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STT3490N

Secos

STT3490N by Secos

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; No. of Terminals: 6; Transistor Element Material: SILICON; Package Shape: RECTANGULAR;

Median Price

-

Lifecycle Status

Suppliers In-Stock

0

In-Stock Inventory

< 1k

Technical Specifications

Power Field Effect Transistors (FET) STT3490N attributes and parameters. Explore more Power Field Effect Transistors (FET) devices from Secos

Specs

Minimum DS Breakdown Voltage:

150 V

Maximum Drain Current (ID):

1.2 A

Maximum Drain-Source On Resistance:

.7 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JESD-30 Code:

R-PDSO-G6

No. of Elements:

1

No. of Terminals:

6

Operating Mode:

ENHANCEMENT MODE

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Polarity or Channel Type:

Maximum Pulsed Drain Current (IDM):

10 A

Surface Mount:

YES

Terminal Form:

GULL WING

Terminal Position:

DUAL

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

STT3490N Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Secos

SeCoS Halbleitertechnologie GmbH in Germany is devoted to bring the best quality of wafer products to the market. In 2001, with over 50 years of experience in wafer production, SeCoS Halbleitertechnologie GmbH supplied techniques and assigned patents to SeCoS Taiwan, authorizing SeCoS Taiwan to produce and market semiconductors to the world. Here at SeCoS, our aim is to create mutually beneficial business partnerships as well as seek solid, long-term relationships with customers. With high standard customer service, our main objective is to provide our best quality at a very competitive price. It is our honour to introduce the brand and the quality of SeCoS Corporation to our customers. We believe our spirit in precision and passion for innovation will bring a revolutionary experience to the global market.

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