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MBRB2545CT-G

Sangdest Microelectronics (Nanjing)

MBRB2545CT-G by Sangdest Microelectronics (Nanjing)

MBRB2545CT-G by Sangdest Microelectronics is a Schottky rectifier diode with 15A max output current and 150A peak forward current. It has a common cathode configuration, gull wing terminal form, and is surface mountable. Ideal for applications requiring high power efficiency in compact electronic devices.

Median Price

$1.086

Lifecycle Status

Suppliers In-Stock

17

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Nova Conductors

Japan . 165 parts In-Stock

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Vyrian

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Digiode

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Connector Distribution Corp

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Right Parts Inc.

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ComSIT Distribution GmbH

Germany . 112 parts In-Stock

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Semi Source

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LIBRA Elektronik GmbH

Germany . 100 parts In-Stock

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Bristol Electronics

USA . 67 parts In-Stock

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A&K Electronics

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Rotakorn

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ACDS - Activité Composants Distribution Service

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LWI Electronics Inc

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Inventory MP

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Semicontronic

India . 193 parts In-Stock

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$0.010

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Ampacity Inc.

Singapore . 200 parts In-Stock

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Corohmni

South Africa . 313 parts In-Stock

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$1.043

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Aranea Global

USA . 2,000 parts In-Stock

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Argo Parts USA

USA . 4,230 parts In-Stock

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Continental Prestige Electronics

USA . 3,549 parts In-Stock

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AZTECH Wire

Italy . 597 parts In-Stock

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Perfect Parts

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A-Z Elektronik GmbH

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SupplyDigital Components

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Computer Components Inc. - USA

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Kulean Microsystems

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TANS Electronics

Latvia . 624 parts In-Stock

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UHIMA Technologies

Türkiye . 439 parts In-Stock

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iodParts Technologies Inc.

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GreenTree Electronics

Israel . 113 parts In-Stock

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Cyclops Electronics Ltd (Excess)

UK . 62 parts In-Stock

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Overview

Unleash the power of innovative technology with the MBRB2545CT-G by Sangdest Microelectronics (Nanjing). This high-quality diode rectifier offers unparalleled performance and reliability, making it a top choice for a wide range of applications. With its common cathode configuration and Schottky technology, this product delivers maximum output current of 15 A and non-repetitive peak forward current of 150 A. Trust Sangdest's expertise in diodes and rectifiers to provide you with the value and benefits you need for your projects. Elevate your electronics with the MBRB2545CT-G today!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protection for the diodes, ensuring a long lifespan for the product.

Config: COMMON CATHODE, 2 ELEMENTS

Common cathode configuration allows for easier circuit design and connection, while having 2 elements provides redundancy and improves reliability.

Surface Mount: YES

Surface mount capability makes installation easy and efficient, especially in compact electronic devices.

Package Shape: RECTANGULAR

Rectangular shape allows for space-efficient mounting and integration into various electronic systems.

Maximum Output Current: 15 A

With a high maximum output current, this product is capable of handling heavy loads and providing reliable performance in demanding applications.

Technology: SCHOTTKY

Schottky diodes offer lower forward voltage drop and faster switching compared to standard diodes, making them ideal for high-frequency and high-efficiency circuits.

Maximum Non Repetitive Peak Forward Current: 150 A

The high peak forward current rating ensures that the diodes can withstand short-term overloads without damage, adding to the product's robustness.

Technical Specifications

Diodes & Rectifiers MBRB2545CT-G attributes and parameters. Explore more Diodes & Rectifiers devices from Sangdest Microelectronics (Nanjing)

Specs

Additional Features:

FREE WHEELING DIODE, HIGH RELIABILITY

Application:

GENERAL PURPOSE

Case Connection:

CATHODE

Config:

COMMON CATHODE, 2 ELEMENTS

Diode Element Material:

SILICON

Diode Type:

JESD-30 Code:

R-PSSO-G2

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Forward Current:

150 A

No. of Elements:

2

No. of Phases:

1

No. of Terminals:

2

Maximum Output Current:

15 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Qualification:

Not Qualified

Surface Mount:

YES

Technology:

SCHOTTKY

Terminal Form:

Terminal Position:

Trade Compliance

MBRB2545CT-G Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

Manufacturer Highlights

Sangdest Microelectronics (Nanjing)

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 48,254 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, Analog, MEMS and Sensors Group

Marco Cassis

President, Automotive and Discrete Group

Marco Maria Monti

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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