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BSM200GAL120DN2

Siemens

BSM200GAL120DN2 by Siemens

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Collector Current (IC): 290 A; No. of Terminals: 7; Maximum Operating Temperature: 150 Cel;

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Technical Specifications

Insulated Gate Bipolar Transistors (IGBT) BSM200GAL120DN2 attributes and parameters. Explore more Insulated Gate Bipolar Transistors (IGBT) devices from Siemens

Specs

Case Connection:

ISOLATED

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

1200 V

Maximum Fall Time (tf):

120 ns

Maximum Gate-Emitter Threshold Voltage:

6.5 V

Maximum Gate-Emitter Voltage:

20 V

JESD-30 Code:

R-XUFM-X7

No. of Elements:

1

No. of Terminals:

7

Maximum Operating Temperature:

150 Cel

Package Body Material:

UNSPECIFIED

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

Maximum Power Dissipation Ambient:

1400 W

Qualification:

Not Qualified

Maximum Rise Time (tr):

160 ns

Surface Mount:

NO

Terminal Form:

UNSPECIFIED

Terminal Position:

UPPER

Transistor Application:

GENERAL PURPOSE

Transistor Element Material:

SILICON

Maximum Turn Off Time (toff):

800 ns

Nominal Turn Off Time (toff):

550 ns

Maximum Turn On Time (ton):

220 ns

Nominal Turn On Time (ton):

110 ns

Maximum VCEsat:

3 V

Trade Compliance

BSM200GAL120DN2 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.29.00.95

SB

8541.29.00.80

Manufacturer Highlights

Siemens

Siemens is an industrial conglomerate, with businesses selling components and equipment for factory automation, railway equipment, electrical distribution equipment, and medical equipment. Through spinoffs it owns a controlling stake in separately listed Siemens Healthineers and minority take in Siemens Energy, also publicly listed. Healthineers supplies medical imaging equipment, while Siemens Energy supplies power generation, and wind turbines, respectively.

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