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BYT03-300

STMicroelectronics

BYT03-300 by STMicroelectronics

BYT03-300 by STMicroelectronics is a fast recovery rectifier diode with a max reverse voltage of 300 V and forward current of 3 A. It operates efficiently in temperatures from -40 °C to 150°C, making it ideal for high-performance applications. Its compact round package ensures reliable performance in various electronic circuits.

Median Price

-

Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

Distributors (In-Stock)

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ECAB

Sweden . 19,070 parts In-Stock

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Anansix

USA . 1,168 parts In-Stock

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1,168

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Digiode

USA . 490 parts In-Stock

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490

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ComSIT Distribution GmbH

Germany . 400 parts In-Stock

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400

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Vyrian

USA . 185 parts In-Stock

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IDEA Electronic Components Group

UK . 1,799 parts In-Stock

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$0.129

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$0.116

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$0.116

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MKK Technologies

India . 220 parts In-Stock

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$0.242

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$0.242

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DigiPath Technology Company

USA . 220 parts In-Stock

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$0.242

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220

$0.242

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Northwest PG Solutions

USA . 2,152 parts In-Stock

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Corphita

USA . 1,917 parts In-Stock

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Native Components

USA . 586 parts In-Stock

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Parana Technologies

USA . 39 parts In-Stock

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$0.154

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Overview

Elevate your designs with the BYT03-300 from STMicroelectronics—a top-tier rectifier diode renowned for its fast recovery time and robust performance across diverse applications. Crafted from high-quality silicon, this reliable component ensures optimal efficiency, even in extreme conditions, withstanding temperatures from -40 °C to 150°C. Trust in STMicroelectronics' legacy of innovation to deliver unmatched value and reliability, empowering your projects with precision and longevity.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material ensures durability and resistance to environmental factors, making the diode reliable in various applications.

Config: SINGLE

A single configuration simplifies design and integration in circuits, making it easier to implement in various applications.

Maximum Reverse Recovery Time: 0.055 us

A fast reverse recovery time allows for higher switching speeds, which is crucial in applications that require quick response times.

Maximum Reverse Current: 20 uA

Low reverse current minimizes leakage losses, enhancing efficiency and performance in power management applications.

Package Shape: ROUND

The round package shape is optimal for space efficiency in circuit design, allowing for easy integration into compact layouts.

No. of Terminals: 2

Having two terminals simplifies the design and installation process, making it easier for manufacturers and engineers.

Package Style (Meter): LONG FORM

The long form package style is beneficial for ensuring better heat dissipation and can accommodate longer lead wires.

Application: FAST RECOVERY

Designed for fast recovery applications, this diode is ideal for high-frequency circuits, improving overall system performance.

Maximum Operating Temperature: 150 °C

High maximum operating temperature allows the diode to function reliably in demanding environments, ensuring durability.

Minimum Operating Temperature: -40 °C

The wide temperature range makes this diode suitable for outdoor and harsh environment applications.

Terminal Position: AXIAL

Axial terminal positioning allows for straightforward mounting on printed circuit boards (PCBs), simplifying the assembly process.

Case Connection: ISOLATED

Isolated case connection provides improved safety and reliability, reducing the risk of shorts and improving overall circuit integrity.

Maximum Power Dissipation: 4.2 W

A capability of handling up to 4.2 W of power dissipation prevents overheating, enhancing longevity and reliability.

Diode Type: RECTIFIER DIODE

As a rectifier diode, it effectively converts alternating current (AC) to direct current (DC), making it suitable for power supply applications.

Maximum Forward Voltage (VF): 1.5 V

A low forward voltage drop minimizes power losses during operation, contributing to overall energy efficiency.

Maximum Output Current: 3 A

With a maximum output current of 3 A, this diode can effectively handle significant loads, making it versatile for many applications.

Terminal Form: WIRE

Wire terminal form offers flexibility in connections and is adaptable to various mounting configurations.

Maximum Repetitive Peak Reverse Voltage: 300 V

A high peak reverse voltage rating enables the diode to be used in high-voltage applications, ensuring reliability under stress.

Maximum Non-Repetitive Peak Forward Current: 60 A

The ability to handle high non-repetitive peak forward current allows the diode to withstand pulse conditions safely.

Diode Element Material: SILICON

Silicon as the diode element material ensures good performance characteristics and thermal stability, making it a standard choice in the industry.

Technical Specifications

Diodes & Rectifiers BYT03-300 attributes and parameters. Explore more Diodes & Rectifiers devices from STMicroelectronics

Specs

Additional Features:

FREE WHEELING DIODE

Application:

FAST RECOVERY

Case Connection:

ISOLATED

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

1.5 V

JEDEC-95 Code:

DO-27

JESD-30 Code:

O-PALF-W2

Maximum Non Repetitive Peak Forward Current:

60 A

No. of Elements:

1

No. of Phases:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-40 Cel

Maximum Output Current:

3 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

LONG FORM

Maximum Power Dissipation:

4.2 W

Qualification:

Not Qualified

Maximum Repetitive Peak Reverse Voltage:

300 V

Maximum Reverse Current:

20 uA

Maximum Reverse Recovery Time:

.055 us

Sub-Category:

Rectifier Diodes

Surface Mount:

NO

Terminal Form:

Terminal Position:

Trade Compliance

BYT03-300 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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