Maximum Output Current:

4 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

FLANGE MOUNT

Qualification:

Not Qualified

Maximum Repetitive Peak Reverse Voltage:

1500 V

Maximum Reverse Recovery Time:

.17 us

Sub-Category:

Rectifier Diodes

Surface Mount:

NO

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Position:

Trade Compliance

DTV1500LFP Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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