Loading...

RS1E350GNTB

ROHM

RS1E350GNTB by ROHM

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Transistor Application: SWITCHING; Minimum DS Breakdown Voltage: 30 V; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;

Median Price

$2.470

Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Chip1Stop

Japan . 90 parts In-Stock

1+ parts

$2.470

100+ parts

$1.330

1k+ parts

$1.110

10k+ parts

-

90

$2.470

$1.330

$1.110

-

DigiKey

USA . 2,500 parts In-Stock

1+ parts

$3.390

100+ parts

$1.537

1k+ parts

$1.323

10k+ parts

$1.081

2,500

$3.390

$1.537

$1.323

$1.081

Verical

USA . 90 parts In-Stock

1+ parts

-

100+ parts

$1.720

1k+ parts

-

10k+ parts

-

90

-

$1.720

-

-

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

ComSIT Distribution GmbH

Germany . 99 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

99

-

-

-

-

ACDS - Activité Composants Distribution Service

France . 60 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

60

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

CoreStaff

Japan . 33 parts In-Stock

1+ parts

$2.156

100+ parts

$0.856

1k+ parts

$0.809

10k+ parts

-

33

$2.156

$0.856

$0.809

-

Microchip USA

USA . 4,934 parts In-Stock

1+ parts

$7.970

100+ parts

-

1k+ parts

-

10k+ parts

-

4,934

$7.970

-

-

-

Authorized Procurement Solutions

USA . 3,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

3,000

-

-

-

-

Kepictronics

USA . 370 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

370

-

-

-

-

Technical Specifications

Power Field Effect Transistors (FET) RS1E350GNTB attributes and parameters. Explore more Power Field Effect Transistors (FET) devices from ROHM

Specs

Case Connection:

DRAIN

Minimum DS Breakdown Voltage:

30 V

Maximum Drain Current (ID):

35 A

Maximum Drain-Source On Resistance:

.002 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JESD-30 Code:

R-PDSO-F5

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

5

Operating Mode:

ENHANCEMENT MODE

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Maximum Pulsed Drain Current (IDM):

140 A

Surface Mount:

YES

Terminal Finish:

TIN

Terminal Form:

FLAT

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

10

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

RS1E350GNTB Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

ROHM

Rohm Co Ltd is a Japan-based company that manufactures and distributes electronic components for use in automotive, transportation, medical, healthcare, audiovisual, telecommunications, digital power, computer and peripherals, and home appliance end markets. Its product portfolio includes integrated circuits in memory, amplifiers, switches, data converters, and microcontrollers; discrete semiconductors, such as transistors and diodes; power devices; passive devices, such as resistors and capacitors; and optoelectronic devices.

previous next
The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Category top products 20

Authentic purchasing experiences

Partstack™ will investigate all reported instances of potential suspect/counterfeit part listings.