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RS1E240BNTB

ROHM

RS1E240BNTB by ROHM

ROHM's RS1E240BNTB is a N-CHANNEL FET with 30V DS breakdown voltage, 96A IDM, and 0.0046 ohm RDS(on). Ideal for switching applications, it features a built-in diode, operates in enhancement mode, and has a peak reflow temp of 260°C.

Median Price

$0.494

Lifecycle Status

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6

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1k+

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DigiKey

USA . 7,373 parts In-Stock

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$1.200

100+ parts

$0.494

1k+ parts

$0.347

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7,373

$1.200

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Mouser Electronics

USA . 6,939 parts In-Stock

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$1.200

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$0.495

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$0.347

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$0.273

6,939

$1.200

$0.495

$0.347

$0.273

Avnet

USA . 2,500 parts In-Stock

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$0.183

2,500

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$0.183

Chip1Stop

Japan . 2,420 parts In-Stock

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$0.368

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$0.315

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$0.267

2,420

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$0.368

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$0.267

Verical

USA . 1,781 parts In-Stock

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$0.494

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1,781

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ACDS - Activité Composants Distribution Service

France . 1,781 parts In-Stock

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1,781

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Distributors (Availability)

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Component Stockers USA

USA . 12,279 parts In-Stock

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$0.270

100+ parts

$0.270

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$0.270

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12,279

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$0.270

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CoreStaff

Japan . 1,781 parts In-Stock

1+ parts

$0.815

100+ parts

$0.361

1k+ parts

$0.313

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1,781

$0.815

$0.361

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Authorized Procurement Solutions

USA . 1,000 parts In-Stock

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Kepictronics

USA . 180 parts In-Stock

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Overview

Unlock the power of efficiency with the ROHM RS1E240BNTB Power Field Effect Transistor. Manufactured by ROHM, a trusted name in quality electronics, this N-CHANNEL transistor offers unparalleled performance in switching applications. With a maximum drain current of 24 A and a low on-resistance of only 0.0046 ohm, this transistor provides exceptional value and reliability. Whether you're designing industrial equipment or automotive systems, the RS1E240BNTB delivers the performance and durability you need to succeed. Choose ROHM for cutting-edge technology that empowers your projects.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/epoxy material provides good insulation properties and makes the transistor more durable and resistant to external elements.

Polarity or Channel Type: N-CHANNEL

N-channel FETs typically have higher mobility and conductivity, making them suitable for high-performance applications.

Configuration: SINGLE WITH BUILT-IN DIODE

Built-in diode allows for protection against reverse current flow, making it suitable for applications where back EMF protection is required.

Transistor Application: SWITCHING

Designed specifically for switching applications, ensuring efficient and fast switching of high currents.

Surface Mount: YES

Surface mount compatibility allows for easy and efficient PCB assembly, saving time and effort during production.

Minimum DS Breakdown Voltage: 30 V

High breakdown voltage ensures reliable operation and protection against voltage spikes.

Maximum Pulsed Drain Current (IDM): 96 A

High pulsed drain current capability makes this FET suitable for high-power applications where short bursts of current are required.

Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR

Metal-oxide semiconductor technology provides efficient switching and high overall performance of the transistor.

Maximum Drain-Source On Resistance: 0.0046 ohm

Low on-resistance reduces power losses and improves efficiency of the transistor.

Maximum Time At Peak Reflow Temperature (s): 10

Short reflow time ensures quick and effective soldering during assembly, reducing overall production time.

Technical Specifications

Power Field Effect Transistors (FET) RS1E240BNTB attributes and parameters. Explore more Power Field Effect Transistors (FET) devices from ROHM

Specs

Case Connection:

DRAIN

Minimum DS Breakdown Voltage:

30 V

Maximum Drain Current (ID):

24 A

Maximum Drain-Source On Resistance:

.0046 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JESD-30 Code:

R-PDSO-F5

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

5

Operating Mode:

ENHANCEMENT MODE

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Maximum Pulsed Drain Current (IDM):

96 A

Surface Mount:

YES

Terminal Finish:

TIN

Terminal Form:

FLAT

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

10

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

RS1E240BNTB Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

ROHM

Rohm Co Ltd is a Japan-based company that manufactures and distributes electronic components for use in automotive, transportation, medical, healthcare, audiovisual, telecommunications, digital power, computer and peripherals, and home appliance end markets. Its product portfolio includes integrated circuits in memory, amplifiers, switches, data converters, and microcontrollers; discrete semiconductors, such as transistors and diodes; power devices; passive devices, such as resistors and capacitors; and optoelectronic devices.

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