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RTF025N03TL

ROHM

RTF025N03TL by ROHM

ROHM RTF025N03TL is a N-CHANNEL FET with 30V DS Breakdown Voltage, 2.5A Drain Current, and 0.098 ohm On Resistance. Ideal for SWITCHING applications in small outline packages with 3 terminals and built-in diode. Operating at up to 150°C, it's a versatile choice for high-power circuits requiring fast switching capabilities.

Median Price

$1.080

Lifecycle Status

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10

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1k+

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Chip1Stop

Japan . 8,453 parts In-Stock

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$1.080

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$1.080

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DigiKey

USA . 8,654 parts In-Stock

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$1.090

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$0.445

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$0.312

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$0.239

8,654

$1.090

$0.445

$0.312

$0.239

Mouser Electronics

USA . 7,608 parts In-Stock

1+ parts

$1.090

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$0.445

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$0.312

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$0.270

7,608

$1.090

$0.445

$0.312

$0.270

RS (Exports)

UK . 1,950 parts In-Stock

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$0.477

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$0.351

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$0.477

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Verical

USA . 283 parts In-Stock

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$1.068

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283

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$1.068

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Component Electronics Inc.

Canada . 3,000 parts In-Stock

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$0.770

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$0.580

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$0.500

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3,000

$0.770

$0.580

$0.500

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Chip Stock

USA . 282,500 parts In-Stock

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NAC Semi

USA . 12,000 parts In-Stock

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$0.207

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ACDS - Activité Composants Distribution Service

France . 4,672 parts In-Stock

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Nova Conductors

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Ampacity Inc.

Singapore . 4,230 parts In-Stock

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$0.195

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CoreStaff

Japan . 2,810 parts In-Stock

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$0.468

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$0.208

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$0.169

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$0.468

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Perfect Parts

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Kepictronics

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Authorized Procurement Solutions

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Continental Prestige Electronics

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GreenTree Electronics

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Infinite Electronics LLP (Excess)

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Argo Parts USA

USA . 501 parts In-Stock

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Aranea Global

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Overview

Enhance the performance of your electronic devices with the RTF025N03TL by ROHM. As a leading manufacturer in the industry, ROHM delivers top-quality small signal field effect transistors that are perfect for switching applications. With a maximum power dissipation of 0.8 W and a minimum DS breakdown voltage of 30 V, this N-channel transistor offers exceptional value and reliability. Whether you're looking to improve the efficiency of your circuits or enhance the functionality of your devices, the RTF025N03TL is the ideal choice for all your electronic needs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy material makes the package durable and ensures the safety of the transistor.

Polarity or Channel Type: N-CHANNEL

N-channel transistors typically have better performance characteristics, making this product a good choice for various applications.

Configuration: SINGLE WITH BUILT-IN DIODE

The built-in diode simplifies circuit design and eliminates the need for an external diode, saving space and cost.

Transistor Application: SWITCHING

Designed for switching applications, this transistor is efficient and capable of handling high-speed switching operations.

Surface Mount: YES

The surface mount capability allows for easy integration onto circuit boards and saves space in compact designs.

Minimum DS Breakdown Voltage: 30 V

With a minimum breakdown voltage of 30V, this transistor can withstand higher voltages, making it suitable for a variety of applications.

Package Shape: RECTANGULAR

The rectangular shape enables easy placement and secure mounting on circuit boards.

Operating Mode: ENHANCEMENT MODE

Enhancement mode operation provides better control and efficiency in certain circuit configurations.

Maximum Drain Current (Abs) (ID): 2.5 A

The high maximum drain current rating allows for handling larger currents without overheating the transistor.

No. of Terminals: 3

The 3-terminal design provides flexibility in circuit connections and configurations.

Maximum Power Dissipation (Abs): 0.8 W

With a maximum power dissipation of 0.8W, this transistor can handle moderate power levels effectively.

Package Style (Meter): SMALL OUTLINE

The small outline package style saves space and allows for compact circuit designs.

Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR

Metal-oxide semiconductor technology offers high performance and reliability, ensuring the transistor's longevity.

Maximum Operating Temperature: 150 °C

With a maximum operating temperature of 150°C, this transistor can withstand high-temperature environments, making it suitable for various applications.

Transistor Element Material: SILICON

Silicon-based transistors are known for their reliability and performance, making this product a durable choice.

Terminal Finish: TIN COPPER

The tin copper terminal finish ensures good electrical conductivity and corrosion resistance, prolonging the transistor's lifespan.

Maximum Drain-Source On Resistance: 0.098 ohm

The low drain-source on resistance minimizes power losses and improves efficiency in switching applications.

Terminal Position: DUAL

The dual terminal position provides flexibility in circuit layout and connections, making it easier to integrate into various designs.

Maximum Time At Peak Reflow Temperature (s): 10

This transistor can withstand peak reflow temperatures for up to 10 seconds, ensuring its reliability during manufacturing processes.

Peak Reflow Temperature °C: 260

With a peak reflow temperature of 260°C, this transistor can undergo high-temperature assembly processes without compromising its performance.

Technical Specifications

Small Signal Field Effect Transistors (FET) RTF025N03TL attributes and parameters. Explore more Small Signal Field Effect Transistors (FET) devices from ROHM

Specs

Minimum DS Breakdown Voltage:

30 V

Maximum Drain Current (Abs) (ID):

2.5 A

Maximum Drain Current (ID):

2.5 A

Maximum Drain-Source On Resistance:

.098 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JESD-30 Code:

R-PDSO-F3

JESD-609 Code:

e2

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

FET General Purpose Power

Surface Mount:

YES

Terminal Finish:

TIN COPPER

Terminal Form:

FLAT

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

10

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

RTF025N03TL Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

ROHM

Rohm Co Ltd is a Japan-based company that manufactures and distributes electronic components for use in automotive, transportation, medical, healthcare, audiovisual, telecommunications, digital power, computer and peripherals, and home appliance end markets. Its product portfolio includes integrated circuits in memory, amplifiers, switches, data converters, and microcontrollers; discrete semiconductors, such as transistors and diodes; power devices; passive devices, such as resistors and capacitors; and optoelectronic devices.

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