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BYT08P-300

STMicroelectronics

BYT08P-300 by STMicroelectronics

BYT08P-300 by STMicroelectronics is a fast recovery rectifier diode with a max reverse recovery time of 0.075 µs and can handle up to 8 A output current. It operates b/w -40 °C to 150°C, making it ideal for high-temperature applications. Its compact flange mount design ensures easy integration in various electronic circuits.

Median Price

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Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 2,921 parts In-Stock

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Anansix

USA . 1,701 parts In-Stock

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1,701

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Digiode

USA . 1,049 parts In-Stock

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1,049

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ComSIT Distribution GmbH

Germany . 400 parts In-Stock

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400

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ECAB

Sweden . 35 parts In-Stock

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35

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Distributors (Availability)

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IDEA Electronic Components Group

UK . 664 parts In-Stock

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$0.136

100+ parts

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$0.123

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664

$0.136

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MKK Technologies

India . 1,448 parts In-Stock

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$0.256

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$0.256

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DigiPath Technology Company

USA . 1,448 parts In-Stock

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$0.256

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$0.256

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Parana Technologies

USA . 2,282 parts In-Stock

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$0.163

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Northwest PG Solutions

USA . 2,032 parts In-Stock

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Native Components

USA . 622 parts In-Stock

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Corphita

USA . 63 parts In-Stock

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Overview

Elevate your designs with the BYT08P-300 from STMicroelectronics, a leader in high-quality semiconductor solutions. This fast recovery rectifier diode not only ensures reliable performance across extreme temperatures but also delivers outstanding efficiency for various applications, from power supplies to automotive systems. Trust in STMicroelectronics' expertise and experience, and harness the benefits of enhanced reliability and superior thermal management that propel your projects to success!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy offers excellent insulation properties and mechanical durability, making the diode reliable in various applications.

Config: SINGLE

A single configuration simplifies the design and integration of the diode into circuits, ensuring efficient and straightforward usage.

Maximum Reverse Recovery Time: 0.075 us

The fast reverse recovery time allows for quicker switching speeds, making this diode ideal for high-frequency applications.

Package Shape: RECTANGULAR

The rectangular package shape provides efficient space utilization on PCBs, facilitating compact circuit designs.

No. of Terminals: 2

With two terminals, this diode can efficiently connect within a circuit, promoting ease of installation and low complexity.

Package Style (Meter): FLANGE MOUNT

Flange mount style offers secure and stable mounting to heat sinks or circuit boards, improving thermal management.

Application: FAST RECOVERY

Designed for fast recovery, this diode is perfect for applications where quick response times are essential, such as switching power supplies.

Maximum Operating Temperature: 150 °C

A maximum operating temperature of 150 °C enables this diode to function reliably in high-temperature environments.

Minimum Operating Temperature: -40 °C

The ability to operate down to -40 °C ensures this diode can perform in extreme cold conditions, broadening its application range.

Terminal Finish: MATTE TIN

Matte tin finish improves solderability and corrosion resistance, enhancing the reliability of electrical connections.

Terminal Position: SINGLE

Single terminal position aids in straightforward integration into designs, ensuring alignment and reducing installation errors.

Case Connection: CATHODE

A cathode connection facilitates easy implementation in a standard rectifying configuration, simplifying circuit design.

Diode Type: RECTIFIER DIODE

As a rectifier diode, it efficiently converts AC signals to DC, making it essential for power rectification in circuits.

Maximum Forward Voltage (VF): 1.5 V

A forward voltage drop of 1.5 V minimizes power loss, contributing to overall system efficiency.

Maximum Output Current: 8 A

With a maximum output current of 8 A, this diode can handle significant loads, making it suitable for a variety of power applications.

Terminal Form: THROUGH-HOLE

Through-hole terminal form allows for secure soldering, contributing to mechanical stability and ease of repair.

Maximum Repetitive Peak Reverse Voltage: 300 V

A high peak reverse voltage of 300 V ensures robustness against voltage spikes, making it reliable for high-voltage applications.

Maximum Non-Repetitive Peak Forward Current: 100 A

The capacity to handle a peak forward current of 100 A provides ample leeway for transient events during operation.

Diode Element Material: SILICON

Silicon as the diode element material provides excellent electrical properties, ensuring efficient performance and reliability.

Technical Specifications

Diodes & Rectifiers BYT08P-300 attributes and parameters. Explore more Diodes & Rectifiers devices from STMicroelectronics

Specs

Additional Features:

FREE WHEELING DIODE

Application:

FAST RECOVERY

Case Connection:

CATHODE

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

1.5 V

JEDEC-95 Code:

TO-220AC

JESD-30 Code:

R-PSFM-T2

JESD-609 Code:

e3

Maximum Non Repetitive Peak Forward Current:

100 A

No. of Elements:

1

No. of Phases:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-40 Cel

Maximum Output Current:

8 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

FLANGE MOUNT

Qualification:

Not Qualified

Maximum Repetitive Peak Reverse Voltage:

300 V

Maximum Reverse Recovery Time:

.075 us

Sub-Category:

Rectifier Diodes

Surface Mount:

NO

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Position:

Trade Compliance

BYT08P-300 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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