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RD3L050SNTL1

ROHM

RD3L050SNTL1 by ROHM

ROHM's RD3L050SNTL1 is a N-CHANNEL FET with 60V DS breakdown voltage and 15A IDM. Ideal for switching applications, it features 0.14 ohm RDS(on) and built-in diode in a small outline package.

Median Price

$1.560

Lifecycle Status

Suppliers In-Stock

10

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Farnell

UK . 2,920 parts In-Stock

1+ parts

$1.360

100+ parts

$0.550

1k+ parts

$0.385

10k+ parts

-

2,920

$1.360

$0.550

$0.385

-

Chip1Stop

Japan . 1,551 parts In-Stock

1+ parts

$1.760

100+ parts

-

1k+ parts

-

10k+ parts

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1,551

$1.760

-

-

-

DigiKey

USA . 7,188 parts In-Stock

1+ parts

$1.770

100+ parts

$0.755

1k+ parts

$0.545

10k+ parts

$0.444

7,188

$1.770

$0.755

$0.545

$0.444

Mouser Electronics

USA . 3,153 parts In-Stock

1+ parts

$1.880

100+ parts

$0.800

1k+ parts

$0.578

10k+ parts

$0.514

3,153

$1.880

$0.800

$0.578

$0.514

Newark

USA . 2,915 parts In-Stock

1+ parts

$1.940

100+ parts

$0.823

1k+ parts

$0.594

10k+ parts

-

2,915

$1.940

$0.823

$0.594

-

Verical

USA . 17,122 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$0.599

10k+ parts

$0.552

17,122

-

-

$0.599

$0.552

Element14

Singapore . 2,920 parts In-Stock

1+ parts

-

100+ parts

$1.020

1k+ parts

$0.709

10k+ parts

-

2,920

-

$1.020

$0.709

-

RS (Exports)

UK . 2,340 parts In-Stock

1+ parts

-

100+ parts

$0.460

1k+ parts

$0.390

10k+ parts

-

2,340

-

$0.460

$0.390

-

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

IBS Electronics

USA . 22,500 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$0.386

22,500

-

-

-

$0.386

ACDS - Activité Composants Distribution Service

France . 17,752 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

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17,752

-

-

-

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

CoreStaff

Japan . 1,072 parts In-Stock

1+ parts

$0.851

100+ parts

$0.389

1k+ parts

$0.350

10k+ parts

-

1,072

$0.851

$0.389

$0.350

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Microchip USA

USA . 2,599 parts In-Stock

1+ parts

$3.705

100+ parts

-

1k+ parts

-

10k+ parts

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2,599

$3.705

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-

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GreenTree Electronics

Israel . 7,771 parts In-Stock

1+ parts

-

100+ parts

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10k+ parts

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7,771

-

-

-

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Continental Prestige Electronics

USA . 3,267 parts In-Stock

1+ parts

-

100+ parts

$0.516

1k+ parts

$0.356

10k+ parts

$0.316

3,267

-

$0.516

$0.356

$0.316

Authorized Procurement Solutions

USA . 3,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

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3,000

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Overview

Unlock the power of innovation with the RD3L050SNTL1 by ROHM. Crafted with precision and expertise, this Power Field Effect Transistor (FET) offers unparalleled quality and reliability. Ideal for switching applications, this N-CHANNEL transistor boasts a built-in diode for seamless performance. With a minimum DS breakdown voltage of 60V and a maximum pulsed drain current of 15A, this transistor delivers exceptional efficiency. Experience the superior benefits and value that ROHM brings to the table with the RD3L050SNTL1 - your gateway to cutting-edge technology.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protective housing for the transistor, ensuring long lifespan and reliability.

Polarity or Channel Type: N-CHANNEL

Allows for efficient current conduction and lower power dissipation in the application.

Configuration: SINGLE WITH BUILT-IN DIODE

Simplify circuit design and improve efficiency by having a built-in diode for freewheeling currents.

Transistor Application: SWITCHING

Suitable for high-speed switching applications, providing fast and efficient operation.

Surface Mount: YES

Easy to install and suitable for automated assembly processes, saving time and labor costs.

Minimum DS Breakdown Voltage: 60 V

Ensures safe operation under high voltage conditions, increasing product reliability.

Package Shape: RECTANGULAR

Space-efficient design allows for compact integration into circuits and PCB layouts.

Terminal Form: GULL WING

Provides secure soldering connections and easy mounting on the PCB, enhancing stability.

Operating Mode: ENHANCEMENT MODE

Allows for precise control of current flow, improving overall performance and efficiency.

Maximum Pulsed Drain Current (IDM): 15 A

Capable of handling high current surges for short durations, making it suitable for peak power demands.

No. of Terminals: 2

Simplified connection setup with only two terminals, reducing complexity in circuit design.

Package Style (Meter): SMALL OUTLINE

Compact size is ideal for applications with limited space and allows for denser PCB layouts.

Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR

Offers high performance and reliability, making it a preferred choice for power FET applications.

Transistor Element Material: SILICON

Silicon material provides good thermal conductivity and high temperature resistance, ensuring stability under varying conditions.

Maximum Drain Current (ID): 5 A

Sufficient current-carrying capacity for various applications, meeting typical power requirements.

Maximum Drain-Source On Resistance: 0.14 ohm

Low on-resistance reduces power losses and improves efficiency in power switching applications.

Terminal Position: SINGLE

Simplified connection setup with a single terminal position, making installation and troubleshooting easier.

Case Connection: DRAIN

Direct connection to the drain terminal enables efficient current flow and heat dissipation in the circuit.

Technical Specifications

Power Field Effect Transistors (FET) RD3L050SNTL1 attributes and parameters. Explore more Power Field Effect Transistors (FET) devices from ROHM

Specs

Case Connection:

DRAIN

Minimum DS Breakdown Voltage:

60 V

Maximum Drain Current (ID):

5 A

Maximum Drain-Source On Resistance:

.14 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JEDEC-95 Code:

TO-252

JESD-30 Code:

R-PSSO-G2

No. of Elements:

1

No. of Terminals:

2

Operating Mode:

ENHANCEMENT MODE

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

NOT SPECIFIED

Polarity or Channel Type:

Maximum Pulsed Drain Current (IDM):

15 A

Surface Mount:

YES

Terminal Form:

GULL WING

Terminal Position:

SINGLE

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

RD3L050SNTL1 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

ROHM

Rohm Co Ltd is a Japan-based company that manufactures and distributes electronic components for use in automotive, transportation, medical, healthcare, audiovisual, telecommunications, digital power, computer and peripherals, and home appliance end markets. Its product portfolio includes integrated circuits in memory, amplifiers, switches, data converters, and microcontrollers; discrete semiconductors, such as transistors and diodes; power devices; passive devices, such as resistors and capacitors; and optoelectronic devices.

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