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SKIIP13AC12T4V1

Semikron International

SKIIP13AC12T4V1 by Semikron International

Semikron's SKIIP13AC12T4V1 is a N-CHANNEL IGBT with 6 elements, VCEsat of 2.1V, and max IC of 44A. Ideal for power electronics applications requiring high voltage (1200V) and current capabilities (175°C). UL recognized, it features built-in diode, thermistor, and flange mount package style for efficient performance in various industrial settings.

Median Price

$92.970

Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

< 1k

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

RS (Exports)

UK . 1 parts In-Stock

1+ parts

$33.600

100+ parts

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1

$33.600

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RS Americas

USA . 1 parts In-Stock

1+ parts

$152.340

100+ parts

-

1k+ parts

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10k+ parts

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1

$152.340

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Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Forefront Electronics and Design

USA . 2 parts In-Stock

1+ parts

$134.750

100+ parts

-

1k+ parts

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10k+ parts

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2

$134.750

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Fibra_Brandt Electronic GMBH

Germany . 12 parts In-Stock

1+ parts

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12

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Overview

Unlock the power of advanced technology with the SKIIP13AC12T4V1 by Semikron International. As a leading manufacturer in the industry, Semikron International delivers top-quality Insulated Gate Bipolar Transistors (IGBT) like no other. This N-CHANNEL bridge configuration with built-in diode and thermistor offers superior performance and reliability for a wide range of applications. From industrial machinery to renewable energy systems, this product provides unparalleled value, benefits, and advantages to customers looking for cutting-edge solutions. Elevate your projects with Semikron International's SKIIP13AC12T4V1 and experience innovation at its finest.

Feature Benefit Bullets

Polarity or Channel Type: N-CHANNEL

N-CHANNEL IGBTs are known for their high efficiency and fast switching speeds, making them ideal for high power applications.

Configuration: BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR

The built-in diode and thermistor help in protecting the circuit from voltage spikes and overheating, enhancing the overall reliability of the product.

Maximum VCEsat: 2.1 V

The low VCEsat value indicates lower power losses in the switching process, increasing the efficiency of the IGBT.

Package Shape: RECTANGULAR

Rectangular packages provide better thermal dissipation and easier mounting options, improving the overall performance of the IGBT.

Maximum Operating Temperature: 175 °C

With a high maximum operating temperature, this IGBT can withstand harsh environmental conditions and maintain stable performance.

Maximum Collector-Emitter Voltage: 1200 V

The high collector-emitter voltage rating makes this IGBT suitable for high voltage applications, ensuring safety and reliability.

Maximum Collector Current (IC): 44 A

The high collector current rating allows this IGBT to handle large currents, making it suitable for high power applications.

Technical Specifications

Insulated Gate Bipolar Transistors (IGBT) SKIIP13AC12T4V1 attributes and parameters. Explore more Insulated Gate Bipolar Transistors (IGBT) devices from Semikron International

Specs

Additional Features:

FREE WHEELING DIODE, HIGH RELIABILITY

Case Connection:

ISOLATED

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

1200 V

Maximum Gate-Emitter Voltage:

20 V

JESD-30 Code:

R-XUFM-X24

No. of Elements:

6

No. of Terminals:

24

Maximum Operating Temperature:

175 Cel

Package Body Material:

UNSPECIFIED

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Peak Reflow Temperature (C):

NOT SPECIFIED

Polarity or Channel Type:

Qualification:

Not Qualified

Reference Standard:

UL RECOGNIZED

Sub-Category:

Insulated Gate BIP Transistors

Surface Mount:

NO

Terminal Form:

UNSPECIFIED

Terminal Position:

UPPER

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Transistor Element Material:

SILICON

Maximum VCEsat:

2.1 V

Trade Compliance

SKIIP13AC12T4V1 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Semikron International

Semikron Danfoss is a family-owned business, merged by SEMIKRON and Danfoss Silicon Power in 2022. In a world that is going electric, Semikron Danfoss technologies are more relevant than ever. With our innovative solutions for automotive, industrial and renewable applications we help the world utilize energy more efficiently and sustainable and thus to significantly reduce overall CO2 emissions – one of the biggest challenges the world faces today. Our power electronics product offerings include semiconductor devices, power modules, stacks and systems. We take care of our employees and create value for our customers by investing significantly in innovation, technology, capacity, and service to deliver best-in-industry performance and for a sustainable future.

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