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R6009RND3TL1

ROHM

R6009RND3TL1 by ROHM

ROHM R6009RND3TL1 is a N-CHANNEL FET with 600V DS breakdown voltage and 27A IDM. Ideal for switching applications, it features a built-in diode, 0.665 ohm RDS(on), and 177mJ EAS rating. Suitable for enhancement mode operation in high-power systems with its 125W power dissipation capability.

Median Price

$1.177

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DigiKey

USA . 2,286 parts In-Stock

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$1.510

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$0.886

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$0.775

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$0.721

2,286

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$0.775

$0.721

Newark

USA . 139 parts In-Stock

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$1.560

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$0.940

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$0.828

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Chip1Stop

Japan . 54 parts In-Stock

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$1.800

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$0.653

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$0.541

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54

$1.800

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Mouser Electronics

USA . 5,000 parts In-Stock

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$0.745

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Farnell

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$0.900

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$0.744

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$0.740

184

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Element14

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$0.857

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$0.849

184

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Verical

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$1.070

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ACDS - Activité Composants Distribution Service

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CoreStaff

Japan . 100 parts In-Stock

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$4.176

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$0.647

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$0.596

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100

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Microchip USA

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Continental Prestige Electronics

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200

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Overview

Discover the power and efficiency of the R6009RND3TL1 by ROHM, a top-quality Power Field Effect Transistor that promises reliable performance in switching applications. Manufactured by industry leader ROHM, this N-CHANNEL FET boasts a maximum DS Breakdown Voltage of 600V and a maximum Drain Current of 9A, making it a versatile choice for various projects. With a sleek rectangular package shape and Gull Wing terminal form, this transistor is easy to install and offers enhanced thermal dissipation. Elevate your electronic designs with the R6009RND3TL1, delivering superior functionality and value to customers seeking high-performance components.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the internal components of the FET, ensuring reliable performance over time.

Polarity or Channel Type: N-CHANNEL

N-channel FETs typically have better performance characteristics compared to P-channel FETs, making this product suitable for a wide range of applications.

Configuration: SINGLE WITH BUILT-IN DIODE

The built-in diode allows for more efficient switching applications, reducing the need for additional components in the circuit.

Transistor Application: SWITCHING

Designed specifically for switching applications, this FET offers fast and reliable performance in various circuit designs.

Surface Mount: YES

Being surface mountable simplifies the installation process, especially for high-density PCB designs.

Minimum DS Breakdown Voltage: 600 V

With a high breakdown voltage, this FET can handle high voltage applications effectively without the risk of failure.

Package Shape: RECTANGULAR

The rectangular shape makes it easy to integrate this FET into standard PCB layouts with minimal space constraints.

Terminal Form: GULL WING

Gull wing terminals provide a strong mechanical connection, enhancing the reliability and durability of the FET during operation.

Operating Mode: ENHANCEMENT MODE

Enhancement mode FETs offer easy control over the switching behavior, allowing for precise and efficient operation in various circuit applications.

Maximum Pulsed Drain Current (IDM): 27 A

The high pulsed drain current rating ensures the FET can handle sudden spikes in current without damage, making it suitable for demanding applications.

Avalanche Energy Rating (EAS): 177 mJ

The high avalanche energy rating indicates the FET's ability to withstand voltage transients and surges, ensuring reliable performance under harsh conditions.

No. of Terminals: 2

Having 2 terminals simplifies the circuit layout and makes it easy to integrate the FET into various electronic designs.

Maximum Power Dissipation (Abs): 125 W

The high power dissipation capability allows the FET to handle large amounts of power without overheating, ensuring long-term reliability.

Package Style (Meter): SMALL OUTLINE

The small outline package style saves space on the PCB and allows for high-density mounting, making it ideal for compact electronic devices.

Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR

Metal-oxide semiconductor technology offers high performance and reliability, making this FET suitable for a wide range of applications.

Maximum Operating Temperature: 150 °C

The high maximum operating temperature ensures the FET can operate in demanding environments without performance degradation, increasing its versatility.

Transistor Element Material: SILICON

Silicon-based transistors offer excellent performance characteristics and high efficiency, making this FET a reliable choice for various circuit applications.

Maximum Drain Current (ID): 9 A

The high drain current rating allows the FET to handle substantial current loads without overheating or failure, ensuring reliable operation under various conditions.

Maximum Drain-Source On Resistance: 0.665 ohm

The low drain-source on resistance minimizes power losses and improves efficiency during operation, making this FET suitable for high-performance applications.

Terminal Position: SINGLE

Having a single terminal position simplifies the circuit design and installation process, making it easy to integrate the FET into different electronic systems.

Case Connection: DRAIN

The drain connection offers a reliable and efficient path for current flow, ensuring optimal performance in switching and power control applications.

Technical Specifications

Power Field Effect Transistors (FET) R6009RND3TL1 attributes and parameters. Explore more Power Field Effect Transistors (FET) devices from ROHM

Specs

Avalanche Energy Rating (EAS):

177 mJ

Case Connection:

DRAIN

Minimum DS Breakdown Voltage:

600 V

Maximum Drain Current (ID):

9 A

Maximum Drain-Source On Resistance:

.665 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JEDEC-95 Code:

TO-252

JESD-30 Code:

R-PSSO-G2

No. of Elements:

1

No. of Terminals:

2

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Maximum Pulsed Drain Current (IDM):

27 A

Surface Mount:

YES

Terminal Form:

GULL WING

Terminal Position:

SINGLE

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

R6009RND3TL1 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

ROHM

Rohm Co Ltd is a Japan-based company that manufactures and distributes electronic components for use in automotive, transportation, medical, healthcare, audiovisual, telecommunications, digital power, computer and peripherals, and home appliance end markets. Its product portfolio includes integrated circuits in memory, amplifiers, switches, data converters, and microcontrollers; discrete semiconductors, such as transistors and diodes; power devices; passive devices, such as resistors and capacitors; and optoelectronic devices.

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