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BAS69-07P6FILM

STMicroelectronics

BAS69-07P6FILM by STMicroelectronics

BAS69-07P6FILM by STMicroelectronics is a Schottky rectifier diode with a max reverse current of 100 µA and operates b/w -65 °C to 150°C. It features a compact surface mount design with 6 terminals and supports up to 15 V reverse voltage. Ideal for efficient power management in electronic circuits.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 9,437 parts In-Stock

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9,437

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Digiode

USA . 1,415 parts In-Stock

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Anansix

USA . 427 parts In-Stock

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427

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Distributors (Availability)

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IDEA Electronic Components Group

UK . 1,875 parts In-Stock

1+ parts

$0.098

100+ parts

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$0.089

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1,875

$0.098

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$0.089

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MKK Technologies

India . 809 parts In-Stock

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$0.185

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809

$0.185

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DigiPath Technology Company

USA . 809 parts In-Stock

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$0.185

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809

$0.185

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AZTECH Wire

Italy . 1,217 parts In-Stock

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$9.150

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$9.150

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Perfect Parts

USA . 4,683 parts In-Stock

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4,683

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Parana Technologies

USA . 1,714 parts In-Stock

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$0.118

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$0.118

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Northwest PG Solutions

USA . 1,583 parts In-Stock

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Corphita

USA . 911 parts In-Stock

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Native Components

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Overview

Unlock superior performance with the BAS69-07P6FILM from STMicroelectronics, a trusted leader in innovative semiconductor solutions. This high-quality Schottky rectifier diode is designed for reliability and efficiency, making it ideal for diverse applications, from power management to signal processing. With a compact design and robust thermal performance, this diode not only enhances your project's durability but also streamlines your manufacturing process, delivering exceptional value and peace of mind. Choose STMicroelectronics for cutting-edge technology that drives success!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of durable plastic/epoxy ensures that the diode can withstand harsh environmental conditions, enhancing its longevity and reliability.

Config: SEPARATE, 2 ELEMENTS

The separate 2-element configuration allows for flexible integration into various circuit designs, making it versatile for different applications.

Surface Mount: YES

Being surface mount compatible enables easy integration into automated assembly processes, reducing manufacturing time and costs.

Maximum Reverse Current: 100 uA

A low maximum reverse current indicates minimal leakage, which is essential for improving circuit efficiency and performance.

Package Shape: RECTANGULAR

The rectangular shape facilitates efficient use of space on printed circuit boards (PCBs), promoting compact designs.

Reverse Test Voltage: 15 V

This reverse test voltage suggests the diode can handle significant reverse voltages, ensuring reliable operation in high-stress environments.

No. of Terminals: 6

Having six terminals allows for greater connectivity and flexibility in circuit designs, catering to diverse applications.

Package Style (Meter): SMALL OUTLINE

The small outline package style makes it ideal for space-constrained applications, offering a compact option for designers.

Maximum Operating Temperature: 150 °C

A high maximum operating temperature indicates that the diode can function effectively in demanding thermal environments, ensuring reliability and safety.

Minimum Operating Temperature: -65 °C

A low minimum operating temperature ensures functionality in extreme cold conditions, enhancing adaptability across various applications.

Terminal Position: DUAL

Dual terminal positioning provides ease of connection and layout flexibility, simplifying the design process.

Diode Type: RECTIFIER DIODE

As a rectifier diode, it is optimized for converting alternating current (AC) to direct current (DC), making it essential for power supply applications.

Maximum Forward Voltage (VF): 0.26 V

A low maximum forward voltage drop results in better efficiency during operation, reducing power loss in the circuit.

Maximum Output Current: 0.01 A

While the maximum output current is small, it ensures the diode is well-suited for low-power applications, where minimal energy consumption is crucial.

Technology: SCHOTTKY

Schottky technology enables fast switching speeds and low forward voltage drop, improving overall circuit performance.

Terminal Form: FLAT

Flat terminal form allows for better solderability and reliability in connections, leading to improved electrical performance.

No. of Elements: 2

The presence of two elements enhances the diode's efficiency and capability for handling various electrical loads.

Maximum Repetitive Peak Reverse Voltage: 15 V

This feature provides confidence that the diode can handle peak voltages without failure, making it reliable for use in circuits subject to voltage spikes.

Diode Element Material: SILICON

Silicon is a standard and reliable material for diodes, offering good performance, availability, and compatibility with existing technology.

Technical Specifications

Diodes & Rectifiers BAS69-07P6FILM attributes and parameters. Explore more Diodes & Rectifiers devices from STMicroelectronics

Specs

Config:

SEPARATE, 2 ELEMENTS

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

.26 V

JESD-30 Code:

R-PDSO-F6

No. of Elements:

2

No. of Terminals:

6

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-65 Cel

Maximum Output Current:

.01 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

NOT SPECIFIED

Qualification:

Not Qualified

Maximum Repetitive Peak Reverse Voltage:

15 V

Maximum Reverse Current:

100 uA

Reverse Test Voltage:

15 V

Sub-Category:

Other Diodes

Surface Mount:

YES

Technology:

SCHOTTKY

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Trade Compliance

BAS69-07P6FILM Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.70

SB

8541.10.00.70

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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