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BYT01-200

STMicroelectronics

BYT01-200 by STMicroelectronics

BYT01-200 by STMicroelectronics is a silicon rectifier diode with a max reverse recovery time of 0.055 µs and can handle up to 1 A output current. It operates in temperatures from -40 °C to 150°C, making it ideal for various electronic applications. Its compact design features an isolated axial terminal configuration for easy integration.

Median Price

$1.449

Lifecycle Status

Suppliers In-Stock

8

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Component Electronics Inc.

Canada . 50 parts In-Stock

1+ parts

$0.120

100+ parts

$0.090

1k+ parts

$0.080

10k+ parts

-

50

$0.120

$0.090

$0.080

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ECAB

Sweden . 4,282 parts In-Stock

1+ parts

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4,282

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Anansix

USA . 2,448 parts In-Stock

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2,448

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Digiode

USA . 1,056 parts In-Stock

1+ parts

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1,056

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Fibra_Brandt Electronic GMBH

Germany . 973 parts In-Stock

1+ parts

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973

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Vyrian

USA . 136 parts In-Stock

1+ parts

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136

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ACDS - Activité Composants Distribution Service

France . 90 parts In-Stock

1+ parts

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90

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Component Sense

UK . 9 parts In-Stock

1+ parts

-

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$2.778

9

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$2.778

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

IDEA Electronic Components Group

UK . 1,501 parts In-Stock

1+ parts

$0.055

100+ parts

-

1k+ parts

$0.050

10k+ parts

-

1,501

$0.055

-

$0.050

-

MKK Technologies

India . 1,197 parts In-Stock

1+ parts

$0.104

100+ parts

-

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1,197

$0.104

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DigiPath Technology Company

USA . 1,197 parts In-Stock

1+ parts

$0.104

100+ parts

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1,197

$0.104

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Corphita

USA . 4,040 parts In-Stock

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4,040

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Northwest PG Solutions

USA . 2,194 parts In-Stock

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2,194

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Parana Technologies

USA . 1,401 parts In-Stock

1+ parts

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100+ parts

$0.066

1k+ parts

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1,401

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$0.066

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Native Components

USA . 474 parts In-Stock

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474

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Perfect Parts

USA . 96 parts In-Stock

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96

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Assy Fe

Spain . 48 parts In-Stock

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48

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Overview

Unlock the potential of your projects with the BYT01-200 rectifier diode from STMicroelectronics, a trusted leader in semiconductor solutions. This high-quality component ensures reliable performance across diverse applications, from consumer electronics to industrial systems. With exceptional thermal stability and low forward voltage, it enhances efficiency while simplifying designs. Experience peace of mind knowing you're backed by STMicroelectronics' commitment to excellence and innovation!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy provides excellent durability and protection against environmental factors, making the diode reliable for various applications.

Config: SINGLE

A single configuration simplifies design and integration into circuits, offering an efficient solution for rectification needs.

Maximum Reverse Recovery Time: 0.055 us

A low reverse recovery time enhances switching performance, making this diode suitable for fast switching applications.

Package Shape: ROUND

The round package shape allows for easy integration into circuit boards and ensures effective thermal management.

No. of Terminals: 2

Two terminals simplify the connection process and reduce the footprint on the PCB, saving space in compact designs.

Package Style (Meter): LONG FORM

The long form package style provides ample room for wire connections, facilitating easier assembly and installation.

Maximum Operating Temperature: 150 °C

A maximum operating temperature of 150 °C ensures reliability in high-temperature environments, making it suitable for demanding applications.

Minimum Operating Temperature: -40 °C

The ability to operate at -40 °C expands the range of applications, making it ideal for use in extreme weather conditions.

Terminal Position: AXIAL

Axial terminals facilitate easier placement on PCBs and allow for straightforward soldering, improving manufacturing efficiency.

Case Connection: ISOLATED

An isolated case connection improves safety and reduces the risk of electrical shorts, enhancing the reliability of the diode.

Maximum Power Dissipation: 1.33 W

With a maximum power dissipation of 1.33 W, this diode can handle substantial loads while maintaining operation within safe limits.

Diode Type: RECTIFIER DIODE

As a rectifier diode, it's optimized for converting AC to DC, making it suitable for power supply applications and solar inverters.

Maximum Forward Voltage (VF): 1.5 V

A low forward voltage drop enhances efficiency, resulting in lower power loss and improved overall circuit performance.

Maximum Output Current: 1 A

A maximum output current of 1 A allows for versatile applications in various electronic circuits without significant risk of overheating.

Terminal Form: WIRE

Wire terminal form provides versatile connection options for various mounting and installation configurations.

Maximum Repetitive Peak Reverse Voltage: 200 V

A high peak reverse voltage rating makes this diode suitable for applications involving high voltage transients and power management.

Diode Element Material: SILICON

Silicon as the diode element material ensures high performance and reliability, as it is a standard choice for rectifier applications.

Technical Specifications

Diodes & Rectifiers BYT01-200 attributes and parameters. Explore more Diodes & Rectifiers devices from STMicroelectronics

Specs

Additional Features:

FREE WHEELING DIODE, LOW NOISE

Case Connection:

ISOLATED

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

1.5 V

JESD-30 Code:

O-PALF-W2

No. of Elements:

1

No. of Phases:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-40 Cel

Maximum Output Current:

1 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

LONG FORM

Maximum Power Dissipation:

1.33 W

Qualification:

Not Qualified

Maximum Repetitive Peak Reverse Voltage:

200 V

Maximum Reverse Recovery Time:

.055 us

Sub-Category:

Rectifier Diodes

Surface Mount:

NO

Terminal Form:

Terminal Position:

Trade Compliance

BYT01-200 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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