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BAS69KFILM

STMicroelectronics

BAS69KFILM by STMicroelectronics

BAS69KFILM by STMicroelectronics is a Schottky rectifier diode in a small outline package, ideal for compact applications. It features a max operating temp of 150 °C, VF of 0.26V, and supports up to 15V reverse voltage. Perfect for efficient power management in electronics.

Median Price

-

Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 4,795 parts In-Stock

1+ parts

-

100+ parts

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4,795

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Digiode

USA . 3,132 parts In-Stock

1+ parts

-

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-

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3,132

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EPE Components Inc.

USA . 585 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

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585

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-

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Bristol Electronics

USA . 585 parts In-Stock

1+ parts

-

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585

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Anansix

USA . 405 parts In-Stock

1+ parts

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405

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

IDEA Electronic Components Group

UK . 1,518 parts In-Stock

1+ parts

$0.167

100+ parts

-

1k+ parts

$0.151

10k+ parts

-

1,518

$0.167

-

$0.151

-

MKK Technologies

India . 2,180 parts In-Stock

1+ parts

$0.315

100+ parts

-

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10k+ parts

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2,180

$0.315

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-

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DigiPath Technology Company

USA . 2,180 parts In-Stock

1+ parts

$0.315

100+ parts

-

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10k+ parts

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2,180

$0.315

-

-

-

Native Components

USA . 36 parts In-Stock

1+ parts

$0.745

100+ parts

-

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36

$0.745

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Northwest PG Solutions

USA . 1,661 parts In-Stock

1+ parts

$0.819

100+ parts

-

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10k+ parts

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1,661

$0.819

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AZTECH Wire

Italy . 662 parts In-Stock

1+ parts

$12.530

100+ parts

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662

$12.530

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Component Stockers USA

USA . 300 parts In-Stock

1+ parts

$99.990

100+ parts

-

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300

$99.990

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Parana Technologies

USA . 2,331 parts In-Stock

1+ parts

-

100+ parts

$0.200

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2,331

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$0.200

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Corphita

USA . 857 parts In-Stock

1+ parts

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857

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Perfect Parts

USA . 234 parts In-Stock

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234

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Overview

Unlock unparalleled performance with the BAS69KFILM from STMicroelectronics, a leader in innovation and quality. This sleek, surface-mount Schottky rectifier diode enhances efficiency in a multitude of applications, from power management to signal processing. With its compact design and robust durability, it ensures reliable operation even under extreme conditions. Elevate your projects with this trusted component and experience the difference that precision engineering can make!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy as the package body material provides durability and protects the diode from environmental factors, ensuring reliable performance.

Config: SINGLE

A single configuration simplifies circuit design and integration, making it suitable for applications that require straightforward implementations.

Surface Mount: YES

The surface mount capability allows for compact designs and easier assembly on printed circuit boards, improving manufacturing efficiency.

Package Shape: RECTANGULAR

The rectangular shape optimizes space utilization on PCB layouts, making it easier to place multiple components in tight configurations.

No. of Terminals: 2

Two terminals make it simple to connect this diode in various configurations, enhancing versatility in different circuit applications.

Package Style (Meter): SMALL OUTLINE

The small outline package style saves space on the PCB, ideal for space-constrained applications or compact devices.

Maximum Operating Temperature: 150 °C

With a high maximum operating temperature, this diode can function reliably in demanding environments, reducing the risk of heat-induced failure.

Terminal Finish: MATTE TIN

The matte tin terminal finish provides good solderability and corrosion resistance, enhancing overall reliability in electronic assembly.

Terminal Position: DUAL

The dual terminal positioning supports flexible routing options on PCBs, allowing for easier layout and design adjustments.

Diode Type: RECTIFIER DIODE

As a rectifier diode, it is designed for efficient rectification in power supply applications, contributing to effective voltage regulation.

Maximum Forward Voltage (VF): 0.26 V

A low forward voltage drop reduces energy losses during operation, enhancing the efficiency of power conversion processes.

Maximum Output Current: 0.01 A

The ability to handle an output current of 10 mA makes it suitable for low-power applications, ensuring relevance in a variety of systems.

Technology: SCHOTTKY

Schottky technology allows for faster switching speeds and lower forward voltage drops, making this diode ideal for high-frequency applications.

Terminal Form: FLAT

Flat terminal form facilitates a stable connection on the PCB, enhancing solder joint reliability and long-term performance.

Maximum Repetitive Peak Reverse Voltage: 15 V

A maximum repetitive peak reverse voltage of 15 V ensures robust performance in applications requiring reverse voltage management without failure.

Maximum Non Repetitive Peak Forward Current: 2 A

The capacity to handle a peak forward current of 2 A allows for short-term high load situations, providing versatility in operational conditions.

Diode Element Material: SILICON

Silicon as the diode element material offers excellent electrical properties and durability, making it a dependable choice for electronic devices.

Technical Specifications

Diodes & Rectifiers BAS69KFILM attributes and parameters. Explore more Diodes & Rectifiers devices from STMicroelectronics

Specs

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

.26 V

JESD-30 Code:

R-PDSO-F2

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Forward Current:

2 A

No. of Elements:

1

No. of Phases:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Maximum Output Current:

.01 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Qualification:

Not Qualified

Maximum Repetitive Peak Reverse Voltage:

15 V

Sub-Category:

Rectifier Diodes

Surface Mount:

YES

Technology:

SCHOTTKY

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Position:

Trade Compliance

BAS69KFILM Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.70

SB

8541.10.00.70

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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