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74LVX86TTR

STMicroelectronics

74LVX86TTR by STMicroelectronics

74LVX86TTR by STMicroelectronics is a CMOS logic gate with a propagation delay of 14.5 ns and operates at supply voltages b/w 2-3.6 V. It features four functions, two inputs, and is ideal for high-speed applications in compact designs. Its military-grade specs ensure reliability in extreme temperatures from -55 °C to 125 °C.

Median Price

-

Lifecycle Status

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3

In-Stock Inventory

1k+

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Vyrian

USA . 5,568 parts In-Stock

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Anansix

USA . 2,657 parts In-Stock

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Digiode

USA . 281 parts In-Stock

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Microchip USA

USA . 121 parts In-Stock

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$0.368

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$0.368

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AZTECH Wire

Italy . 259 parts In-Stock

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$8.290

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IDEA Electronic Components Group

UK . 1,294 parts In-Stock

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$11.028

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$9.925

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Native Components

USA . 677 parts In-Stock

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$15.650

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Northwest PG Solutions

USA . 1,967 parts In-Stock

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$17.215

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$15.493

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MKK Technologies

India . 1,303 parts In-Stock

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$20.738

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DigiPath Technology Company

USA . 1,303 parts In-Stock

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$20.738

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QUARKTWIN TECHNOLOGY LTD

USA . 11,629 parts In-Stock

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Corphita

USA . 2,227 parts In-Stock

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Parana Technologies

USA . 1,295 parts In-Stock

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$13.186

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Overview

Unlock the power of precision with the 74LVX86TTR from STMicroelectronics, a leader in innovative technology. This dual-input logic gate delivers exceptional speed and reliability for diverse applications, from automotive to consumer electronics. Boasting a compact design and robust performance across challenging environments, it ensures your projects achieve maximum efficiency while minimizing power consumption. Elevate your designs with this trusted component—where quality meets value!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of durable plastic/epoxy ensures good structural integrity and protection against environmental factors.

Propagation Delay At Nominal Supply: 14.5 ns

A low propagation delay indicates fast switching speeds, making this product suitable for high-speed applications.

Surface Mount: YES

Surface mount technology allows for compact designs, making it easier to integrate into modern electronic circuits.

No. of Functions: 4

With multiple functions, this logic gate provides versatility and helps reduce component count in circuits.

No. of Inputs: 2

Having multiple inputs enables straightforward design in logic circuits, which simplifies application in various electronic systems.

Package Shape: RECTANGULAR

The rectangular shape facilitates efficient PCB layout and helps in optimizing space utilization.

Nominal Supply Voltage / Vsup (V): 2.7

The nominal supply voltage of 2.7V is ideal for low-power applications, positioning it well for battery-operated devices.

Load Capacitance (CL): 50 pF

A modest load capacitance supports a wider range of applications without excessive power consumption.

Power Supplies (V): 3.3

Operating on a common power supply voltage of 3.3V makes this logic gate compatible with various digital systems.

No. of Terminals: 14

Fourteen terminals provide robust connectivity options for various circuit configurations.

Package Style (Meter): SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

A thin profile and shrink pitch enable high-density PCB designs, crucial for space-constrained applications.

Maximum I (ol): 4 Amp

A high output current capacity of 4A allows for the driving of more complex loads directly from the logic gate.

Propagation Delay (tpd): 21 ns

While slightly higher than nominal, this propagation delay is still suitable for many applications requiring timely signal processing.

Maximum Operating Temperature: 125 °C

A high maximum operating temperature makes it ideal for uses in harsh environments and military applications.

Minimum Operating Temperature: -55 °C

Extremely low minimum operating temperature allows for reliable performance in cold conditions, perfect for military and aerospace applications.

Terminal Finish: NICKEL PALLADIUM GOLD

The premium terminal finish enhances durability and provides resistance against corrosion, ensuring dependable connections.

Terminal Position: DUAL

Dual terminal position enhances layout flexibility on PCBs, simplifying circuit design.

Maximum Seated Height: 1.2 mm

A low seated height promotes compact assemblies and allows for slimmer profile designs.

Width: 4.4 mm

This compact width enables efficient space utilization, particularly in dense PCB designs.

Minimum Supply Voltage (Vsup): 2 V

Supports a wide range of supply voltages, enhancing compatibility with different system requirements.

Length: 5 mm

The short length supports compact designs, making it well-suited for space-constrained applications.

Temperature Grade: MILITARY

Designed to meet military specifications, ensuring reliability and performance in demanding conditions.

Technology: CMOS

The use of CMOS technology provides low power consumption, high noise immunity, and efficient operation.

Terminal Form: GULL WING

Gull wing terminals offer easy soldering options and enhance connectivity reliability.

Packing Method: TR

Tape and reel packing allows for automated assembly processes, improving efficiency in production.

Terminal Pitch: 0.65 mm

A smaller terminal pitch enables more compact designs, accommodating denser arrangements on PCBs.

Maximum Supply Voltage (Vsup): 3.6 V

A maximum supply voltage of 3.6V offers flexibility for integrating with various logic levels in digital circuits.

Technical Specifications

Logic Gates 74LVX86TTR attributes and parameters. Explore more Logic Gates devices from STMicroelectronics

Specs

Family:

LV/LV-A/LVX/H

JESD-30 Code:

R-PDSO-G14

JESD-609 Code:

e4

Length:

5 mm

Load Capacitance (CL):

50 pF

Logic IC Type:

Maximum I (ol):

4 Amp

No. of Functions:

4

No. of Inputs:

2

No. of Terminals:

14

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

TSSOP14,.25

Package Shape:

Package Style (Meter):

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

Packing Method:

TR

Power Supplies (V):

3.3

Propagation Delay At Nominal Supply:

14.5 ns

Propagation Delay (tpd):

21 ns

Qualification:

Not Qualified

Schmitt Trigger:

NO

Maximum Seated Height:

1.2 mm

Sub-Category:

Gates

Maximum Supply Voltage (Vsup):

3.6 V

Minimum Supply Voltage (Vsup):

2 V

Nominal Supply Voltage / Vsup (V):

2.7

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

NICKEL PALLADIUM GOLD

Terminal Form:

Terminal Pitch:

.65 mm

Terminal Position:

DUAL

Width:

4.4 mm

Trade Compliance

74LVX86TTR Logic ICs trade compliance attributes, and parameters.

HTS

8542.39.00.01

SB

8542.39.00.00

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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