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RS1E280GNTB

ROHM

RS1E280GNTB by ROHM

ROHM's RS1E280GNTB is a N-CHANNEL FET with 30V DS Breakdown Voltage, ideal for SWITCHING applications. It features a single configuration with built-in diode, 28A max Drain Current, and 0.0033 ohm max Drain-Source On Resistance. This small outline package has 5 terminals and operates in ENHANCEMENT MODE.

Median Price

$0.998

Lifecycle Status

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6

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1k+

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DigiKey

USA . 294 parts In-Stock

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$0.990

100+ parts

$0.592

1k+ parts

$0.460

10k+ parts

$0.366

294

$0.990

$0.592

$0.460

$0.366

Adafruit Industries

USA . 21 parts In-Stock

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$1.007

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$0.916

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$0.826

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-

21

$1.007

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Mouser Electronics

USA . 2,168 parts In-Stock

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$1.530

100+ parts

$0.642

1k+ parts

$0.465

10k+ parts

$0.413

2,168

$1.530

$0.642

$0.465

$0.413

Verical

USA . 2,500 parts In-Stock

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$0.658

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$0.638

2,500

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Chip1Stop

Japan . 5 parts In-Stock

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ACDS - Activité Composants Distribution Service

France . 987 parts In-Stock

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987

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Advanced Electronics

New Zealand . 21 parts In-Stock

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$1.007

100+ parts

$0.916

1k+ parts

$0.826

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21

$1.007

$0.916

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CoreStaff

Japan . 2,500 parts In-Stock

1+ parts

$1.058

100+ parts

$0.450

1k+ parts

$0.403

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2,500

$1.058

$0.450

$0.403

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Kepictronics

USA . 795 parts In-Stock

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Authorized Procurement Solutions

USA . 200 parts In-Stock

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Overview

ROHM's RS1E280GNTB is a top-of-the-line Power Field Effect Transistor designed to deliver superior performance in switching applications. With its high-quality construction and N-CHANNEL polarity, this transistor offers reliability and efficiency that customers can trust. From its single configuration with built-in diode to its maximum drain current of 28A, this product provides exceptional value for a wide range of electronic projects. Whether you're working on automotive, industrial, or consumer electronics, the RS1E280GNTB by ROHM is the perfect choice for your next design.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protection for the transistor, ensuring a long lifespan and reliability in various operating conditions.

Polarity or Channel Type: N-CHANNEL

N-channel transistors generally have better performance characteristics and lower on-state resistance compared to P-channel transistors, making this product a suitable choice for high-performance applications.

Configuration: SINGLE WITH BUILT-IN DIODE

The built-in diode simplifies circuit design and provides reverse voltage protection, enhancing the overall efficiency and reliability of the system.

Transistor Application: SWITCHING

Designed specifically for switching applications, this transistor offers fast switching speeds and high efficiency, making it ideal for power management and control.

Maximum Pulsed Drain Current (IDM): 112 A

With a high maximum pulsed drain current, this transistor can handle large current spikes without compromising performance, ensuring reliable operation in demanding conditions.

Maximum Drain Current (ID): 28 A

The high maximum drain current capability allows this transistor to handle high continuous current levels, making it suitable for power applications that require a reliable and efficient operation.

Maximum Drain-Source On Resistance: 0.0033 ohm

The low on-resistance of this transistor results in reduced power losses and improved efficiency, making it a cost-effective solution for power management applications.

Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR

Metal-oxide semiconductor technology offers high switching speeds, low power consumption, and excellent thermal stability, making this transistor a reliable choice for demanding applications.

Technical Specifications

Power Field Effect Transistors (FET) RS1E280GNTB attributes and parameters. Explore more Power Field Effect Transistors (FET) devices from ROHM

Specs

Case Connection:

DRAIN

Minimum DS Breakdown Voltage:

30 V

Maximum Drain Current (ID):

28 A

Maximum Drain-Source On Resistance:

.0033 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JESD-30 Code:

R-PDSO-F5

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

5

Operating Mode:

ENHANCEMENT MODE

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Maximum Pulsed Drain Current (IDM):

112 A

Surface Mount:

YES

Terminal Finish:

TIN

Terminal Form:

FLAT

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

10

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

RS1E280GNTB Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

ROHM

Rohm Co Ltd is a Japan-based company that manufactures and distributes electronic components for use in automotive, transportation, medical, healthcare, audiovisual, telecommunications, digital power, computer and peripherals, and home appliance end markets. Its product portfolio includes integrated circuits in memory, amplifiers, switches, data converters, and microcontrollers; discrete semiconductors, such as transistors and diodes; power devices; passive devices, such as resistors and capacitors; and optoelectronic devices.

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