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74LVC00AMTR

STMicroelectronics

74LVC00AMTR by STMicroelectronics

74LVC00AMTR from STMicroelectronics is a CMOS logic gate with a propagation delay of just 4.3 ns and operates b/w 1.65V to 3.6V. It features four functions with dual inputs, ideal for compact electronic applications. Its military-grade design ensures reliability in extreme temperatures (-55 °C to 125°C).

Median Price

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Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 8,731 parts In-Stock

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Anansix

USA . 2,594 parts In-Stock

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Digiode

USA . 2,316 parts In-Stock

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AZTECH Wire

Italy . 554 parts In-Stock

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$9.600

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IDEA Electronic Components Group

UK . 136 parts In-Stock

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$13.272

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$11.945

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$11.945

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MKK Technologies

India . 1,662 parts In-Stock

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$24.957

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$24.957

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DigiPath Technology Company

USA . 1,662 parts In-Stock

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$24.957

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$24.957

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Microchip USA

USA . 464 parts In-Stock

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$31.642

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Ampacity Inc.

Singapore . 197 parts In-Stock

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$35.000

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QUARKTWIN TECHNOLOGY LTD

USA . 29,423 parts In-Stock

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Assy Fe

Spain . 2,500 parts In-Stock

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Corphita

USA . 1,357 parts In-Stock

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Northwest PG Solutions

USA . 744 parts In-Stock

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Parana Technologies

USA . 575 parts In-Stock

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Native Components

USA . 404 parts In-Stock

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Overview

Unlock unparalleled performance with the 74LVC00AMTR from STMicroelectronics. Renowned for its reliability and precision, this logic gate excels in a multitude of applications, from consumer electronics to automotive systems. Designed for efficiency, it boasts ultra-fast propagation delay, ensuring swift data processing. With ST's commitment to quality, you gain a durable, high-performance solution that enhances your designs and elevates your projects to new heights.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy body material provides a lightweight and durable construction, ensuring reliability in various applications.

Propagation Delay At Nominal Supply: 4.3 ns

With a low propagation delay, this logic gate ensures high-speed performance, making it ideal for fast-processing applications.

Surface Mount: YES

Surface mount capability allows for more compact designs and easier integration into modern electronic circuits.

No. of Functions: 4

Offering multiple functions within a single package enhances versatility and reduces the need for additional components.

No. of Inputs: 2

Having two inputs optimizes the design, catering to a wide range of logical operations without increasing complexity.

Package Shape: RECTANGULAR

The rectangular shape allows for efficient space utilization on PCBs, fitting seamlessly into various layouts.

Nominal Supply Voltage / Vsup (V): 2.7

A nominal supply voltage of 2.7V makes it suitable for low-power applications, contributing to energy efficiency.

Load Capacitance (CL): 50 pF

A load capacitance of 50 pF allows the gate to interface effectively with various loads, ensuring reliable signal integrity.

Power Supplies (V): 3.3

Compatible with a 3.3V power supply, this gate meets the common voltage requirements of many digital devices.

No. of Terminals: 14

14 terminals provide ample connection points for enhanced functionality and ease of integration into circuits.

Package Style (Meter): SMALL OUTLINE

The small outline package style supports compact designs, making it an optimal choice for space-constrained applications.

Maximum I (ol): 24 Amp

The ability to handle up to 24 Amps makes this logic gate suitable for high-current applications, providing robust performance.

Propagation Delay (tpd): 12 ns

A propagation delay of 12 ns ensures quick response times in critical digital applications, maintaining high throughput.

Maximum Operating Temperature: 125 °C

Operational stability at high temperatures up to 125 °C makes this product ideal for demanding environments.

Minimum Operating Temperature: -55 °C

The wide temperature range starting from -55 °C allows for reliable performance in extreme cold conditions.

Terminal Finish: NICKEL PALLADIUM GOLD

The nickel palladium gold finish provides excellent conductivity and resistance to corrosion, ensuring long-term reliability.

Terminal Position: DUAL

The dual terminal position simplifies layout designs and enhances the connection options for circuit integration.

Maximum Seated Height: 1.75 mm

Its low seated height promotes a thinner profile, making it suitable for ultra-low profile electronic devices.

Width: 3.9 mm

A width of 3.9 mm allows for integration into compact spaces, optimizing board real estate.

Minimum Supply Voltage (Vsup): 1.65 V

Supports a minimum supply voltage of 1.65V, which enhances its compatibility with low-power designs.

Length: 8.65 mm

A moderate length of 8.65 mm supports a balanced form factor for easy placement on PCBs.

Temperature Grade: MILITARY

The military-grade temperature classification ensures reliability under extreme environmental conditions, suitable for critical applications.

Technology: CMOS

Utilizing CMOS technology ensures low power consumption and high noise immunity, making it preferred in modern designs.

Terminal Form: GULL WING

The gull wing terminal form allows for efficient soldering and enhances the mechanical stability of the connections.

Packing Method: TR

Tape and reel (TR) packing method facilitates automated assembly processes, enhancing production efficiency.

Terminal Pitch: 1.27 mm

A terminal pitch of 1.27 mm provides a balanced spacing for robust solder joints, improving overall reliability.

Maximum Supply Voltage (Vsup): 3.6 V

A maximum supply voltage of 3.6V allows for compatibility with a range of applications without compromising performance.

Technical Specifications

Logic Gates 74LVC00AMTR attributes and parameters. Explore more Logic Gates devices from STMicroelectronics

Specs

Family:

LVC/LCX/Z

JESD-30 Code:

R-PDSO-G14

JESD-609 Code:

e4

Length:

8.65 mm

Load Capacitance (CL):

50 pF

Logic IC Type:

Maximum I (ol):

24 Amp

Moisture Sensitivity Level (MSL):

1

No. of Functions:

4

No. of Inputs:

2

No. of Terminals:

14

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Code:

SOP

Package Equivalence Code:

SOP14,.25

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Packing Method:

TR

Power Supplies (V):

3.3

Propagation Delay At Nominal Supply:

4.3 ns

Propagation Delay (tpd):

12 ns

Qualification:

Not Qualified

Schmitt Trigger:

NO

Maximum Seated Height:

1.75 mm

Sub-Category:

Gates

Maximum Supply Voltage (Vsup):

3.6 V

Minimum Supply Voltage (Vsup):

1.65 V

Nominal Supply Voltage / Vsup (V):

2.7

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

NICKEL PALLADIUM GOLD

Terminal Form:

Terminal Pitch:

1.27 mm

Terminal Position:

DUAL

Width:

3.9 mm

Trade Compliance

74LVC00AMTR Logic ICs trade compliance attributes, and parameters.

HTS

8542.39.00.01

SB

8542.39.00.00

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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