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SKM100GAL12T4

Semikron International

SKM100GAL12T4 by Semikron International

SKM100GAL12T4 by Semikron is an N-CHANNEL IGBT with VCEsat of 2.05V, IC of 160A, and toff of 475ns. Ideal for power control applications, it operates at a max temp of 175°C with VCE up to 1200V. Recognized under IEC-60747-1 & UL, this transistor has a ton of 212ns and comes in a flange mount package style.

Median Price

$38.350

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Overview

Discover the power and efficiency of the SKM100GAL12T4 from Semikron International, a leading manufacturer in the industry. As an Insulated Gate Bipolar Transistor (IGBT) with N-CHANNEL polarity and a built-in diode, this transistor is perfect for power control applications. With a maximum VCEsat of 2.05V and a maximum IC of 160A, this rectangular package style transistor offers high performance and reliability. Whether you're looking to optimize power systems or improve energy efficiency, the SKM100GAL12T4 provides unmatched quality and value for your projects.

Feature Benefit Bullets

Polarity or Channel Type: N-CHANNEL

N-CHANNEL IGBTs are known for their high efficiency and fast switching speeds, making them ideal for applications requiring power control.

Maximum VCEsat: 2.05 V

Low VCEsat value indicates minimal power loss during operation, leading to higher efficiency and reduced heat generation.

Nominal Turn Off Time: 475 ns

Fast turn-off time allows for precise control over power output, improving overall performance of the system.

Maximum Collector-Emitter Voltage: 1200 V

High VCE voltage rating enables the IGBT to handle high power applications without risk of breakdown or damage.

Maximum Collector Current (IC): 160 A

High IC rating allows the IGBT to handle large current flows, making it suitable for power control applications requiring high current capacities.

Technical Specifications

Insulated Gate Bipolar Transistors (IGBT) SKM100GAL12T4 attributes and parameters. Explore more Insulated Gate Bipolar Transistors (IGBT) devices from Semikron International

Specs

Case Connection:

ISOLATED

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

1200 V

Maximum Gate-Emitter Voltage:

20 V

JESD-30 Code:

R-XUFM-X5

No. of Elements:

1

No. of Terminals:

5

Maximum Operating Temperature:

175 Cel

Package Body Material:

UNSPECIFIED

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Peak Reflow Temperature (C):

NOT SPECIFIED

Polarity or Channel Type:

Reference Standard:

IEC-60747-1; UL RECOGNIZED

Sub-Category:

Insulated Gate BIP Transistors

Surface Mount:

NO

Terminal Form:

UNSPECIFIED

Terminal Position:

UPPER

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Transistor Application:

POWER CONTROL

Transistor Element Material:

SILICON

Nominal Turn Off Time (toff):

475 ns

Nominal Turn On Time (ton):

212 ns

Maximum VCEsat:

2.05 V

Trade Compliance

SKM100GAL12T4 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Semikron International

Semikron Danfoss is a family-owned business, merged by SEMIKRON and Danfoss Silicon Power in 2022. In a world that is going electric, Semikron Danfoss technologies are more relevant than ever. With our innovative solutions for automotive, industrial and renewable applications we help the world utilize energy more efficiently and sustainable and thus to significantly reduce overall CO2 emissions – one of the biggest challenges the world faces today. Our power electronics product offerings include semiconductor devices, power modules, stacks and systems. We take care of our employees and create value for our customers by investing significantly in innovation, technology, capacity, and service to deliver best-in-industry performance and for a sustainable future.

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