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BYT08PI-400RG

STMicroelectronics

BYT08PI-400RG by STMicroelectronics

BYT08PI-400RG from STMicroelectronics is a fast recovery rectifier diode with a max reverse voltage of 400 V and forward current of 8 A. It features a rapid reverse recovery time of just 0.075 µs, ideal for high-efficiency applications. Operating temps range from -40 °C to 150 °C, ensuring reliability in diverse environments.

Median Price

-

Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 5,484 parts In-Stock

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Anansix

USA . 1,345 parts In-Stock

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Digiode

USA . 1,237 parts In-Stock

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LIBRA Elektronik GmbH

Germany . 50 parts In-Stock

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50

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IDEA Electronic Components Group

UK . 1,047 parts In-Stock

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$0.181

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-

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$0.163

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1,047

$0.181

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$0.163

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MKK Technologies

India . 678 parts In-Stock

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$0.341

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678

$0.341

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DigiPath Technology Company

USA . 678 parts In-Stock

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$0.341

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678

$0.341

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AZTECH Wire

Italy . 604 parts In-Stock

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$8.320

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Metaverse IC Inc.

Canada . 56,986 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

USA . 21,662 parts In-Stock

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Corphita

USA . 3,623 parts In-Stock

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Parana Technologies

USA . 2,191 parts In-Stock

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$0.217

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Northwest PG Solutions

USA . 879 parts In-Stock

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Native Components

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Overview

Unlock exceptional performance with the BYT08PI-400RG from STMicroelectronics—a trusted leader in semiconductor technology. This high-quality rectifier diode ensures swift recovery and reliability, making it perfect for demanding applications. With a robust design that withstands extreme temperatures, it delivers efficiency and longevity, adding significant value to your projects. Choose STMicroelectronics for unparalleled quality and innovation that drives success.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The durable plastic/epoxy body material provides enhanced insulation and heat resistance, making this diode suitable for various applications in challenging environments.

Config: SINGLE

A single diode configuration simplifies the circuit design and accounts for lower space requirements on the PCB.

Maximum Reverse Recovery Time: 0.075 us

This short reverse recovery time allows for fast switching capabilities, making the diode ideal for high-frequency applications.

Maximum Reverse Current: 15 uA

A low reverse current ensures minimal leakage, contributing to better efficiency and performance in power management applications.

Package Shape: RECTANGULAR

The rectangular shape facilitates better layout design and packaging efficiency in circuit boards.

No. of Terminals: 2

With only two terminals, this diode simplifies the connection process, reducing potential points of failure.

Package Style (Meter): FLANGE MOUNT

The flange mount style provides a secure installation option, enhancing mechanical stability for various applications.

Application: FAST RECOVERY

Designed for fast recovery, this diode is especially suited for use in switching power supplies and other applications requiring quick turn-on and turn-off.

Maximum Operating Temperature: 150 °C

A high operating temperature limit allows for the diode to be used in demanding environments without compromising performance.

Minimum Operating Temperature: -40 °C

The wide operational temperature range ensures reliability and performance even in extreme cold conditions.

Terminal Finish: MATTE TIN

The matte tin finish provides good solderability and corrosion resistance, enhancing the longevity of the connections.

Terminal Position: SINGLE

Single terminal positioning allows for straightforward integration into electronic designs, optimizing layout efficiency.

Case Connection: ISOLATED

Isolated case connection minimizes parasitic capacitance and ensures safer operation, particularly in high-voltage applications.

Maximum Power Dissipation: 20 W

With a maximum power dissipation of 20 W, this diode can handle substantial energy loads, making it versatile for high-power applications.

Diode Type: RECTIFIER DIODE

As a rectifier diode, it effectively converts alternating current (AC) to direct current (DC), crucial for power supply designs.

Maximum Forward Voltage (VF): 1.5 V

The low forward voltage drop (VF) leads to higher efficiency and reduced heat generation in the diode during operation.

Maximum Output Current: 8 A

With an output current rating of 8 A, it is suitable for a wide range of applications, enabling it to support various load requirements.

Terminal Form: THROUGH-HOLE

The through-hole design ensures robust connection and ease of replacement, fitting well in larger assemblies.

Maximum Repetitive Peak Reverse Voltage: 400 V

Supporting high reverse voltage tolerances, this diode offers reliability in high-voltage applications, preventing breakdown.

Maximum Non-Repetitive Peak Forward Current: 100 A

The ability to handle spikes of up to 100 A ensures the diode can withstand transient events without failure.

Diode Element Material: SILICON

Using silicon as the semiconductor material provides the diode with good conductivity and efficiency, making it a standard choice in the industry.

Technical Specifications

Diodes & Rectifiers BYT08PI-400RG attributes and parameters. Explore more Diodes & Rectifiers devices from STMicroelectronics

Specs

Additional Features:

FREE WHEELING DIODE

Application:

FAST RECOVERY

Case Connection:

ISOLATED

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

1.5 V

JEDEC-95 Code:

TO-220AC

JESD-30 Code:

R-PSFM-T2

JESD-609 Code:

e3

Maximum Non Repetitive Peak Forward Current:

100 A

No. of Elements:

1

No. of Phases:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-40 Cel

Maximum Output Current:

8 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

FLANGE MOUNT

Maximum Power Dissipation:

20 W

Qualification:

Not Qualified

Maximum Repetitive Peak Reverse Voltage:

400 V

Maximum Reverse Current:

15 uA

Maximum Reverse Recovery Time:

.075 us

Sub-Category:

Rectifier Diodes

Surface Mount:

NO

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Position:

Trade Compliance

BYT08PI-400RG Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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