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BUZ312

Semiconductor Technology

BUZ312 by Semiconductor Technology

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 150 W; No. of Elements: 1; Terminal Position: SINGLE;

Median Price

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Lifecycle Status

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8

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Vyrian

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LIBRA Elektronik GmbH

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Digiode

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Nova Conductors

Japan . 59 parts In-Stock

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North Shore Components

USA . 24 parts In-Stock

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GES GmbH

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ACDS - Activité Composants Distribution Service

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Holdelec - ElecDif-Pro

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Modulus Dynamics

Lithuania . 19,903 parts In-Stock

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AZTECH Wire

Italy . 597 parts In-Stock

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Bastille Electronics

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Corphita

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Technical Specifications

Power Field Effect Transistors (FET) BUZ312 attributes and parameters. Explore more Power Field Effect Transistors (FET) devices from Semiconductor Technology

Specs

Minimum DS Breakdown Voltage:

1000 V

Maximum Drain Current (Abs) (ID):

6 A

Maximum Drain Current (ID):

6 A

Maximum Drain-Source On Resistance:

1.5 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

Maximum Feedback Capacitance (Crss):

170 pF

JEDEC-95 Code:

TO-218AA

JESD-30 Code:

R-PSFM-T3

No. of Elements:

1

No. of Terminals:

3

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Maximum Pulsed Drain Current (IDM):

24 A

Surface Mount:

NO

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Element Material:

SILICON

Maximum Turn Off Time (toff):

850 ns

Maximum Turn On Time (ton):

230 ns

Trade Compliance

BUZ312 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Semiconductor Technology

Since its initial founding in 1968, Semiconductor Technology, Inc. has assumed a leading role in high voltage N-Channel Mosfet and high voltage NPN/PNP Bipolar Transistor technology. We endeavor to offer our customers the most reliable mosfets and transistors in the industry. Transistors, being the building blocks of modern electronics, are found in just about any electrical product made to date. Our products serve a wide range of commercial, industrial, telecommunications, and military OEM's both in the domestic and international markets. Our quality assurance procedures and a zero-defects program have been in force for over 30 years. We can process our products to environmental and burn-in screening Class I, II, and III, which meet military environmental requirements; The product line encompasses the many NPN/PNP dual transistors (dual differential transistors) line. Approximately thirty-five percent of our high voltage N-Channel mosfets and high voltage NPN/PNP transistors are sole source items.

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