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RS1E200GNTB

ROHM

RS1E200GNTB by ROHM

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Moisture Sensitivity Level (MSL): 1; Transistor Element Material: SILICON; Package Style (Meter): SMALL OUTLINE;

Median Price

$1.320

Lifecycle Status

Suppliers In-Stock

7

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Adafruit Industries

USA . 900 parts In-Stock

1+ parts

$1.299

100+ parts

$1.182

1k+ parts

$1.065

10k+ parts

-

900

$1.299

$1.182

$1.065

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DigiKey

USA . 2,252 parts In-Stock

1+ parts

$1.320

100+ parts

$0.548

1k+ parts

$0.387

10k+ parts

-

2,252

$1.320

$0.548

$0.387

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Mouser Electronics

USA . 1,465 parts In-Stock

1+ parts

$1.320

100+ parts

$0.548

1k+ parts

$0.387

10k+ parts

$0.310

1,465

$1.320

$0.548

$0.387

$0.310

Chip1Stop

Japan . 17 parts In-Stock

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17

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Verical

USA . 8 parts In-Stock

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8

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Chip Stock

USA . 3,444 parts In-Stock

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3,444

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ACDS - Activité Composants Distribution Service

France . 58 parts In-Stock

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58

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Distributors (Availability)

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CoreStaff

Japan . 53 parts In-Stock

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$0.204

100+ parts

$0.191

1k+ parts

$0.190

10k+ parts

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53

$0.204

$0.191

$0.190

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Advanced Electronics

New Zealand . 900 parts In-Stock

1+ parts

$1.299

100+ parts

$1.182

1k+ parts

$1.065

10k+ parts

-

900

$1.299

$1.182

$1.065

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QUARKTWIN TECHNOLOGY LTD

USA . 17,491 parts In-Stock

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17,491

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Kepictronics

USA . 5,000 parts In-Stock

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5,000

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RC Electronics

USA . 4,500 parts In-Stock

1+ parts

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$0.450

1k+ parts

$0.430

10k+ parts

$0.420

4,500

-

$0.450

$0.430

$0.420

Technical Specifications

Power Field Effect Transistors (FET) RS1E200GNTB attributes and parameters. Explore more Power Field Effect Transistors (FET) devices from ROHM

Specs

Case Connection:

DRAIN

Minimum DS Breakdown Voltage:

30 V

Maximum Drain Current (ID):

20 A

Maximum Drain-Source On Resistance:

.0061 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JESD-30 Code:

R-PDSO-F5

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

5

Operating Mode:

ENHANCEMENT MODE

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Maximum Pulsed Drain Current (IDM):

80 A

Surface Mount:

YES

Terminal Finish:

TIN

Terminal Form:

FLAT

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

10

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

RS1E200GNTB Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

ROHM

Rohm Co Ltd is a Japan-based company that manufactures and distributes electronic components for use in automotive, transportation, medical, healthcare, audiovisual, telecommunications, digital power, computer and peripherals, and home appliance end markets. Its product portfolio includes integrated circuits in memory, amplifiers, switches, data converters, and microcontrollers; discrete semiconductors, such as transistors and diodes; power devices; passive devices, such as resistors and capacitors; and optoelectronic devices.

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