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BYT08P-200

STMicroelectronics

BYT08P-200 by STMicroelectronics

BYT08P-200 by STMicroelectronics is a fast recovery rectifier diode with a max reverse recovery time of 0.075 µs and supports up to 8 A output current. It operates b/w -40 °C to 150°C, making it ideal for high-temperature applications. This diode features a flange mount design and handles peak reverse voltages of 200 V.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Anansix

USA . 2,537 parts In-Stock

1+ parts

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2,537

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Digiode

USA . 1,100 parts In-Stock

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1,100

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Vyrian

USA . 96 parts In-Stock

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96

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

IDEA Electronic Components Group

UK . 54 parts In-Stock

1+ parts

$0.089

100+ parts

-

1k+ parts

$0.080

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54

$0.089

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$0.080

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MKK Technologies

India . 2,316 parts In-Stock

1+ parts

$0.168

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2,316

$0.168

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DigiPath Technology Company

USA . 2,316 parts In-Stock

1+ parts

$0.168

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2,316

$0.168

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Northwest PG Solutions

USA . 2,280 parts In-Stock

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2,280

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Parana Technologies

USA . 1,451 parts In-Stock

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$0.107

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1,451

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$0.107

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Native Components

USA . 725 parts In-Stock

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725

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Corphita

USA . 498 parts In-Stock

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498

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Overview

Elevate your projects with the BYT08P-200 rectifier diode from STMicroelectronics, a leader in semiconductor innovation. This fast recovery diode ensures exceptional performance and reliability, even in extreme conditions, making it ideal for power supply systems and industrial applications. With its robust design and superior thermal management, experience reduced downtime and enhanced efficiency—perfect for demanding environments where quality matters most.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy for the package body ensures durability and resistance to environmental factors, making it suitable for a wide range of applications.

Config: SINGLE

A single configuration offers simplicity in design and integration, making it easier for engineers to use in various circuits.

Maximum Reverse Recovery Time: 0.075 us

A low reverse recovery time indicates fast switching capabilities, making this diode ideal for high-frequency applications.

Package Shape: RECTANGULAR

The rectangular package shape allows for efficient space utilization on PCB layouts, enhancing design flexibility.

No. of Terminals: 2

With only two terminals, installation is straightforward, reducing complexity in circuit assembly.

Package Style (Meter): FLANGE MOUNT

Flange mount style provides secure mounting options, ensuring reliable connections in varied environments.

Application: FAST RECOVERY

Designed for fast recovery applications, this diode offers excellent performance in power management and signal integrity.

Maximum Operating Temperature: 150 °C

Withstanding high temperatures makes this diode suitable for harsh environments and enhances its reliability.

Minimum Operating Temperature: -40 °C

A wide temperature range allows the diode to function in extreme conditions, broadening its application scope.

Terminal Finish: MATTE TIN

The matte tin finish provides good solderability and corrosion resistance, ensuring lasting performance.

Terminal Position: SINGLE

Single terminal positioning simplifies circuit design and integration, making it easier to work with.

Case Connection: CATHODE

Having the cathode connection simplifies orientation and integration into circuit designs.

Diode Type: RECTIFIER DIODE

As a rectifier diode, it effectively converts AC to DC, making it essential for power supply applications.

Maximum Forward Voltage (VF): 1.5 V

A low forward voltage drop enhances energy efficiency, reducing power loss in circuits.

Maximum Output Current: 8 A

With a maximum output current of 8 A, this diode can handle significant loads, making it suitable for high-power applications.

Terminal Form: THROUGH-HOLE

The through-hole terminal type provides robust mechanical connection and ease of soldering for prototyping.

Maximum Repetitive Peak Reverse Voltage: 200 V

A high repetitive peak reverse voltage rating allows for versatile use in circuits with substantial reverse voltage requirements.

Maximum Non Repetitive Peak Forward Current: 100 A

The ability to handle high non-repetitive peak forward currents makes this diode resilient against transient conditions.

Diode Element Material: SILICON

Silicon as the diode element material provides excellent electrical properties, ensuring reliable performance in a variety of applications.

Technical Specifications

Diodes & Rectifiers BYT08P-200 attributes and parameters. Explore more Diodes & Rectifiers devices from STMicroelectronics

Specs

Additional Features:

FREE WHEELING DIODE

Application:

FAST RECOVERY

Case Connection:

CATHODE

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

1.5 V

JEDEC-95 Code:

TO-220AC

JESD-30 Code:

R-PSFM-T2

JESD-609 Code:

e3

Maximum Non Repetitive Peak Forward Current:

100 A

No. of Elements:

1

No. of Phases:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-40 Cel

Maximum Output Current:

8 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

FLANGE MOUNT

Qualification:

Not Qualified

Maximum Repetitive Peak Reverse Voltage:

200 V

Maximum Reverse Recovery Time:

.075 us

Sub-Category:

Rectifier Diodes

Surface Mount:

NO

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Position:

Trade Compliance

BYT08P-200 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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