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BAS69-06WFILM

STMicroelectronics

BAS69-06WFILM by STMicroelectronics

BAS69-06WFILM by STMicroelectronics is a Schottky rectifier diode with a max forward voltage of 0.26 V and supports up to 2 A peak forward current. It features a compact surface mount design with dual terminals, ideal for space-constrained applications. Operating at up to 150 °C, it’s perfect for efficient power management in electronics.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

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Digiode

USA . 4,068 parts In-Stock

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Vyrian

USA . 2,356 parts In-Stock

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Anansix

USA . 802 parts In-Stock

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IDEA Electronic Components Group

UK . 548 parts In-Stock

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$0.133

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$0.120

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548

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MKK Technologies

India . 1,686 parts In-Stock

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$0.251

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$0.251

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DigiPath Technology Company

USA . 1,686 parts In-Stock

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$0.251

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$0.251

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AZTECH Wire

Italy . 161 parts In-Stock

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$13.210

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Component Stockers USA

USA . 228 parts In-Stock

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$99.990

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Parana Technologies

USA . 2,335 parts In-Stock

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$0.160

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Corphita

USA . 928 parts In-Stock

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Native Components

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Northwest PG Solutions

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Perfect Parts

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Overview

Unlock the potential of your designs with the BAS69-06WFILM from STMicroelectronics. Renowned for their innovative and reliable solutions, STMicroelectronics delivers this high-performance Schottky rectifier diode, perfect for compact applications. With its dual-element configuration and impressive efficiency, it ensures minimal voltage drop and robust performance. Elevate your projects with a component that promises quality, durability, and the assurance of a trusted industry leader!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy material offers excellent insulating properties, making the diode durable and reliable in various environments.

Config: COMMON ANODE, 2 ELEMENTS

The common anode configuration allows for easier circuit design and integration with other components in applications.

Surface Mount: YES

Being surface mount compatible allows for modern PCB designs, making it ideal for compact devices and higher-density layouts.

Package Shape: RECTANGULAR

The rectangular shape optimizes space on PCB and ensures efficient thermal management.

No. of Terminals: 3

Having three terminals simplifies connections and enhances circuit design flexibility.

Package Style (Meter): SMALL OUTLINE

The small outline package is perfect for applications where space is limited, maintaining high performance without taking up too much real estate.

Maximum Operating Temperature: 150 °C

With a maximum operating temperature of 150 °C, this diode can perform reliably in high-temperature environments, improving overall device reliability.

Terminal Position: DUAL

The dual terminal position allows for easier routing on PCBs, contributing to better design flexibility.

Diode Type: RECTIFIER DIODE

As a rectifier diode, it effectively converts alternating current (AC) to direct current (DC), making it suitable for a wide range of power supply applications.

Maximum Forward Voltage (VF): 0.26 V

A low forward voltage drop of 0.26 V minimizes energy loss during conduction, enhancing efficiency in power applications.

Maximum Output Current: 0.01 A

This output current rating is adequate for low-power applications, ensuring the diode operates efficiently without overheating.

Technology: SCHOTTKY

Being a Schottky diode, it offers faster switching speeds and lower forward voltage drop, making it ideal for high-frequency applications.

Terminal Form: GULL WING

The gull wing terminal form ensures solid mechanical connections and facilitates easy soldering during manufacturing.

No. of Elements: 2

With two elements, this diode can handle varied tasks in circuits, making it versatile for different applications.

Maximum Repetitive Peak Reverse Voltage: 15 V

This voltage rating allows safe operation in circuits that require moderate reverse voltage handling, ideal for many consumer electronics.

Maximum Non-Repetitive Peak Forward Current: 2 A

The capability to handle high non-repetitive forward currents makes this diode resilient against transient spikes in power applications.

Diode Element Material: SILICON

Silicon material ensures good electrical performance and reliable operation in a variety of conditions, making it a standard choice in diode technology.

Technical Specifications

Diodes & Rectifiers BAS69-06WFILM attributes and parameters. Explore more Diodes & Rectifiers devices from STMicroelectronics

Specs

Config:

COMMON ANODE, 2 ELEMENTS

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

.26 V

JESD-30 Code:

R-PDSO-G3

Maximum Non Repetitive Peak Forward Current:

2 A

No. of Elements:

2

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Maximum Output Current:

.01 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

NOT SPECIFIED

Qualification:

Not Qualified

Maximum Repetitive Peak Reverse Voltage:

15 V

Sub-Category:

Rectifier Diodes

Surface Mount:

YES

Technology:

SCHOTTKY

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Trade Compliance

BAS69-06WFILM Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.70

SB

8541.10.00.70

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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